• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.15-18
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• 2014

We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.204-207
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• 2016

Experimental study of UV-irradiated O₂/H₂ gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O₂/H₂ gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H₂. O₂ gas compete for UV (184.9 nm) absorption with PMMA producing O₃, O(¹D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.13-18
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• 2000

The SiOxNy thin films were prepared on Si(lOO) by reactive RF sputtering method. The reactive gas ratio and the power were used as parameters for depositing SiOxNy thin fims. The properties of ${SiO_x}{N_y}$ thin tilms were investigated by XRD, XPS, refractive index and extinction coefficient analyzer (n'||'&'||'k analyzer), and FfIR. It was found by the results of the x-ray diffraction measurement that SiOxNy thin films were grown to an amorphous structure. From the results of the XPS, and the n'||'&'||'k analyzer, it was found that refractive index was intended to increase with the increasement of the relative nitrogen contents of the ${SiO_x}{N_y}$ thin films.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.218-225
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• 2013

The densification behavior and strength of sintered reaction bonded silicon nitrides (SRBSN) that contain $Lu_2O_3-SiO_2$ additives were improved by the addition of fine Si powder. Dense specimens (relative density: 99.5%) were obtained by gas-pressure sintering (GPS) at $1850^{\circ}C$ through the addition of fine Si. In contrast, the densification of conventional specimens did not complete at $1950^{\circ}C$. The fine Si decreased the onset temperature of shrinkage and increased the shrinkage rate because the additive helped the compaction of green bodies and induced the formation of fine $Si_3N_4$ particles after nitridation and sintering at and above $1600^{\circ}C$. The amount of residual $SiO_2$ within the specimens was not strongly affected by adding fine Si powder because most of the $SiO_2$ layer that had formed on the fine Si particles decomposed during nitridation. The maximum strength and fracture toughness of the specimens were 991 MPa and $8.0MPa{\cdot}m^{1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.85-92
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• 1993

Oxynitride glasses in Na-Ca-Si-O-N system were prepared by melting at 135$0^{\circ}C$ for 2 hours in N2 gas. The effects of Si/Na mole ratio and the various Si3N4 contents were investigated. Stable oxynitride glasses can be obtained up to 9wt.% Si3N4 content in case the Si/Na mole ratio was 2.12 and 1.62, but $\beta$-Si3N4 was precipitated at 9wt.% Si3N4 content in case the Si/Na mole rtio was 1.12. Density (p), chemical durability, hardness (Hv), and fracture toughness (KIC) increased with increasing Si3N4 content. In cae the Si/Na mole ratio was 1.12, the increment of properties was remarkable but hardness and fracture toughness did not increase no longer owing to precipitation of $\beta$-Si3N4.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.399-405
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• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.327-330
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• 2006

We investigated the usefulness of $NbO_{x}$ nanopillars as an etching mask of dry etching for the formation of Si nanodot arrays. The $NbO_{x}$ nanopillar arrays were prepared by the anodic aluminum oxidation process of Al and Nb thin films. The etch rate and etch profile of $NbO_{x}$ nanopillar arrays were examined by varying the experimental conditions such as the concentration of etch gas, coil rf power, and dc bias voltage in the reactive ion etch system using the inductively coupled plasma. As the concentration of $Cl_{2}$ gas increased, the etch rate of $NbO_{x}$nanopillars decreased. With increasing coil rf power and dc bias voltage, the etch rates were found to increase. The etch characteristics and etch mechanism of $NbO_{x}$ nanopillars were investigated by varying the etch time under the selected etch conditions.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.426-432
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• 2011

The oxidation behavior of CVD ${\beta}$-SiC was investigated for Very High Temperature Gas-Cooled Reactor (VHTR) applications. This study focused on the surface analysis of the oxidized CVD ${\beta}$-SiC to observe the effect of impurity gases on active/passive oxidation. Oxidation test was carried out at $950^{\circ}C$ in the impurity-controlled helium environment that contained $H_2$, $H_2O$, CO, and $CH_4$ in order to simulate VHTR coolant chemistry. For 250 h of exposure to the helium, weight changes were barely measurable when $H_2O$ in the bulk gas was carefully controlled between 0.02 and 0.1 Pa. Surface morphology also did not change based on AFM observation. However, XPS analysis results indicated that a very small amount of $SiO_2$ was formed by the reaction of SiC with $H_2O$ at the initial stage of oxidation when $H_2O$ partial pressure in the CVD ${\beta}$-SiC surface placed on the passive oxidation region. As the oxidation progressed, $H_2O$ consumed and its partial pressure in the surface decreased to the active/passive oxidation transition region. At the steady state, more oxidation did not observable up to 250 h of exposure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.985-989
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• 2005

본 논문에서는 비정질 반도체 및 절연체의 etching을 RIE를 사용하여 etching 조건을 결정하는 요인(chamber pressure, gas flow rate, rf power, 온도 등)들을 변화시켜 실험하였고, gas는 비정질 실리콘 박막의 reactive ion etching에 주로 사용되는 $CF_4,\; CF_4+O_2,\;CCl_2F_2,\;CHF_3\;gas$ 등을 사용하였다. 여기서 실리콘 박막의 식각은 $CF_4,\;CCl_2F_2,\;gas$를 그리고 insulator 막인 SiNx 박막의 식각은 $CF_4+O_2,\;CHF_3\;gas$를 사용하였다. 특히 $CCl_2F_2$ gas는 insulator 막인 SiNx 박막과의 식각 selectivity가 6:1로서 우수하기 때문이다. 정확한 control에 의해 높은 수율 (Yield) 을 얻을 수 있어 cost를 절감할 수 있다.