• Title/Summary/Keyword: SiInZnO

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Modeling of RF Sputtering Process for ZnO Thin film Deposition using Neural Network (신경회로망을 이용한 RF 스퍼터링 ZnO 박막 증착 프로세스 모델링)

  • Lim, Keun-Young;Lee, Sang-Keuk;Park, Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.7
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    • pp.624-630
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    • 2006
  • ZnO deposition parameters are not independent and have a nonlinear and complex property. To propose a method that could verify and predict the relations of process variables, neural network was used. At first, ZnO thin films were deposited by using RF magnetron sputtering process with various conditions. Si, GaAs, and Glass were used as substrates. The temperature, work pressure, and RF power of the substrate were $50\sim500^{\circ}C$, 15 mTorr, and $180\sim210W$, respectively : the purity of the target was ZnO 4 N. Structural properties of ZnO thin films were estimated by using XRD (0002) peak intensity. The structure of neural network was a form of 4-7-1 that have one hidden layer. In training a network, learning rate and momentum were selected as 0.2, 0.6 respectively. A backpropagation neural network were performed with XRD (0002) peak data. After training a network, the temperature of substrate was evaluated as the most important parameter by sensitivity analysis and response surface. As a result, neural network could capture nonlinear and complex relationships between process parameters and predict structural properties of ZnO thin films with a limited set of experiments.

Effect of Surface Improvement on Thin Film by In-Situ Laser Annealing Deposition (In-Situ Pulse Laser Annealing 증착에 의한 광학박막의 표면 개선 효과)

  • Lee, Se-Ho;Yu, Yeon-Serk
    • Korean Journal of Optics and Photonics
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    • v.20 no.1
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    • pp.34-40
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    • 2009
  • In-situ pulse laser (Nd-YAG, 2nd harmonics 532 nm) annealing used in physical vapor deposition of $MgF_2$, $SiO_2$ and ZnS thin films was shown to be effective in improving their surface roughness properties. Total integrated scattering (TIS) measurements of $MgF_2$ and $SiO_2$ samples deposited on glass substrates revealed that the laser irradiation of films at an energy of approximately $140\;mJ/cm^2$ at 532 nm with a repetition frequency of 10 Hz and pulse duration of 5 ns during the deposition resulted in total scatterings that were minimum. But in case of the ZnS samples, measurements revealed minimum total scattering at a laser energy of approximately $62\;mJ/cm^2$. Atomic Force Microscopy (AFM) has been used to evaluate the effect of pulse laser annealing on the surface roughness for thin film samples. The results were similar to the TIS measurements, indicating that surface roughness was decreased when the irradiated annealing pulse laser energy increased. But it also increased when the irradiated annealing pulse laser energy was over some limit that depended on the materials.

Low-temperature sintering and dielectric properties of the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ ceramics ((1-x)$BiNbO_4-(x)ZnNb_2O_6$ 세라믹스의 저온 소결 및 유전 특성)

  • Kim, Yun-Han;Yoon, Sang-Ok;Kim, Shin;Kim, Kwan-Soo;Kim, Kyung-Joo;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.284-284
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    • 2007
  • In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

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A Study of Etching Characteristics of the ZnO Thin Film Using a SF6/Ar Inductively Coupled Plasma (SF6/Ar 유도결합플라즈마를 이용한 ZnO 박막의 식각 특성에 관한 연구)

  • Kang, Sung-Chil;Lee, Yoon-Chan;Lee, Jin-Su;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.12
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    • pp.935-938
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    • 2011
  • The etching characteristics of ZnO and etch selectivities of ZnO to $SiO_2$ in $SF_6$/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at $SF_6$(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in $SF_6$/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.

Electrical and mechanical property of ZnO wire using catalyst-free chemical vapor deposition

  • Lee, Jin-Kyung;Jung, Un-Seok;Kim, Hak-Seong;Yun, Ho-Yeo;Seo, Mi-Ri;Jonathan, Ho;Choi, Mi-Ri;Wan, Jae;Kim, Gyu-Tae;Lee, Sang-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.477-477
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    • 2011
  • In this paper, we synthesize ZnO wire on Si substrate by catalyst-free thermal chemical vapor deposition (CVD). Each ZnO wire is grew up at different condition such as temperature and O2 flow rate. The Young's modulus of individual ZnO wires were estimated using quasi-static and dynamic measurements, as well as resonance frequency measurements. Using this system, current-voltage characteristics of each ZnO wire structure fabricated on a trench were measured. A new concept of electromechanical device structure combined with the piezoelectric effect of ZnO will be suggested in the end of this paper.

