• The Journal of the Acoustical Society of Korea
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• v.31 no.3
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• pp.115-128
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• 2012

This paper investigates the effects of diffuser on the acoustical parameters in music hall with consideration of the result of scattering coefficient measurement. A scale model hall of 600 seats with orchestra shell was used for experiments. The materials of 1:50 scale model was chosen through absorption coefficient measurement based on ISO 354. The model was matched to the computer simulation model in terms of reverberation time. In order to evaluate the effect of diffuser location, the measurements were accomplished with and without diffusers according to 7 configurations by diffuser-installed region; sidewall, balcony front, ceiling and so on. The following acoustical parameters were extracted from each measurement case; Reverberation time (RT), Early decay time (EDT), Clarity (C80), Center time (Ts), Sound strength (G) and Temporal diffusion (TD) from the auto-correlation function (ACF) of impulse responses. As a result, the absorption power and diffusion power were increased with number of diffusers. Accordingly RT, EDT and G were decreased by diffuser and the redirection of reflections was occurred briskly. Averaged TD was 6.05 to 6.30 by measurement cases. RT was found to be the most related factor to diffusion power (R = 0.94). The correlation between TD and EDT was high (R = 0.73). In addition, the effects of diffuser-installed location were discussed in terms of acoustical parameter variation.

• Tunnel and Underground Space
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• v.28 no.1
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• pp.59-71
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• 2018

Since the generalized Hoek-Brown (GHB) function predicts the strength of the jointed rock mass in a systematic manner by use of GSI index, it is widely used in rock engineering practices. In this study, a series of 2D elasto-plastic FE analysis, which adopts the GHB criterion as a yield function, was carried out to investigate the radial convergence characteristics of circular tunnel excavated in the GHB rock mass. The effect of the plastic potential function on the elasto-plastic displacement was also examined. In the analysis, the wide range of both the $K(={\sigma}_h/{\sigma}_v)$ and GSI values are considered. For each K value, the variation of the ratio of sidewall displacement to roof displacement was calculated with varying GSI values and the obtained displacement patterns were analysed. The calculation results show that the displacement ratio significantly depends not only on the K value but also on the range of GSI value. In particular, for lower range of GSI value, the displacement ratio pattern calculated in the elasto-plastic regime is opposite to that predicted by the elasticity theory. In addition, the variation of the radial displacement ratio with GSI value for different types of plastic potential function showed similar trend.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.49-54
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• 2022

The copper plating process used to fabricate the submicron damascene pattern of Cu wiring for Si wafer was applied to the plating of a PCB pattern of several tens of microns in size using the same organic additives and current density conditions. In this case, the non-uniformity of the plating thickness inside the pattern was observed. In order to quantitatively analyze the cause, a numerical calculation considering the solution flow and electric field was carried out. The calculation confirmed that the depletion of Cu²⁺ ions in the solution occurred relatively earlier at the bottom corner than the upper part of the pattern due to the plating of the sidewall and the bottom at the corner of the pattern bottom. The diffusion coefficient of Cu²⁺ ions is 2.65 10^-10 m²/s, which means that Cu²⁺ ions move at 16.3 ㎛ per second on average. In the cases of small damascene patterns, the velocity of Cu²⁺ ions is high enough to supply sufficient ions to the inside of the patterns, while sufficient time is required to replenish the exhausted copper ions in the case of a PCB pattern having a size of several tens of microns. Therefore, it is found that the thickness uniformity can be improved by reducing the current density to supply sufficient copper ions to the target area.

• Food Science and Preservation
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• v.15 no.1
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• pp.49-57
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• 2008

This study was conducted to develop an optimal composite recipe for a cookie including yam powder that would be attractive to all age groups. Wheat flour was partially substituted by yam powder to reduce the content of wheat flour. This study has produced the sensory optimal composite recipe by making cookies, respectively with each 5 level of yam powder $(X_1)$, Sugar$(X_2)$, butter$(X_3)$, by C.C.D (Central Composite Design) and conducting sensory evaluation and instrumental analysis by means of RSM (Response Surface Methodology). Sensory items showed very significant values in color, softness, overall quality (p<0.01), flavor (p<0.05) and those of instrumental analysis showed significant values in lightness, redness (p<0.05), spread ratio, hardness (p<0.01). Also sensory optimal ratio of yam cookie was calculated at yam powder 37.35 g, sugar 50.75 g, butter 78.40 g and it was revealed that the factors of influencing yam cookie aptitude were in older of yam powder, butter, sugar.