• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3451-3453
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• 2010

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.05a
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• pp.342-346
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• 2004

Recently there has been a great world-wide interest in developing and characterizing new nano-structured materials. These newly developed materials are often prepared in limited quantities and shapes unsuitable for the extensive mechanical testing. The development of depth sensing indentation methods have introduced the advantage of load and depth measurement during the indentation cycle. In the present work, ZnO thin films are prepared on the Glass, GaAs(100), Si(111), and Si(100) substrates at different temperatures by pulsed laser deposition(PLD) method. Because the potential energy in c-axis is law, the films always shaw c-axis orientation at the optimized conditions in spite of the different substrates. Thin films are investigated by X-ray diffractometer and Nano indentation equipment. From these measurements it is possible to get elastic modulus and hardness of ZnO thin films on all substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1096-1099
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• 2004

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.426-426
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• 2011

최근 들어 금속물질을 나노미터 단위로 구성할 수 있는 기술이 진보하면서, 금속 나노입자에 의해 발생되는 표면 플라즈몬에 대해서도 다양한 분야의 관심이 집중되고 있다. 유전체 물질을 기지상으로 하는 금속:유전체 나노복합체에서 금속 나노입자는 자유전자들의 집단 진동인 국소표면 플라즈몬 공진(Localized Surface Plasmon Resonance, LSPR)현상에 의해 국부전기장을 증대 시키고, 가시광 및 적외선 영역에서 특성 광흡수 거동을 보인다. 이와 같은 광학적 특성은 금속 나노입자들의 크기, 형태, 그리고 나노입자들의 주변을 구성하는 기지상 물질의 종류에 의해 조절된다. 금속:유전체 나노복합체에 나타나는 이러한 특성은 단순장식코팅 뿐만 아니라 광의 효율적 운용과 광을 매개로 한 기능발현을 필요로 하는 디스플레이, 광학 스위칭 소재 및 태양전지의 효율 향상을 위한 광흡수층 등 매우 다양한 응용이 가능하다. 본 연구에서는 다양한 굴절률을 갖는 재료들 중, 저굴절률을 갖는 SiO2와 고굴절률을 갖는 ZnS-SiO2를 기지상 재료로 선택하여 교번증착 스퍼터링법으로 Ag와 Au입자를 형성시켰다. Ag를 금속나노입자로 갖고, SiO2와 ZnS-SiO2를 기지상으로 하는 금속:유전체 나노복합체에서는 금속나노입자 형성에 따른 뚜렷한 표면 플라즈몬 공진 광흡수 피크가 관찰된 반면 Au나노입자는 기지상에 따라 각기 다른 광흡수 특성을 나타냈는데, SiO2기지상에서 명확한 광흡수 피크를 형성했던 경우와는 달리 ZnS-SiO2기지상에서는 특정파장에서의 흡수피크로 규정되기 어려운 넓은 파장범위에 걸친 완만한 광흡수 피크를 나타냈다. TEM 분석을 통해, ZnS-SiO2 기지상 내의 Au입자는 각각 독립되어 있는 Island형태가 아닌 유전체 기지상과 대칭적으로 혼합된 네트워크 형태의 Bruggeman 기하구조를 구성하고 있음을 확인하였고, 이는 Au입자가 형성되고 성장할 때 Au와 S의 높은 결합에너지로 인해 상당한 젖음 특성을 갖고 성장하였기 때문으로 판단됐다. 따라서 나노복합체를 구성하는 물질간의 광학적 특성뿐만 아니라 기지상 내에서의 금속입자의 성장거동에 대한 연구가 수반되었을 때, 금속:유전체 나노복합체의 표면 플라즈몬 공진 광흡수 특성을 보다 정확하게 제어할 수 있다.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.609-614
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• 2012

We report on the NO gas sensing properties of non-directional ZnO nanofibers synthesized using a typical electrospinning technique. These non-directional ZnO nanofibers were electrospun on an $SiO_2$/Si substrate from a solution containing poly vinyl alcohol (PVA) and zinc nitrate hexahydrate dissolved in distilled water. Calcination processing of the ZnO/PVA composite nanofibers resulted in a random network of polycrystalline ZnO nanofibers of 50 nm to 100 nm in diameter. The diameter of the nanofibers was found to depend primarily on the solution viscosity; a proper viscosity was maintained by adding PVA to fabricate uniform ZnO nanofibers. Microstructural measurements using scanning electron microscopy revealed that our synthesized ZnO nanofibers after calcination had coarser surface morphology than those before calcination, indicating that the calcination processing was sufficient to remove organic contents. From the gas sensing response measurements for various NO gas concentrations in dry air at several working temperatures, it was found that gas sensors based on electrospun ZnO nanofibers showed quite good responses, exhibiting a maximum sensitivity to NO gas in dry air at an operating temperature of $200^{\circ}C$. In particular, the non-directional electrospun ZnO nanofiber gas sensors were found to have a good NO gas detection limit of sub-ppm levels in dry air. These results illustrate that non-directional electrospun ZnO nanofibers are promising for use in low-cost, high-performance practical NO gas sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.97-98
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• 2008

n-ZnO/p-Si heterostructure is a good candidate for ZnO-based heterojunction light emitting diodes(LED) because of its competitive price and lower driving voltage. However, the conventional LED shows much lower extraction efficiency, because it has small top contact and large backside contact. In this structure, the injected current from the top contact enters the active region underneath the top contact. Thus, the emitted light is hindered by the opaque top contact. This problem can be solved by using a current-blocking layer(CBL) that prevents the current injection into the active region below the top contact.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.9-12
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• 2005

Characteristics of ZnO films grown on $Si-SiO_2$ substrates at temperatures of $200\sim400^{\circ}C$ by metalorganic chemical vapor deposition were investigated. The growth rates and mobilities of ZnO films were dependent on growth temperatures. The field-effect mobilities measured in thin-film transistor structure were $15cm^2/Vsec$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.325-327
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• 2011

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.