• 폴리머
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• 제36권6호
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• pp.727-732
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• 2012

양이온성 및 음이온성 계면활성제로 합성된 poly(butyl acrylate)(PBA), polystyrene(PS) 에멀젼을 다양한 농도로 혼합하여 높은 수율의 압력가소성 고분자 블렌드로 제조하였다. 이들 입자간의 heterocoagulation은 각 에멀젼의 농도에 크게 의존하였지만, 일정한 비율의 음이온과 양이온 사이에서만 진행되었고, 사용된 고분자의 양에 상관없이, 거의 균일한 조성의 블렌드가 얻어졌다. 비슷한 방법을 이용하여 음이온성 PBA와 양이온성 PS 나노입자에 음이온성 실리카 나노입자를 정전기적으로 첨가함으로써 정량적인 PBA/PS/Si 블렌드를 제조하였다. PBA/PS/Si 블렌드는 $25^{\circ}C$, 13.8MPa, 10분의 조건에서 압축성형으로 가공되었으며, 2 혹은 5 wt%의 실리카가 첨가된 시편의 경우, 반투명의 필름형상으로 성형되어 3.0 MPa의 인장강도와 25MPa의 탄성계수를 얻을 수 있었다.

• 접착 및 계면
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• 제4권1호
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• pp.9-17
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• 2003

오늘날 산업에서는 환경오염의 줄이고 에너지 절약에 기여할 수 있다는 이유에서 용매를 사용하지 않는 UV 하드코팅재료의 개발이 점차로 많은 주의를 끌고 있다. 본 연구는 실질적으로 산업에 이용될 수 있는 실리콘아크릴레이트(SAOC)를 포함하고 있는 UV 경화코팅제를 개발하고자 수행되었다. 실험의 결과, 수지조성물 중 SAOC의 형태나 농도가 UV 경화필름의 여러 가지 물성에 영향을 주었다. SAOC가 수지조성물에 도입되었을 때 경화된 필름의 물성은 SAOC가 함유되지 않은 도막과 비교하여 개선되었다. 특히, UV 하드 코팅의 내화학성, 내마모성, 내후성과 같은 성질들은 향상되었으며, 코팅된 폴리카보네이트 기재의 충격특성은 코팅되지 않은 PC에 비해 개선되었다. 30 wt% SAOC를 함유하고 있는 경화필름이 가장 좋은 물성을 나타내었다.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.55-59
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• 2013

Mold die sticking arises from silica filler abrasion to the cavity surface. Ni-P electroplating was examined to substitute conventional hard Cr plating. More than 4% of Phosphorus in the electroplated film produces nano crystal structure and annealing makes $Ni_3P$ precipitated to get hardness values equivalent to hard Cr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.45-49
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• 2000

An ozone condenser by a selective adsorption on the silica gel surface is constructed. Ozone density is evaluated by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the density evaluation from dilute to highly condensed ozone. The highest ozone density condensed by the adsorption method is evaluated to be 97 mol%.

• 한국막학회:학술대회논문집
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• 한국막학회 2008년도 춘계 총회 및 학술발표회
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• pp.264-267
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• 2008

• 대한화학회지
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• 제56권3호
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• pp.392-396
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• 2012

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1727-1729
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP precess, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.161-165
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• 2004

In order to get oxidizing power enough for growth of a superconductive thin film with oxide gas, concentrated ozone was used. As a method for concentrating ozone, a method for concentrating ozone by adsorbing ozone selectively into silica-gel beads is adopted, and this concentration is analyzed by the ultraviolet absorption method, the thermal decomposition method and the Q-mass analyzing method. Thermal decomposition method is most effective for measurement of a high concentration of ozone. Ozone as concentrated by the adsorption method got to have a concentration of 97 mol % at the maximum, and it was identified that the concentration of the ozone gas was stable for the time while a thin film was formed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.995-998
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• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• 한국안전학회지
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• 제12권4호
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• pp.79-85
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• 1997

In order to improve the surface characteristics of polymethylmethacrylate(PMMA), oxide thin film coatings were applied using the sol-gel dip-coating technique. The $Si(OC_2H_5)_4$, tetra-ethyl-ortho-silicate(TEOS) was used as a starting material for $SiO_2$ coating. The hardness of the alkoxy-derived oxide-coated PMMA was increased from 190 MPa for non-coated PMMA with increasing film thickness. By optimizing the heating conditions and the hydrolysis conditions, a maximum apparent hardness obtained In the present study was achieved 310 MPa using the withdrawal velocity of 5cm/min and heat treatment at $90^{\circ}C$ for 5 hours, which is about 1.6 times larger than that of uncoated PMMA.