• Applied Microscopy
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• 제39권1호
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• pp.41-48
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• 2009

본 연구는 색조화장품에 사용되는 진주광택안료의 특성을 주사전자현미경과 에너지분산분광분석기 및 열분석기를 사용하여 규명하였다. 본 연구에 사용된 인공합성 진주광택안료를 여성의 볼과 눈두덩 부위에 화장을 한 후 육안으로 관찰하였을 때 진주 광택안료는 보는 각도에 따라 흰색에서 보라색까지 다양한 색조로 빛을 반사하였다. 진주광택안료의 주사전자현미경 관찰 결과 안료는 얇은 판상의 다각형의 형태를 하고 있었으며 크기는 규격화된 모양이 아니고 다양하게 관찰되었다. 이런 조각의 크기는 약 $30{\mu}m$에서 $300{\mu}m$까지 측정되었고 안료 조각은 끝이 뾰족하거나 각진 상태로 존재하였다. 고배율의 주사전자현미경상에서 안료조각의 모서리 부위와 측면은 날카롭지 않은 타원형의 형태로 나타났으며 두께는 약 $9{\mu}m$로 측정되었다. 안료조각 표면은 직경이 약 60 nm의 이산화티탄 입자들에 의해서 피복되어 있었다. 진주광택안료의 에너지분산분석기를 사용하여 구성 원소 성분을 분석한 결과 안료의 표면은 O, Si, C, Na, Ca, Ti, Zn 등이 검출되었고 안료의 측면 부위도 동일한 성분들이 검출되었다. 이들 안료는 운모 티타니아(mica titania)로 확인되었다. 진주광택안료의 열분석 결과 초기 $100^{\circ}C$부터 $800^{\circ}C$까지 중량 감소는 큰 차이를 보이지 않았다. 열분석 결과 $115^{\circ}C$에서 1.1% 중량 감소를 하였고 $416^{\circ}C$에서 1.7% 감소하였으며 $797^{\circ}C$ 에서 1.9%의 중량이 감소된 것을 확인하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.75-75
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• 2018

Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

• Nuclear Engineering and Technology
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• 제53권1호
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• pp.282-293
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• 2021

This paper examines gamma-ray shielding properties of SBC-Bx glass system with the chemical composition of 40SiO₂-10B₂O₃-xBaO-(45-x)CaO- yZnO- zMgO (where x = 0, 10, 20, 30, and 35 mol% and y = z = 6 mol%). Mass attenuation coefficient (µ/ρ) which is an essential parameter to study gamma-ray shielding properties was obtained in the photon energy range of 0.015-15 MeV using PHITS Monte Carlo code for the proposed glasses. The obtained results were compared with those calculated by WinXCOM program. Both the values of PHITS code and WinXCOM program were observed in very good agreement. The (µ/ρ values were then used to derive mean free path (MFP), electron density (N_eff), effective atomic number (Z_eff), and half value layer (HVL) for all the glasses involved. Additionally, G-P method was employed to estimate exposure buildup factor (EBF) for each glass in the energy range of 0.015-15 MeV up to penetration depths of 40 mfp. The results reveal that gamma-ray shielding effectiveness of the SBC-Bx glasses evolves with increasing BaO content in the glass sample. Such that SBC-B35 glass has superior shielding capacity against gamma-rays among the studied glasses. Gamma-ray shielding properties of SBC-B35 glass were compared with different conventional shielding materials, commercial glasses, and newly developed HMO glasse. Therefore, the investigated glasses have potential uses in gamma shielding applications.

• 자원환경지질
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• 제30권6호
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• pp.553-566
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• 1997

Origin, behavior and enrichment of environmental toxic elements from the Deokpyeong area were investigated on the basis of major, trace and rare earth element geochemistry. Coaly metapelites of the Deokpyeong area are subdivided into grey phyllite, dark grey phyllite, coaly slate and black slate, which are interbedded along the Ogcheon Supergroup. The coaly slate had been mined for coal, but mining is closed. The coaly and black slates are lower contents of $SiO_2$ and $Al_2O_3$, and higher contents of LOI, CaO, $Na_2O$ and BaO as compared with the phyllitic rocks. Rare earth elements are highly enriched in the coaly and black slate. Average compositions (ppm) of minor and/or environmental toxic elements in the coaly and black slate are revealed as As=127, Ba=30,163, Cd=18, Cr=740, Cu=84, Mo=378, Pb=43, Sb=12, Se=44, U=144, V=8,147 and Zn=292, which are extremely high concentrations than those in the NASC compositions. Major elements (average enrichment index; 5.34) in the coaly metapelites are mostly depleted, excepting $P_2O_5$ and BaO, normalized by NASC. Rare earth elements (average enrichment index; 1.48) are enriched in the coaly slate. On the basis of NASC, minor and/or environmental toxic elements in the coaly metapelites were strongly enriched of all the elements with the exception of Co, Cs, Ni and Sr. Average enrichment index of trace elements in coaly metapelite is 31.51 (coaly slate; 51.94 and black slate; 15.46). Especially, enrichment index of potentially toxic elements (As, Ba, Cr, Cu, Mo, Ni, Sb, Se, U, V and Zn) of the rock is 46.10 (grey phyllite; 7.15, dark grey phyllite; 4.77, coaly slate; 88.96 and black slate; 22.11). These coal formations were deposited in basin of boundary between terrestrial and marine environments deduced to carbon, sulfur (C/S=2.2 to 275.7), trace and rare earth elements characteristics. Irregular behavior and dispersion between major, minor and rare earth elements of those metapelites indicates a variable source materials, incomplete mixing of differential source and/or reequilibrium of diagenesis and metamorphism.

