• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.283-284
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• 2008

Electrical and optical characteristics of indium tin oxide (ITO) and indium zinc oxide (IZO) films without and with $(SiO_2)_3(ZnO)_7$ at.% (SZO) film deposited on poly(ethylene naphthalate) (PEN) and poly(ethylene terephthalate (PET) substrates as a gas barrier layer for flexible display were studied. The ITO and IZO films with SZO gas barrier layer showed the improved properties which were both the high transmittance of average 80% in the visible light range and the decreased sheet resistance as compared to those of ITO and IZO films without SZO layer. Particularly, the PEN substrate with only SZO gas barrier layer had a low water vapor transmission rate (WVTR) of $\sim10^{-3}g/m^2$/day. Thus, we suggest that the SZO film with protection ability against the water vapor permeation can be applied to gas barrier layer for flexible display.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.160-160
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• 2017

Commercially pure titanium (Cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Plasma electrolyte oxidation (PEO) enables control in the chemical composition, porous structure, and thickness of the TiO2 layer on Ti surface. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study on electrochemical behaviors of PEO-treated Ti-6Al-4V Alloy in solution containing Zn and Si ions. The morphology, the chemical composition, and the microstructure analysis of the sample were examined using FE-SEM, EDS, and XRD. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat. The promising results successfully demonstrated the immense potential of Si/Zn-TiO2 coatings in dental and biomaterials applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.566-570
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• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.817-820
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• 2012

We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.17-18
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• 2007

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2\;in\;BCl_3$/Ar plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 50.3 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements while chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data the suggestions on the ZnO etch mechanism were made.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.427-433
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• 2006

We have fabricated nanodot arrays by using phase separated (PS- b- PMMA) diblock copolymer film and anodic aluminum oxide (AAO) membrane as templates with hexagonal arrays of cylindrical microdomains perpendicular to the substrate. Pulsed laser deposition technique was used to deposit various kinds of materials including Ag, Ni, ZnO, Si:Er, and Co/Pt onto Si substrates. The size and separation of nanodots correspond to those of the templates used, The density of nanodots was estimated to be $6{\times}10^{11}/cm^2$ and $1{\times}10^{10}/cm^2$ when the diblock copolymer and AAO were used, respectively. In particular, the optical properties of ZnO and Si: Er nanodot arrays were investigated and the strong photoluminescence at 380 nm and $1.54{\mu}m$ was observed from ZnO and Si:Er nanodot arrays, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.524-525
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• 2005

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $ZnO-B_2O_3-Bi_2O_3-SiO_2$, DTA, and XRD were used to characterize $ZnO-B_2O_3-Bi_2O_3-SiO$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA transformation point of $470^{\circ}C$, and firing condition of $540^{\circ}C$, 20min.

• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.309-325
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• 2004

The Cannington Ag-Pb-Zn deposit, northwest Queensland, Australia developed around the host rocks composing banded and migmatitic gneisses, sillimanite-garnet schist and amphibolite. Three crystal habits of sillimanite, gahnite (Zn-spinel) and garnet porphyroblasts occurred on the host rocks of the Cannington deposit could be used to delineate metamorphism that closely associated with Zn-mineralization in the deposit. Linkages the metamorphism to Zinc-mineralization is determined in four chemical systems, KFMASH (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$), KFMASHTO (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$-TiO$_2$-Fe$_2$O$_3$), NCKFMASH (Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$) and MnNCK-FMASH (MnO-Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$), using THERMOCALC program (version 3.1; Powell and Holland 1988). Partial melting in MnNCKFMASH and NCKFMASH systems occurs at lower temperature than in the KFMASH and KFMASHTO systems. The partial melting temperature decreases with increasing of Na/(Na+Ca+K) of the bulk rock compositions in the MnNCKFMASH system. The host rocks have melted ca 15 vol.% in the MnNCKFMASH system at peak metamorphic conditions (634$\pm$62$^{\circ}C$ and 4.8$\pm$1.3 kbar), but partial melting have not occurred in KFMASHTO system. Based on calculations of sillimanite isograd in different systems and sillimanite modal pro-portion, prismatic and rhombic sillimanite and gahnite porphyroblasts including prismatic sillimanite inclusion probably have resulted from pressure and temperature increasing through partial melting (from 550～$600^{\circ}C$, 2.0～3.0 kbar to 700～75$0^{\circ}C$, 5.0～7.0 kbar), furthermore have experienced N-S then W-E crustal shortening during D$_1$ and D$_2$ deformation. Consequently, Zinc mineralization related to gahnite growth occurred during D$_2$ and was redistributed and upgraded by partial melting and retrograde metamorphism into structural and rheological sites during shearing in D$_3$.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.30-36
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• 1996

ZnO thin-film sensors were fabricated by RF magnetron sputtering method. The composition of the device material was 4 wt. % $Al_{2}O_{3}$, 1 wt. % $TiO_{2}$ and 0.2 wt. % $V_{2}O_{5}$ on the basis of ZnO material for developing the high sensitive TMA gas sensor which have an appropriate resistivity and the stability for practical use. They were also grown on the $SiO_{2}/Si$ substrates heated at $250^{\circ}C$ under a pure oxygen pressure of about 10 mTorr with a power of about 80 watts for 10 minutes. So as to enhance the stability of the resistivity, the thin films were annealed from $400^{\circ}C$ to $800^{\circ}C$. The sensors made with the thin film which were annealed at $700^{\circ}C$ for 60 minutes in pure oxygen gas exhibited a good sensing properties for TMA gas. The thin film grown at this condition showed the maximum sensitivity of 550 in TMA gas concentration of 160 ppm, and exhibited a good stability and excellent linearity.