• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.301-307
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• 2017

The purpose of this study is to investigate the electrical properties of thick-film resistor (TFR) prepared from $CaO-ZnO-B_2O_3-Al_2O_3-SiO_2$ (CZBAS) glass containing $RuO_2$ particles. $RuO_2$-glass composite powder was made by mixing and melting oxide powders of constituents. For comparison, $RuO_2$ powder was simply mixed with glass powder. $RuO_2$-40wt% glass composite and mixture were dispersed in an organic binder to obtain printable resistor paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C/min$ in an ambient atmosphere. $RuO_2$-glass composite sample showed much higher resistance compared to the simple mixed sample. This could be attributed to the difference in conducting mechanism. After sintering at $850^{\circ}C$, temperature coefficient of resistance of composite sample was lower than that of simple-mixed sample. TFR with dense and homogeneous microstructure could be obtained by using $RuO_2$-glass composite powder.

• Journal of the Korean Chemical Society
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• v.31 no.6
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• pp.503-508
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• 1987

The protonation constants of 3,4 : 9,10-dibenzo-1,12-diaza-5,8-dioxacyclotetradecane $(NenOenH_4)$ and stability constants of its transition metal complexes have been determined by the potentiometric titration in 1 : 1 dioxane-water mixture with 0.1 ionic strength at $25^{\circ}C.$ For a given anion system, the stabilitv constants of the complexes are in the order of $Mn^{2+}<\;Co^{2+}\;< Ni^{2+}\;<\;Cu^{2+}\;>\;Zn^{2+}$, which accords with the Williams-Irving series.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.68-71
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• 2002

The electromagnetic properties and thermal behavior of ferrite cores used in the blocking filter for PLC were investigated as a function of additives. The highest density of 4.98 $g/cm^2$ and permeability of 8221 were obtained to the specimen added $MoO_3$ 400 ppm, $SiO_2$ 100 ppm and CaO 200 ppm since the microstructures were compacted through reduction of pores in the specimen. The permeability was increased up to 13094 at $110^{\circ}C$ with increasing temperature of specimen, however, it was decreased precipitously to under 100 over $110^{\circ}C$. The exothermic behavior was observed that the temperature of specimens became $102^{\circ}C$ at 1MHz. In the consequence, the ferrite core developed by this research will maintain the stable electromagnetic properties since the temperature of ferrite core rose to $93^{\circ}C$ in the range of 10kHz to 450kHz bandwidth qualified for PLC.

• Journal of Microbiology and Biotechnology
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• v.18 no.10
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• pp.1695-1700
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• 2008

An immunosensor based on surface plasmon resonance (SPR) with enhanced performance was developed through a mixed self-assembled monolayer. A mixture of 16-mercaptohexadecanic acid (16-MHA) and 1-undecanethiol with various molar ratios was self-assembled on gold (Au) surface and the carboxylic acid groups of 16-MHA were then coordinated to Zn ions by exposing the substrate to an ethanolic solution of $Zn(NO_3)_2\cdot 6H_2O$. The antibody was immobilized on the SPR surface by exposing the functionalized substrate to the desired solution of antibody in phosphate-buffered saline (PBS) molecules. The film formation in series was confirmed by SPR and atomic force microscopy (AFM). The functionalized surface was applied to develop an SPR immunosensor for detecting human serum albumin (HSA) and the estimated detection limit (DL) was 4.27 nM. The limit value concentration can be well measured between ill and healthy conditions.

