• Korean Journal of Materials Research
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• v.16 no.1
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• pp.19-24
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• 2006

ZnO:Al(AZO) films prepared by rf magnetron sputtering on glass substrate and textured by post-deposition chemical etching were applied as front contact and back reflectors for ${\mu}c$-Si:H thin film solar cells. For the front transparent electrode contact, AZO films were prepared at various working pressures and substrate temperature and then were chemically etched in diluted HCl(1%). The front AZO films deposited at low working pressure(1 mTorr) and low temperature ($240^{\circ}C$) exhibited uniform and high transmittance ($\geq$80%) and excellent electrical properties. The solar cells were optimized in terms of optical and electrical properties to demonstrate a high short-circuit current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.717-722
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• 2012

In this work, we study on the effects of the oxygen pressure on the structural and crystalline of MgZnO thin films. MgZnO thin films were deposited on p-Si (111) substrates by using pulsed laser deposition. The X-ray diffraction analysis and energy-dispersive X-ray results revealed that as the oxygen pressure increased and Mg content in the MgZnO films decreased. Also Crystal structure was changed from cubic rock salt to hexagonal wurtzite. Alpha step and atomic force microscopy results showed that the thickness of the films are about 100 nm, and it has been found that the MgZnO (002) preferred orientation were deposited with increasing the oxygen pressure. Therefore, the effect of the preferred orientation, the crystallization grew in the form of the columnar; Grain size and RMS of the films were increased with increasing oxygen pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.248-248
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• 2011

ZnO was grown on a Au-catalyzed Si(100) substrate by using a simple vapor phase transport (VPT) with a mixture of zinc oxide and graphite powders. The ZnO grown at 800$^{\circ}C$ had a soccer ball structure with diameters of <500 nm. The ZnO soccer ball structure was, for the first time, observed in this work. The optical properties of the ZnO soccer balls were investigated by photoluminescence (PL). In the room-temperature (RT) PL of the ZnO soccer balls, a strong near-band-edge emission (NBE) and a weak deep-level emission were observed at 3.25 and 2.47 eV (green emission), respectively. The weak deep-level emission (DLE) at around 2.47 eV (green emission) is caused by impurities and structural defects. The FWHM of the NBE peak from the ZnO soccer balls was 110 meV. In addition, the PL intensity ratio of the NBE to DLE was about 4. The temperature-dependent PL was also carried out to investigate the mechanism governing the quenching behavior of the PL spectra.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2002.09a
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• pp.302-305
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• 2002

Scoria is a bomb-sized, generally vesicular pyroclast that is red or black in color and light in weight. In this study, scoria from Cheju was examined for the use as a sorbent. It is composed of plagioclase, olivine, hornblende, pyroxene, and glass, with an average composition of 49.84% SiO$_2$, 14.07% A1$_2$O$_3$, End 9.14% Fe$_2$O$_3$. Studies on kinetic isotherm sorption of Zn(II) onto scoria under various parameters such as initial zinc concentration, particle size, and adsorbent/adsorbate ratio were carried out using an agitated batch. The results suggest that the smaller scoria size and the larger adsorbent/adsorbate ratio produce the higher degree of Zn(II) removal. More effective removal also appears at lower initial Zn concentration. The sorption behavior of Zn(II) onto scoria seems to be mainly controlled by cation exchange. Studies on equilibrium isotherm sorption of other heavy metals (Pb, Cu, Cd) onto scoria were also conducted and compared with those onto powdered activated carbon (PAC) and non-organic matter scoria (NOS), The results suggest that the Cheju scoria has the slightly higher sorption capability than PAC and NOS, and the order of the effective sorption onto scoria and PAC is Pb > Cu > Zn > Cd. The monometal sorption onto scoria is more stronger than the competitive sorption.

• Economic and Environmental Geology
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• v.46 no.2
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• pp.199-206
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• 2013

The Daehyun gold-silver deposit consists of two hydrothermal quartz veins that fill NE-trending fractures in the Cambro-Ordovician calcitic marble. I have sampled wallrock, hydrothermaly-altered rock and gold-silver ore vein to study the element dispersion and element gain/loss during wallrock alteration. The hydrothermal alteration doesn't remarkably recognized at this deposit and consists of mainly calcite, dolomite, quartz and minor epidote. The ore minerals composed of arsenopyrite, pyrrhotite, pyrite, sphalerite, stannite, chalcopyrite, galena, electrum, native bismuth and silver-bearing mineral. Based on analyzed data, the chemical composition of wallrock consists of mainly $SiO_2$, CaO, $CO_2$ with amounts of $Al_2O_3$, $Fe_2O_3(T)$ and MgO. The contents of $SiO_2$, $Fe_2O_3(T)$, MgO, CaO and $CO_2$ vary significantly with distance from ore vein. The element dispersion doesn't remarkably recognized during wallrock alteration and only occurs near the ore vein margin because of physical and chemical properties of wallrock. Remarkable gain elements during wallrock alteration are $Fe_2O_3(T)$, total S, Ag, As, Bi, Cd, Cu, Ni, Pb, Sb, Sn, W and Zn. Remarkable loss elements are $SiO_2$, MnO, MgO, CaO. $CO_2$ and Sr. Therefore, Our result may be used when geochemical exploration carry out at deposits hosted calcitic marble in the Hwanggangri metallogenic district.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.196-196
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• 2003

현재 PDP(Plasma Display Panel) 상판의 유전체층은 저온에서 소성이 가능한 저융점 유리가 요구되기 때문에 융점을 낮추기에 용이한 PbO계가 주 성분으로 사용되어 오고 있으나. 최근 환경오염 등의 문제점으로 인해 Pb-free을 추구하는 새로운 유리조성의 연구가 많이 수행되고 있다. 이에 본 연구는 이미 PDP의 격벽과 봉착용 조성으로 많이 연구되어진 비스무스계 유리를 고려하여 PDP의 투명유전체용 조성을 찾고자 한다. Bi$_2$O$_3$-ZnO-SiO$_2$3원계를 기본으로 하는 유리조성에 유리망목형성제등을 첨가하여 열적특성과 광학적 특성을 조사하였다. 열적특성은 DTA를 이용하여 유리 전이 점(Tg) 및 융점(Tl)등을 측정하였고 TMA를 이용하여 선팽창계수(CTE)를 측정하였으며 유리섬유를 제조한 후 Littleton softening point (Ts)를 측정하였다. 광학적 특성은 페이스트를 제조하여 스크린프린팅 후 54$0^{\circ}C$~$600^{\circ}C$에서 1-2 h동안 소성하여 투광성을 조사하였다. 그 결과로, 열적특성으로는 400~5$50^{\circ}C$의 Tg, 450~$600^{\circ}C$의 Ts 및 5~11$\times$$10^{-6}$K의 CTE 값을 나타 내었고 광학적 특성으로 투광성은 양호한 특성(60% 이상)을 나타내었다. Bi$_2$O$_3$ 계를 현재 PDP의 투명유 전체에 적용시키기에는 유리용융시에 높은 점도와 환원 등의 문제점을 갖고 있지만 열적특성과 광학특성면에서는 가능성을 제시하여 향후 연구를 할 가치가 있다고 본다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.24-27
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• 2014

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.380-382
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• 2016

The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.