• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.95-95
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• 2009

Single-crystalline Bi nanowires have motivated many researchers to investigate novel quasi-one-dimensional phenomena such as the wire-boundary scattering effect and quantum confinement effects due to their electron effective mass (~0.001 me). Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at $270^{\circ}C$. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. However, the method is known to produce relatively lower density of nanowires than that of other nanowire growth methods for device applications. In order to increase density of nanowire, we propose a method for enhancing compressive stress which is a driving force for nanowire growth. In this work, we report that the compressive stress can be controlled by modifying a substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a Si substrate. It was found that the nanowire density of a Bi film grown on $100{\mu}m{\times}100{\mu}m$ pattern Si substrate increased over seven times higher than that of a Bi sample grown on a normal substrate. Our results show that density of nanowire can be enhanced by sidewall effect in optimized proper pattern sizes for the Bi nanowire growth.

• 공업화학
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• 제20권1호
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• pp.99-103
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• 2009

반도체 소자의 실리콘 게이트 전극 식각공정은 산화막에 대한 높은 식각 선택비와 정확한 식각형상 제어 등의 공정요구 조건을 충족시키기 위해 고밀도 플라즈마 식각공정을 사용하나 식각 후 notching이 발생되는 문제점을 보이고 있다. 특이하게 도핑 되지 않은 비정질 실리콘을 게이트 전극 물질로 사용한 경우 발생된 notching의 위치가 가장 외곽에 위치한 게이트 전극선의 바깥쪽에서 주로 발생되는 것이 관찰 되었다. 본 연구에서는 $Cl_2/HBr/O_2$의 식각기체 구성으로 notching 발생이 식각변수들에 따라 받는 경향성을 파악하고, 식각장치 내에서 실리콘 기판에 도달하는 식각 이온들의 진행경로를 분석하였다. 주 원인은 플라즈마 내의 식각 활성종 이온들이 대전효과에 의하여 궤적의 왜곡이 일어나 notching 현상이 발생되는 것으로 파악되었다. 이 결과를 바탕으로 도핑 되지 않은 비정질 실리콘 게이트 식각에서 발생하는 notching의 형성기구를 정성적으로 설명하였다.

• 센서학회지
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• 제24권1호
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.69-74
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• 2004

In scramjet engines with sidewall compression inlet, it is well known that a non-uniform flow appears since a separated region is generated near the flow centerline on the body side. The separated region is caused by shock-boundary layer interaction and likely to cause un-start phenomena since the flow in the separated region is subsonic and acts as a communication path between the isolator and the combustor. In the present study, the non-uniform flow characteristics in the scramjet inlet-isolator region are numerically studied in detail. Effect of flow suction from body sidewall surface on the non-uniform flow field numerically examined to clarify the flow mechanism to suppress the un-start transition.

• 대한전기학회논문지
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• 제45권2호
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• pp.230-234
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• 1996

A new trenched Hybrid Schottky INjection Field Effect Transistor (HSINFET) is proposed and verified by 2-D semiconductor device simulation. The feature of the proposed structure is that the hybrid Schottky injector is implemented at the trench sidewall and p-n junction injector at the upper sidewall and bottom of a trench. Two-dimensional simulation has been performed to compare the new HSINFET with the SINFET, conventional HSINFET and lateral insulated gate bipolar transistor(LIGBT). The numerical results shows that the current handling capability of the proposed HSINFET is significantly increased without sacrificing turn-off characteristics. The proposed HSINFET exhibits higher latch-up current density and much faster switching speed than the lateral IGBT. The forward voltage drop of the proposed HSINFET is 0.4 V lower than that of the conventional HSINFET and the turn-off time of the trenched HSINFET is much smaller than that of LIGBT.

• 대한전자공학회논문지SD
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• 제37권2호
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• pp.46-54
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• 2000

기존 건물의 실내에서 가입자 단말기까지 광케이블을 포설하기가 어렵기 때문에 실내의 주 출입구까지만 광케이블을 포설 종단하고 가입자 단말까지는 광무선 전송방식을 도입할 수 있다. 본 논문에서 광무선 송신기가 벽면에 위치할 경우 세 번 반사하는 경우까지 포함하는 임펄스응답을 구하고 이 계산된 임펄스응답을 사용하여 광전력 페널티를 구하였다. 벽면에 송신기가 위치하여도 한번 반사되어 수신되는 광전력이 크므로 실내 적용이 가능함을 알 수 있었다. 또한 2 Mb/s의 전송속도에서 광전력 페널티는 무시할 수 있을 정도로 적었다.

• Journal of Welding and Joining
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• 제21권3호
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• pp.85-91
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• 2003

Narrow gap welding has many advantages over conventional V-grooved butt welding such as high productivity, small deformation and improved mechanical property of joints. With narrower groove gap, less arc heat input is expected will all the other advantages of narrow gap welding. The main defects of narrow gap welding include the lack of root fusion, convex bead surface and irregular surface, all of which have negative effects on the next welding pass. This paper suggests an up-and-down torch oscillation for ultra narrow gap welding with gap size of 5mm and investigates the proper welding conditions to fulfill the reliable and high welding quality. First, GMA welding model was suggested for ultra narrow gap welding system with Halmoy's model referenced for wire melting modeling. And the arc length in ultra narrow gap was defined. Secondly, based on the experimental results of up-and-down torch oscillation welding, phase shift of current and wire extension length were simulated for varying oscillation frequency to show that weld the bead shape in ultra narrow gap welding can be predicted. As the result, it was confirmed that reliable weld quality in ultra narrow gap welding can be achieved with up-and-down torch oscillation above 15Hz due to its ability to provide uniform heat input along the sidewall of gap.

• 대한기계학회논문집B
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• 제40권4호
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• pp.245-253
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• 2016

타이어의 반복적 변형과 노면과의 마찰은 열발생을 야기하여 타이어의 온도를 상승시킨다. 이 온도 증가는 타이어 손상을 가져오는 요인이 될 수 있다. 이 같은 온도 상승을 억제하고자 타이어 측면에 냉각핀을 적용하고, 이에 따른 냉각 효과를 규명하는 것이 본 연구의 목적이다. 이를 위하여 8개의 냉각핀 형상이 검토 되었으며, 냉각핀 형상에 따른 사이드월 표면 온도 저감 효과를 수치해석적 분석을 통해 규명하였다. 또한 핀 후류에서의 와류에 의한 유동특성과 열전달특성을 비교하였다.

• 설비공학논문집
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• 제14권11호
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• pp.972-980
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• 2002

This work is aimed at estimating the effects of various factors on the energy consumption of Korean-style apartment houses using TRNSYS. The factors considered here include the nominal size of floor area, type of remodeling, azimuth, sidewall insulation, and window type. Based on some assumptions, an actual apartment house is simplified into a model that is used for thermal load calculations. The simplified model is validated by showing a good agreement with the actual one in the predicted result. Remodeling balconies into unconditioned buffer spaces yields a favorable thermal performance in comparison with the original type regardless of the nominal size. Incorporating balconies into a conditioned indoor space leads to sharp increases in thermal loads, which must be avoided in view of energy conservation as well as structural problem. A quantitative assessment on the azimuthal effect indicates that the heating energy can be saved up to 16％ by taking the south or southeast direction. Reduction in the heating load with enhancing the sidewall insulation is gradual, so that a cost-effectiveness analysis may be needed when amending the regulations concerned. Glazing appears to significantly affect the heat transfer through window. A typical case illustrates that the heating load is decreased about 25％ by simply adopting triple glazing instead of double glazing.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.314-318
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• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.