• 제목/요약/키워드: Silica Slurry

검색결과 141건 처리시간 0.027초

사파이어 웨이퍼 CMP 공정 신뢰성 향상을 위한 혼합 나노실리카 콜로이달 슬러리 (Mixed Nano Silica Colloidal Slurry for Reliability Improvement of Sapphire Wafer CMP Process)

  • 정찬홍
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제14권1호
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    • pp.11-19
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    • 2014
  • A colloidal silica slurry has been manufactured by mixing nano silica powders having different grain size to improve the reliability of Sapphire wafer CMP process. The main reliability problem of CMP process such as the breaking of wafer can be prevented by reducing the size of particles in a slurry. While existing commercial colloidal silica slurries are usually made of single grain size silica powder of about 120nm, in the present study 40nm and 100nm silica powders are mixed to achieve a similar removal rate. The new colloidal silica slurry showed wafer removal rate of $3.04{\mu}m/120min$ while that of a commercial colloidal silica slurry was $3.03{\mu}m/120min$. The roughness was less than $4{\AA}$ and scratch was 0. It is also expected that the reduction of the size of nano silica particles can improve the dispersion stability and prolong the useful life of the slurry.

슬러리 Modification 에 대한 연구 (Methodological Study for Recycle of Chemical Mechanical Polishing Slurry)

  • 박성우;서용진;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.567-568
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    • 2006
  • To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

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구리 CMP 적용을 위한 산성 콜로이드 실리카를 포함한 준무연마제 슬러리 연구 (A Study on Semi Abrasive Free Slurry including Acid Colloidal Silica for Copper Chemical Mechanical Planarization)

  • 김남훈;김상용;서용진;김태형;장의구
    • 한국전기전자재료학회논문지
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    • 제17권3호
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    • pp.272-277
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    • 2004
  • The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing

  • Cho, Kyu-Chul;Jeon, Hyeong-Tag;Park, Jea-Gun
    • 한국재료학회지
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    • 제16권5호
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    • pp.308-311
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    • 2006
  • The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

실리카 슬러리의 에이징 효과 및 산화막 CMP 특성 (Aging Effects of Silica Slurry and Oxide CMP Characteristics)

  • 이우선;고필주;이영식;서용진;홍광준
    • 한국전기전자재료학회논문지
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    • 제17권2호
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    • pp.138-143
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    • 2004
  • CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

pH level 및 slurry 입도가 langasite wafer의 chemical mechanical planarization에 미치는 영향 (Effect of pH level and slurry particle size on the chemical mechanical planarization of langasite crystal wafer)

  • 조현
    • 한국결정성장학회지
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    • 제15권1호
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    • pp.34-38
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    • 2005
  • Langasite 단결정 wafer의 chemical mechanical planarization 공정에서 pH level 및 slurry 입도가 가공속도 및 평탄화도에 미치는 영향을 조사하였다. 낮은 pH level 조건하에서 더 높은 가공속도 값이 얻어진 반면에 평탄화도는 colloidal silica slurry의 평균입경에 의해 좌우됨을 확인하였다. 0.045 ㎛의 비정질 silica 입자를 함유한 슬러리를 사용하였을 때 표면에 잔류 scratch 형성이 없이 가장 좋은 가공성을 확보할 수 있었다. 가공속도와 평탄화도는 effective particle number에 대한 강한 의존성을 나타내었으며, effective particle number가 낮은 조건하에서 가공속도는 더 낮은 분포를 나타내었으나 평탄화도는 더 우수한 경향성을 확인하였다.

준 무연마제 슬러리를 아용한 Cu CMP 연구 (Study on Cu CMP by using Semi-Abrasive Free Slurry)

  • 김남훈;임종흔;엄준철;김상용;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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    • pp.158-161
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    • 2003
  • The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

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산화망간이 첨가된 혼합 연마제 실리카 슬러리의 산화막 CMP 특성 (Chemical Mechanical Polishing Characteristics of Mixed Abrasive Silica Slurry (MAS) by adding of Manganese oxide (MnO2) Abrasive)

  • 서용진
    • 전기전자학회논문지
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    • 제23권4호
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    • pp.1175-1181
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    • 2019
  • 논문에서는 1:10으로 희석된 실리카 슬러리에 산화망간(MnO2) 연마제를 첨가하여 재처리된 혼합연마제 슬러리(Mixed Abrasive Slurry; MAS)의 화학기계적연마(CMP) 특성을 연구하였다. 최적의 연마 성능을 갖는 슬러리를 설계하기 위해서는 높은 연마율, 하부층에 대한 적절한 연마선택비, 연마 후의 낮은 표면결함, 슬러리의 안정성 등을 얻어야 한다. 산화망간이 첨가된 MAS의 연마 성능은 연마율 및 비균일도와 같은 CMP 성능, 입도 분석, 표면 형상에 대해 평가하였다. 실험결과, 높은 연마율과 낮은 비균일도 측면에서 볼 때 원액 실리카 슬러리와 대등한 슬러리 특성을 얻을 수 있었다. 따라서 본 연구에서 제안하는 MnO2-MAS를 사용하면 고가의 소모재인 슬러리를 절약하는데 매우 유용할 것이다.

실리카 슬러리의 재활용 특성 (Recycling Characteristics of Silica Abrasive Slurry)

  • 박성우;김철복;이우선;장의구;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.723-726
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    • 2004
  • In this work, we have studied the CMP characteristics by mixing of original slurry and used slurry in order to investigated the possibility of recycle of used silica slurry. The removal rate and within-wafer non-uniformity (WIWNU) were measured as a function of different slurry composition. Also, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and the original slurry. Our experimental results revealed comparable removal rate and good planarity with commercial products.

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탈이온수로 희석된 실리카 슬러리에 알루미나 연마제가 첨가된 혼합 연마제 슬러리의 CMP 특성 (Chemical Mechanical Polishing Characteristics of Mixed Abrasive Slurry by Adding of Alumina Abrasive in Diluted Silica Slurry)

  • 서용진;박창준;최운식;김상용;박진성;이우선
    • 한국전기전자재료학회논문지
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    • 제16권6호
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    • pp.465-470
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    • 2003
  • The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.