• Economic and Environmental Geology
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• v.56 no.6
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• pp.745-764
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• 2023

In the Republic of Congo, Banded iron formations (BIFs) occur in two areas: the Chaillu Massif and the Ivindo Basement Complex, which are segments of the Archean Congo craton outcropping in the northwestern and southwestern parts of the country. They show interesting potential with significant mineral resources reaching 2 Bt and grades up to 60% Fe. BIFs consist mostly of oxide-rich facies (hematite/magnetite), but carbonate-rich facies are also highlighted. They are found across the country within the similar geological sequences composed of amphibolites, gneisses and greenschists. The Post-Archean Australian Shale (PAAS)-normalized patterns of BIFs show enrichment in elements such as SiO₂, Fe₂O₃, CaO, P₂O₅, Cr, Cu, Zn, Nb, Hf, U and depletion in TiO₂, Al₂O₃, MgO, Na₂O, K₂O, Sc, Th, Ba, Zr, Rb, Ni, V. REE diagrams show slight light REEs (rare earth elements; LREEs) compared to heavy REEs (HREEs), and positive La and Eu anomalies. The lithological associations, as well as the very high (Eu/Eu^*)_SN ratios> 1.8 shown by the BIFs, suggest that they are related to Algoma-type BIFs. The positive correlations between Zr and TiO₂, Al₂O₃, Hf suggest that the contamination comes mainly from felsic rocks, while the absence of correlations between MgO and Cr, Ni argues for negligeable contributions from mafic sources. Pr/Pr^* vs. Ce/Ce^* diagram indicates that the Congolese BIFs were formed in basins with redox heterogeneity, which varies from suboxic to anoxic and from oxic to anoxic conditions. They were formed through hydrothermal vents in the seawater, with relatively low proportions of detrital inputs derived from igneous sources through continental weathering. Some Congolese BIFs show high contents in Cr, Ni and Cu, which suggest that iron (Fe) and silicon (Si) have been leached through hydrothermal processes associated with submarine volcanism. We discussed their tectonic setting and depositional environment and proposed that they were deposited in extensional back-arc basins, which also recorded hydrothermal vent fluids.

• Clean Technology
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• v.6 no.1
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• pp.61-69
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• 2000

In this study, generation process and properties of inorganic industrial waste which can be used in cement industry were investigated. The scheme of recycling to use the selected waste as raw materials, mineralizer and flux, admixture and raw materials for special cement was decided and then various experiments were carried out. The experimental results were as follows ; In the use of industrial waste as raw materials, ferrous materials could be substituted by Cu-slag, Zn-slag, electric arc furnace or convertor furnace slag etc., and a siliceous material could be substituted by sand from cast-iron industry. By-products from sugar or fertilizer industry, which has $CaF_2$ as the main component, and jarosite from Zn refinery enabled clinker phases to be formed at lower temperature by $100{\sim}150^{\circ}C$. Adding Cu slag and STS sludge in proper proportion to cement improved properties of cement. Fly ash and limestone powder as admixture had the same effect on cement. As a raw material for special cement, aluminium waste sludge could be used in making ultra early strength cement, which had the compressive strength of $300kg/cm^2$ within 2hours. And two different ashes from municipal incinerator could be raw materials of the cement which was mainly composed of $C_3S$ and $C_{11}A_7{\cdot}CaCl_2$ as clinker phases.

• Clean Technology
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• v.20 no.2
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• pp.108-115
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• 2014

Various metal chlorides and acid catalysts in ionic liquid solvent were investigated to directly convert cellulose into 5-hydroxymethylfurfural (5-HMF). Metal chlorides containing Sn(II), Zn(II), Al(III), Fe(III), Cu(II), and Cr(III) were used and acidic ionic liquid immobilized on silica gel as an acid catalyst and commercial acid catalysts (sulfuric acid, chloric acid, Amberlyst-15,DOWEX50x8) were used for comparison studies. The acid strength and amount of acid catalysts were probed with Hammett indicator. The selectivity and yield of 5-HMF were determined with reaction temperature, reaction time and catalyst ratio. A catalyst containing $CrCl_3-6H_2O$ and $SiO_2-[ASBI]HSO_4$ showed the highest selectivity and it was found that this catalyst had higher activity than commercial solid acid catalysts such as Amberlyst-15 and DOWEX50x8. The selectivity of 5-HMF appeared to be mainly dependent on the acid strength and catalyst ratio, it was found that levulinic acid was produced from 5-HMF by rehydration.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.2 s.17
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• pp.81-87
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• 2004

Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.