• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.196-197
• /
• 2010

NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$와 $450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1155-1159
• /
• 1999

Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

• Journal of the Korean Ceramic Society
• /
• v.33 no.12
• /
• pp.1414-1420
• /
• 1996

Using Si powder with average particle size of 8${\mu}{\textrm}{m}$ Si compacts were formed by pressureless powder packing method. The compacts were reaction bonded at 1350, 140$0^{\circ}C$ for 3~35 hrs under N2/H2 atmosphere and its microstructures were examined. Reaction bonded silicon nitrides showed nitridation of 90% and relative density of 88% After the impregnation of 5wt% MgO as sintering additive using aqueous solution of Mg nitrate the Si compacts were reaction bonded at 140$0^{\circ}C$ for 15hrs. The reaction bonded bodies were gas pressure sintered at 180$0^{\circ}C$ 190$0^{\circ}C$ 200$0^{\circ}C$ for 150, 300min. They showed relative density of 95% bending strength of 600MPa and fracture toughness of 6 MPa.m1/2.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.3
• /
• pp.89-92
• /
• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.190-190
• /
• 2003

여러원소 (Sb, F 등)를 도핑한 SnO$_2$ 투명전도막은 여러 가지 훌륭한 특성으로 Solar cell, heat mirrors, gas sensors, liquid crystal displays, thick film resistor 등과 같이 넓은 범위에서 응용되고 있다. 본 연구에서는 Sb 도핑된 Tin Oxide films이 Sol-gel dip coating법에 의해 준비되었다. SnO$_2$:Sb 용액은 SnC1$_2$ 와 SbC1$_3$ Power를 알코올에 용해하여 Ethylene glycol 와 Citric acid를 첨가하여 합성하였다. 막의 상형성은 XRD와 SEM(Scanning electron microscope)에 의해서 분석되었으며, 특성분석은 투과율(UV/VIS Spectrophotometer)과 표면전기저항(four point probe)으로 분석되었다. SiO$_2$ barrier이 SnO$_2$:Sb 막의 특성에 미치는 영향을 확인하기 위하여 XPS(X-ray photoelectron spectroscopy) 분석이 적용되었다.

• Journal of the Korean Vacuum Society
• /
• v.8 no.3A
• /
• pp.218-223
• /
• 1999

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

• ETRI Journal
• /
• v.19 no.1
• /
• pp.26-35
• /
• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• Journal of Sensor Science and Technology
• /
• v.9 no.5
• /
• pp.389-395
• /
• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Journal of Powder Materials
• /
• v.27 no.2
• /
• pp.119-125
• /
• 2020

One of the promising candidates for accident-tolerant fuel (ATF), a ceramic microcell fuel, which can be distinguished by an unusual cell-like microstructure (UO₂ grain cell surrounded by a doped oxide cell wall), is being developed. This study deals with the microstructural observation of the constituent phases and the wetting behaviors of the cell wall materials in three kinds of ceramic microcell UO₂ pellets: Si-Ti-O (STO), Si-Cr-O (SCO), and Al-Si-Ti-O (ASTO). The chemical and physical states of the cell wall materials are estimated by HSC Chemistry and confirmed by experiment to be mixtures of Si-O and Ti-O for the STO; Si-O and Cr-O for SCO; and Si-O, Ti-O, and Al-Si-O for the ASTO. From their morphology at triple junctions, UO₂ grains appear to be wet by the Si-O or Al-Si-O rather than other oxides, providing a benefit on the capture-ability of the ceramic microcell cell wall. The wetting behavior can be explained by the relationships between the interface energy and the contact angle.

• Applied Chemistry for Engineering
• /
• v.5 no.6
• /
• pp.1044-1055
• /
• 1994

The preparation of ZrC/SiC mixed powders from $ZrSiO_4/C$ and $ZrSiO_4/Al/C$ systems was attempted in the temperature range below $1600^{\circ}C$ under Ar or $Ar/H_2$ gas flow(100-500ml/min). The formation mechanism and kinetics of ZrC/SiC were suggested and the resultant powders were characterized. In $ZrSiO_4/C$ system, ZrC and SiC were formed by competitive reaction of $ZrO_2(s)$ and SiO(g) with carbon at temperature higher than $1400^{\circ}C$. The apparent activation energy for the formation of ZrC was approximately 18.5kcal/mol($1400-1600^{\circ}C$). In $ZrSiO_4/Al/C$ system, ZrC was formed by reaction of ZrO(g) with Al(l, g) and carbon at temperature higher than $1200^{\circ}C$, and SiC was formed by reduction-carbonization of SiO(g) with Al(l, g) and carbon at temperature higher than $1300^{\circ}C$. The products obtained at $1600^{\circ}C$ for 5h consisted of ZrC with lattice constant of $4.679{\AA}$ and crystallite size of $640{\AA}$, and SiC with lattice constant of $4.135{\AA}$ and crystallize size of $500{\AA}$. And also, the mean particle size was about $21.8{\mu}m$.