• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.515-518
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• 2011

We investigated how temperature influences the structural and energetic dynamics of carbon nanotubes (CNTs) undergoing a high-speed impact with a Si (110) surface. By performing molecular dynamics simulations in the temperature range of 100 - 300 K, we found that a low temperature CNT ends up with a higher vibrational energy after collision than a high temperature CNT. The vibrational temperature of CNT increases by increasing the surface temperature. Overall, the structural and energy relaxation of low temperature CNTs are faster than those of high temperature CNTs.

• International Journal of Precision Engineering and Manufacturing
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• 제6권2호
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• pp.46-49
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• 2005

Recently, many research results have been reported about nano-tip using carbon nanotube because of its better sensing ability compared to a conventional silicon tip. However, it is very difficult to identify the carbon nanotube having proper length for nano-tip and to attach it on a conventional tip. In this paper, a new method is proposed to make a nano-tip and to control its length. The electrochemical etching method was used to control the length by cutting the carbon nanotube of arbitrary length and it was possible to monitor the process through current measurement. The etched volume of carbon nanotube was determined by the amount of applied charge. The carbon nanotube was successfully cut and could be used in the nanogripper.

• 전기전자학회논문지
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• 제22권2호
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• pp.420-426
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• 2018

가까운 미래에, 전자의 ballastic 혹은 near-ballastic 이동이 가능한 CNT(Carbon NanoTube)를 활용한 CNTFET(Carbon NanoTube Field Effect Transistor)은 현재의 실리콘 기반 트랜지스터를 교체할 유력한 후보 중 하나로 고려되고 있다. 고성능의 CNTFET으로 대규모 집적회로를 구현하기 위해서는 semiconducting CNT가 CNTFET 안에 동일한 간격과 높은 밀도로 정렬되어 배치되어야 하지만, CNTFET 공정의 미성숙으로, CNTFET 안의 CNT는 불규칙하게 배치하게 되고, 현존하는 HSPICE 라이브러리 파일은 불규칙한 CNT 배치에 의한 성능의 변화를 회로 레벨에서 평가할 수 있는 기능을 지원하지 않는다. 이러한 성능의 변화를 평가하기 위해서 선형 프로그래밍을 활용한 방법이 과거에 제안되었으나, CNTFET의 전류와 게이트 커패시턴스를 계산하는 과정에서 오차가 발생할 수 있는 문제점이 있다. 본 논문에서는 언급한 오차가 발생되는 이유에 대해서 자세히 논하고, 이 오차를 줄일 수 있는 새로운 방법을 제시하고자 한다. 시뮬레이션 검토 결과, 새롭게 제시된 방법이 기존 방법의 오차, 7.096%를 3.15%까지 줄일 수 있음을 보이고 있다.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1228-1231
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• 2005

This paper reports about the development of scanning probe microscopy (SPM) tip with multi-walled carbon nanotube (MWNT). For making a carbon nanotube (CNT) modified tips, AC electric field which causes the dielectrophoresis was used for alignment and deposition of CNTs to the metal coated SPM tip. By dropping the MWNT solution and applying an electric field between an SPM tip and an electrode, MWNTs which were dispersed into a diluted solution were directly assembled onto the apex of the SPM tips due to the attraction by the dielectrophoretic force. In this paper, we investigate experimental conditions about the alignment of the CNT to tip axis according to the change of the angle between a tip and an electrode. Experimental results are presented, and then fabricated CNT tips are showed and measurement results for 15nm gold particles are compared with that of the conventional silicon tip.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.233-238
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• 대한기계학회논문집A
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• 제31권1호
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• pp.139-144
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• 2007

This paper presents development of carbon nanotube (CNT) tip modified by focused ion beam (FIB) and experimental results in non-contact mode of atomic force microscopy (AFM) using fabricated tip. We used an electric field which causes dielectrophoresis, to align and deposit CNTs on a conventional silicon tip. The morphology of the fabricated CNT tip was then modified into a desired shape using focused ion beam. We measured anodic aluminum oxide sample and trench structure to estimate the performance of FIB-modified tip and compared with those of conventional Si tip. We demonstrate that FIB modified tip in non contact mode had superior characteristics than conventional tip in the respects of wear, image resolution and sidewall measurement.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.461-462
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• 2006

This paper reports on the development of a scanning probe microscopy(SPM) tip with caborn nanotubes. We used an electric field which causes dielectrophoresis(DEP), to align and deposit CNTs on a metal-coated SPM tip. Using the CNT attached SPM tip, we have obtained an enhanced resolution and wear property compared to that from the bare silicon tip through the scanning of the surface of the bio materials. The carbon nanotube tip align toward the source of the ion beam allowing their orientation to be changed at precise angles. By this technique, metal coated carbon nanotube tips that are several micrometer in length are prepared for scanning probe microscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.60-63
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• 2004

Recently, carbon nanotubes(CNTs) have been demonstrated to possess remarkable mechanical and electronic properties, in particular, for field emission applications. Its high aspect ratio and extremely small diameter, hollowness, together with high mechanical strength and high chemical stability, are advantages for use in field emitter. In this paper, we demonstrate electrical discharge properties from carbon nanotube cathode electrodes to use as an emitter electrode of vacuum gauges. Vertically aligned $2{\times}2mm^2$ CNT arrays on the silicon substrate were synthesized by the thermal CVD method on Fe catalytic metal, and a glass patterning by the sand blast method and the silicon/glass anodic bonding processes were applied to make samples with 2 electrodes. The field emission was examined under the vacuum range of $10^{-3}$ Torr.

• 한국세라믹학회지
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• 제49권4호
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• pp.333-336
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• 2012

The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.