• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.3
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• pp.5-13
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• 2023

In this study, a comparative study is conducted on the synthesis methods for silica nanoparticle employing the silicon sludge waste generated from the semiconductor manufacturing processes. Specifically, acid-washed silicon sludge wastes with no impurities are employed as the precursors of sol-gel and hydrothermal methods for silica nanoparticles preparation. The morphologies and properties of silica nanoparticles synthesized via two synthetic methods are examined by various analysis methods. As a result, silica nanoparticles from the sol-gel method are fabricated with high purity and uniform shape, while the hydrothermal method exhibits advantages in yield and ease of synthetic process. This comparative study offers detailed experimental results on the two synthetic methods for silica nanoparticle synthesis, which may contribute to the establishment of manufacturing high-value materials using the by-products generated in the semiconductor process.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.156-160
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• 2011

FePt nanoparticles suspension was synthesized by reduction of platinum acetylacetonate and decomposition of iron pentacarbonyl in the presence of oleic acid and oleyl amine. FePt nanoparticles were coated on a substrate by convective assembly from the suspension. To prevent the coalescence during the annealing of FePt nanoparticles double convective coatings were tried. First convective coating was for silica particle assembly on a silicon substrate and second one was for FePt nanoparticles on the previously coated silica layers. It was observed by scanning electron microscopy (SEM) that FePt nanoparticles were dispersed on the silica particle surface. After annealing at $700^{\circ}C$ for 30 minutes under nitrogen atmosphere, FePt nanoparticles on silica particles were maintained in a dispersed state with slight increase of particle size. On the contrary, FePt nanoparticles that were directly coated on silicon substrate showed severe particle growth after annealing due to the close-packing of nanoparticles during assembly. The size variation during annealing was also verified by X-ray diffractometer (XRD). It was suggested that pre-coating, which offered solvent flux oppose to the capillary force between FePt nanoparticles, was an effective method to prevent coalescence of nano-sized particles under high temperature annealing.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.747-750
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• 2007

The thermal conductivities of nano-sized fumed silica-based insulation media were investigated by varying a mean particle size of the silicon carbide opacifiers and ceramic fiber content. Opacifying effect of ceramic fiber and silicon carbide powders was discussed in terms of their content and the mean particle size of them. As the fiber contents increased from 10 wt% to 30 wt% in a material, its thermal conductivity at temperatures of about $620^{\circ}C$ decreased from 0.171 $Wm^{-1}K^{-1}$ to 0.121 $Wm^{-1}K^{-1}$. Meanwhile, the thermal conductivity at temperatures of about $625^{\circ}C$ decreased from 0.128 $Wm^{-1}K^{-1}$ to 0.092 $Wm^{-l}K^{-1}$ as the mean SiC particle size decreased from $31{\mu}m$ to $10{\mu}m$.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.156-157
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• 2000

낮은 도핑의 silicon은 광통신에서 사용하는 1.3 및 1.55 um의 광파장 영역에서 0.01dB/cm 이하의 낮은 흡수 손실을 가짐으로 인해, core 층으로 silicon을 사용하며 상부 및 하부 cladding 층으로 SiO$_2$와 같은 유전체 박막 구조를 갖는 SOI (Silicon on Insulator)를 사용한 수동광소자에 대한 연구가 1990년대부터 진행되고 있다. 또한 silicon의 특성상 SOI는strain에 의한 영향이 낮고, 광학적 비등방성이 적어서 polymer 및 silica를 이용한 광소자에 비해 편광의존도가 낮은 광소자를 구현할 수 있는 장점이 있다. 현재까지 연구되어온 SOI 수동광소자의 연구결과는 TE/TM 편광차에 따른 채널분리도가 약 0.04nm, 누화특성이 23dB 인 8채널 AWG의 연구결과가 있었으며, 스위칭시간 < 1msec, 소광비 17 dB의 광결합기와 마하젠더가 혼합된 광변조기 및 Bookham사에서 개발한 RX/TX 양방향 송수신 광모듈에 적용된 1.3/l.55 um 파장선택적 분리기, Silicon-CMOS 증폭기와 집적화된 4channel 광다중 수신기등에 대한 연구결과가 있었다. (중략)

• Resources Recycling
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• v.26 no.4
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• pp.19-25
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• 2017

The ways of producing metal silicon include a carbon reduction method, a plasma reduction method, and a thermite reaction method. The carbon reduction process produces metal silicon by metallurgical refining. The carbon reduction method is produced by adding a raw material mixed with quartz and coke to an electric arc furnace which is for carbon reduction. The cost of high energy costs and environmental protection facilities is an issue when producing metal silicon using electric arc furnaces. For this reason, there is no metal silicon production facility in Korea yet. Therefore, the optimal manufacturing conditions by the carbon reduction method are being studied through the experimental facilities by the companies and research institutes. The present study investigated the change of metal silicon purity according to the purity of silicon when extracting metal silicon using the thermit reaction, which has a relatively lower manufacturing cost than the carbon reduction method.

• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.631-635
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• 2011

Spherical and non-spherical silica particles prepared by the direct oxidation were studied for the effect of the particle size and shape of these particles on oxide CMP removal rate. Spherical silica particles, which have 10~100 nm in size, were prepared by the direct oxidation process from silicon in the presence of alkali catalyst. The 10 nm silica particles were aggregated by addition of an acid, an alcohol, or a silane as an aggregation inducer between the particles. Two or more aggregated silica particles were used as a seed to grow non spherical silica particles in the direct oxidation process of silicon in the presence of alkali catalyst. The oxide removal rate of spherical silica particles increased with increasing an average particle size for spherical silica abrasives in the oxide CMP. It further increased non-spherical particles, compared with the spherical particles in the similar average particle size.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.818-823
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• 2005

Sub-micron colloidal silica particles coated with nano-sized ceria were prepared by mixing of its silica and cerium salts hydrolysis, and modified by hydrothermal reaction. By using the slurries with and without hydrothermal modification containing above particles, oxide film coated on silicon wafer was polished. The modified slurries had higher polish rate due to increase of ceria fraction to silica through hydrothermal reaction. They revealed higher stability in wide range of pH $2\~10$ than ceria coated silica slurries without its modification.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.167-172
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• 2006

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.161-161
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• 2008

The oxide film of silicon wafer has been mainly polished by fumed silica, colloidal silica or ceria slurry. Because colloidal silica slurry is uniform and highly dispersed composed of spherical shape particles, by which the oxide film polished remains to be less scratched in finishing polishing process. Even though the uniformity and spherical shape is advantage for reducing the scratch, it may also be the factor to decrease the removal rate. We have studied the correlation of silica abrasive particles and CMP characteristics by varying pH, down force, and table rotation rate in polishing. It was found that the CMP polishing is dependent on the morphology, aggregation, and the surface property of the silica particles.