• 자원환경지질
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• 제39권6호
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• pp.675-687
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• 2006

이 연구에서는 청풍지역 하상퇴적물에 대한 지구화학적 특성 규명을 통해, 주성분원소 및 미량원소에 대한 청풍지역의 자연배경치를 제시하고, 지구화학적 재해에 대해 예견하고자 한다. 이를 위해 물이 흐르고 있는 1차 수계를 대상으로 하상퇴적물시료를 채취하였고, 실험실에서 자연건조 시켰으며, 화학적 분석을 위해 알루미나 몰타르를 이용하여 200메쉬 이하로 분쇄하였다. 주성분원소 및 미량성분원소는 XRD, XRF, ICP-AES, NAA를 이용하여 분석하였다. 청풍지역 하상퇴적물의 기반암에 따른 지질집단별 지구화학적 특성 비교를 위해, 화강암질편마암지역, 메타텍틱편마암지역, 다도응회암지역, 유치역암 지역, 능주용암지역으로 분류하였다. 청풍지역 하상퇴적물 전체에 대한 주성분원소 함량은 $SiO_2\;47.31{\sim}72.81\;wt.%,\;Al_2O_3 \;11.26{\sim}21.88\;wt.%,\;Fe_2O_3\;2.83{\sim}8.39\;wt.%,\;CaO\;0.34{\sim}7.54\;wt.%,\;MgO\; 0.55{\sim}3.59\;wt.%,\;K_2O\;1.71{\sim}4.31\;wt.%,\;Na_2O\;0.56{\sim}2.28\;wt.%,\;TiO_2\;0.46{\sim}1.24\;wt.%,\;MnO\;0.04{\sim}0.27\;wt.%,\;P_2O_5\;0.02{\sim}0.45\;wt.%$이다. 청풍지역 하상퇴적물 전체에 대한 미량성분원소 및 희토류원소 함량은 $Ba\;700ppm{\sim}8990ppm,\;Be\;1.0{\sim}3.50ppm,\;Cu\;6.20{\sim}60ppm,\;Nb\;12{\sim}28ppm,\;Ni\;4.4{\sim}61ppm,\;Pb\;13{\sim}34ppm,\;Sr\;65{\sim}787ppm,\;V\;4{\sim}98ppm,\;Zr\;32{\sim}164ppm,\;Li\;21{\sim}827ppm,\;Co\;3.68{\sim}65ppm,\;Cr\;16.7{\sim}409ppm,\;Cs\;72{\sim}37.1ppm,\;Hf\;4.99{\sim}49.2ppm,\;Rb\;71.9{\sim}649ppm,\;Sb\;0.16{\sim}5.03ppm,\;Sc\;4.97{\sim}5ppm,\;Zn\;26.3{\sim}375ppm,\;Ce\;60.6{\sim}373ppm,\;Eu\;0.82{\sim}6ppm,\;Yb\;0.71{\sim}10ppm$의 범위를 보였다.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.172-175
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• 1989

1.3${\mu}{\textrm}{m}$ surface-emitting GaInAsP/InP LED was fabricated by two-phase supercooling LPE technique. The lattice mismatch of the grown DH wafer was typically 0.03%. The processes involve SiO2 CVD, lithography, Zn diffusion, lift-off, lapping, annealing, and wire bonding. The fabricated LED shows the optical power of 600㎼ at 70mA driving current, differential resistance of 4$\Omega$, the f3dB of 35MHz, and the FWHM of 1040{{{{ ANGSTROM }}. The peak wavelength of the fabricated LED was at 1.29${\mu}{\textrm}{m}$(100mA).

• 한국재료학회지
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• 제30권11호
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.321-322
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• 2009

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.99-102
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• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.