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Effect of manufacturing and dispersion of zinc crystalline glaze on crystal formation (아연 결정유약의 제조 및 분산이 결정생성에 미치는 영향)

  • Lee, Chiyoun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.6
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    • pp.240-246
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    • 2021
  • In the ceramic industry, a drastic decrease in crystalline formation was found even among the glazes well known for their high crystalline productivity when the ceramic glaze was stored in wet conditions over a period. This study aimed to investigate the reason for decreasing willemite crystals during storage. As the starting materials ZnO, calcined ZnO and frit 3110 are selected; the composition for zinc crystalline glazes was set through a three-component system with the materials. The firing condition was used from previous studies. The study was observed how wet conditions affected the crystallization of zinc crystalline glazes from a day to 24 weeks. The results were obtained by particle size analysis, XRD, Raman spectroscopy and SEM analysis. The results indicated that ZnO is advantageous in terms of willemite crystalline development and growth; however, Zn(OH)2 cluster, formed by the reaction with water during the storage, caused the decrease in ZnO level in the glaze. The reduction of ZnO in the glaze eventually interfered the willemite development and growth.

A properties and the fabrication of ZnO-Si system CO gas sensor with low power consumption (절전형 ZnO-Si계 CO 가스 센서 제작과 그 특성)

  • Yi, S.H.;Hung, H.K.;Kim, J.K.;Chang, B.H.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.324-326
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    • 1997
  • Low power ZnO-Si gas sensor below 500 mW at operating temperature has been fabricated by using micromachining technique. I-V measurement shows the power consumption of 260 mW at $400^{\circ}C$ The sensitivity of the sensor was 45 percent at operating temperature of $350^{\circ}C$(230 mW) with 1,000 ppm CO gas atmosphere. The response and the recovery time found out to be 94 sec and 180 sec, respectively, when CO gas was used. In order to measure the exact temperature of the gas sensing layer, Pt/Cr bilayer-RTD was used in this experiment.

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Enhanced Photo Current in n-ZnO/p-Si Diode Via Embedded Ag Nanoparticles for the Solar Cell Application

  • Ko, Young-Uk;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Yang, Seung-Dong;Kim, Seong-Hyeon;Kim, Jin-Sup;An, Jin-Un;Eom, Ki-Yun;Lee, Hi-Deok;Lee, Ga-Won
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.35-40
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    • 2015
  • In this study, an n-ZnO/p-Si heterojunction diode with embedded Ag nanoparticles was fabricated to investigate the possible improvement of light trapping via the surface plasmon resonance effect for solar cell applications. The Ag nanoparticles were fabricated by the physical sputtering method. The acquired current-voltage curves and optical absorption spectra demonstrated that the application of Ag nanoparticles in the n-ZnO/p-Si interface increased the photo current, particularly in specific wavelength regions. The results indicate that the enhancement of the photo current was caused by the surface plasmon resonance effect generated by the Ag nanoparticles. In addition, minority carrier lifetime measurements showed that the recombination losses caused by the Ag nanoparticles were negligible. These results suggest that the embedding of Ag nanoparticles is a powerful method to improve the performance of n-ZnO/p-Si heterojunction solar cells.

Effect of Titanium Dioxide in BaO-ZnO-B2O3-SiO2 Glasses on the Optical Properties of Color Conversion Glass (BaO-ZnO-B2O3-SiO2계 유리에서 TiO2의 첨가가 색변환 유리의 광특성에 미치는 영향)

  • Jeong, HyeonJin;Lim, Tae-Young;Kim, Jin-Ho;Lee, MiJai;Hwang, Jonghee;Hwang, Pyeong Ha;Park, Tae-Ho;Shin, Dongwook
    • Korean Journal of Materials Research
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    • v.24 no.12
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    • pp.710-714
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    • 2014
  • The effect of titanium dioxide ($TiO_2$) on the properties of color conversion glasses was examined for glasses based on $BaO-ZnO-B_2O_3-SiO_2$. One glass sample, containing 25 mol% of each component, was used as a reference; the other three glass samples contained 1, 3, and 5 mol% $TiO_2$, respectively. The four color conversion glass samples were prepared by sintering a mixture of glass frits and a $YAG:Ce^+$ phosphor. The characteristics of the color conversion glass samples, such as luminous efficacy, luminance, CIE (Commission International de I'Eclairage) chromaticity, CCT (Correlated Color Temperature), and CRI (Color Rendering Index) were analyzed according to the PL spectrum. The refractive index of the glass samples was found to increase with the titanium dioxide content. In conclusion, luminous efficacy of color conversion glasses increased as the content of $TiO_2$ was raised in the glass matrix.

Effects of Oxides Added in the Base of Low Voltage ZnO Varistors (저전압용 ZnO 바리스터의 기본조성에 첨가된 산화물의 영향)

  • 진희창;마재평;박수현
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.8
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    • pp.1211-1216
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    • 1989
  • To enhance the breakdown properties of low voltage-oriented ZnO varistor, sample were fabricated with additive oxides and sintering conditions. Addition of TiO2 lowered breakdown voltage` nonlinear resistances were lowered about 10V/mm and nonlinear exponents were not lowered with respect to it with the basic composition. To the samples added TiO2, V2ko5, and Cr2O3, microstructures were observed by SEM, moreover Ti was detected at grainboundaries and within the grain by EDS. Addition of Si-oxides and Sb2O3 increased nonlinear exponent and also increased nonlinear resistance, by addition of TiO2 to these samples at the sintering conditions of 1250\ulcorner and 1 hour we could fabricate low voltage-oriented ZnO varistors with nonlinear exponent of 30 or more and with real breakdown voltage of 30V/mm.

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