• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.10
• /
• pp.1-7
• /
• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.4
• /
• pp.619-625
• /
• 1997

$Si_3N_4$ powder with 2 wt% $Al_2O_3$ and 6 wt% $Y_2O_3$additives was gas pressure sintered (GPS). Characterization of the mechanical properties was compared with sintering conditions (temperature, pressure, time). Based on experimental result , the optimal condition of gas pressure sintering was found at $1900^{\circ}C$, 3 MPa for 1 hour. It is assumed that mechanical properties were degraded due to the grain coasening effects with increasing temperature or holding time. However, the grain size was decreased with increasing pressure, resulted in better strength, but lower fracture toughness. Present results suggested that optimization of processing parameters was impotant for better mechanical properties of $Si_3N_4$.

• Journal of the Korean Ceramic Society
• /
• v.26 no.2
• /
• pp.167-170
• /
• 1989

Al2O3/SiC composite-material was synthesized by the birth-spread mechanism through the carbothermal reduction reaction of SiO2 in Ha-Dong Kaolin with carbon powder under H2 gas atmosphere at 1300~140$0^{\circ}C$. Average diameter of synthesized SiC whiskers were 1${\mu}{\textrm}{m}$ and aspect ratio (c/a) was 10~100. Al2O3 particles and SiC whiskers were mixed homogeneously in the reacted pellet.

• Applied Chemistry for Engineering
• /
• v.10 no.7
• /
• pp.985-989
• /
• 1999

Silica($SiO_2$) thin film was synthesized by a low pressure metal organic chemical vapor deposition(LPMOCVD) using organic silane compound. Triethyl orthosilicate was used as a source material. Operation pressure was 1~100 torr at outlet of the reactor and deposition temperature was $600{\sim}900^{\circ}C$. The experimental results showed that the high reaction temperature and high source gas concentration led to higher growth rate of $SiO_2$. The step coverage of films on micro-scale trenches was fairly good, which resulted from the phenomena that the condensed oligomers flow into the trenches. We estimated a reaction path that the source gas polymerizes and produces oligomers (dimer, trimer, tetramer, etc.), which diffuse and condense on the solid surface. The chemical species in the gas phase at the outlet of reactor tube were analyzed by quadrapole mass spectrometer. The peaks, assigned to be monomer, dimer of source gas and geavier molecules, were observed at 650 or $700^{\circ}C$. At higher temperature($900^{\circ}C$), the peaks of the heavy molecules disappeared, because almost all the source gas and intermediate(polymerized oligomer) molecules were oxidized or condensed on colder tube wall.

• Journal of Sensor Science and Technology
• /
• v.18 no.2
• /
• pp.179-183
• /
• 2009

Toluene($C_6H_5CH_3$) gas sensors were fabricated using $PtO_x$ loaded with SWNTs by a new deposition method. The nanoparticle powders of SWNTs-$PtO_x$ composite were deposited on Si wafer substrates by a vacuum filtering deposition method. The fabricated sensors were tested against toluene gas which is a kind of the Volatile Organic Compounds. The composition ratio that exhibited the highest response to toluene gases was SWNTs : $PtO_x\;=\;99:1$ in wt% ratio at operating temperature of about $150^{\circ}C$. The response and recovery times of the sensors were as short as less than 1 min., respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.11a
• /
• pp.171-174
• /
• 1994

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1295-1297
• /
• 1993

Properties of oxynitride films oxidized by $N_2O$ gas after thermal oxidation and $N_2O$ oxide films directly oxidized using $N_2O$ gas on the bare silicon wafer have been studied. Through the AES analysis, Nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2O$ oxide has observed. Also, it could be presumed that there are differences in the mechanism of the growth of film by observing film growth. $N_2O$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces Si/oxynitride and Si/$N_2O$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of $N_2O$ oxide and oxynitride films has somewhat higher than those of thermal $SiO_2,\;N_2O$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Journal of Korean Society of Environmental Engineers
• /
• v.35 no.4
• /
• pp.240-246
• /
• 2013

$SF_6$ is the most important greenhouse gas with the highest GWP (global warming potential). The $SF_6$ decomposition study was performed with silicon carbide with aluminium oxide by microwave irradiation. DRE (Decomposition and Removal Efficiencie) of $SF_6$ were evaluated by GC-TCD unit using 3,000 ppm $SF_6$ gas. DRE of $SF_6$ was increased by $Al_2O_3$ contents to 10~30 wt%, otherwise $Al_2O_3$ content of 40~50 wt% was decreased. DRE of $SF_6$ up to 99.99% have been achieved in SiC-$Al_2O_3$ (20 wt%) and SiC-$Al_2O_3$ (30 wt%) above $900^{\circ}C$. Also, the DRE of SiC-$Al_2O_3$ (30 wt%) at $700^{\circ}C$ showed 96.72%. In addition to consideration microwave input energy and $Al_2O_3$ content, SiC-$Al_2O_3$ (30 wt%) can be suggested the best material to control $SF_6$. The results of this study suggest it is important to control content of $Al_2O_3$ in SiC for decomposition of $SF_6$ with microwave energy.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.230-235
• /
• 2010

In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of $SiO_2$ thin film using TCP-CVD equipment. We obtained a excellent $SiO_2$ thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [${\mu}m$/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions ($SiH_4:O_2$=50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at [$300^{\circ}C$].

• Journal of Sensor Science and Technology
• /
• v.23 no.5
• /
• pp.305-309
• /
• 2014

Well-ordered $TiO_2$ nanotubes with Au nanoparticles are a desirable configuration to enhance the gas sensing properties such as response and selectivity due to their high surface area to volume ratio and catalytic effect of Au nanoparticles. We have synthesized the well-ordered $TiO_2$ nanotubes directly on a Pt IDEs patterned $SiO_2/Si$ substrate and then decorated Au nanoparticles on inner and outer surface of $TiO_2$ nanotubes using electrodeposition method. The Au-decorated $TiO_2$ nanotubes shows ultrahigh response to $C2_H_5OH$ and the highest increasing ratio to $H_2$ compared with other gases.