• Title/Summary/Keyword: SiInZnO

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Fabrication and Characteristics of ZnO:In Thin Film $NH_3$ Gas Sensor (ZnO:In 박막 $NH_3$ 가스센서의 제작 및 특성)

  • Kim, Jin-Hae;Jun, Choon-Bae;Park, Ki-Cheol
    • Journal of Sensor Science and Technology
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    • v.8 no.3
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    • pp.274-282
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    • 1999
  • The In doped ZnO(ZnO:In)thin films sensitive to $NH_3$ gas were prepared by the double layer depositions of In film by vacuum evaporation and ZnO film by rf magnetron sputtering method onto a $SiO_2$/Si wafer substrate, and subsequent heat treatment process. The structural and electrical characteristics of the ZnO:In thin films were studied as a function of heat treatment temperature by x-ray diffraction, scanning electron microscope and 4 point probing method. And the dependence of the sensitivity, the selectivity and the time response of the thin films on heat treatment temperature was investigated. The thin film heat-treated at $400^{\circ}C$ showed the highest sensitivity of 140% at an operating temperature of $300^{\circ}C$. The sensitivity towards CO, $NO_x$, gases observed in the same temperature.

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Effect of the $SiO_2$ Addition on the Electrical and Degradation Property of Bi based ZnO Varistor (비스무스계 ZnO 바리스타의 $SiO_2$ 첨가에 따른 전기적특성 및 열화특성)

  • Heo, Jong-Cheol;Kim, Hyung-Sik;Park, Tae-Gone
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1522-1524
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    • 1998
  • Experimental results on the effect of $SiO_2$ addition to Bi based ZnO varistor show that secondary phases in microstructure and nonlinear coefficient are increased, and that leakage current is decreased with $SiO_2$ additive content. The varistor with 0.1 mol%-$SiO_2$ additive exhibits lower resistive current than other specimen at ($E_{1mA}$ x 0.6) applied voltage and temperature of $115^{\circ}C$ for 350h.

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Heteroepitaxial Structure of ZnO Films Deposited on Graphene, $SiO_2$ and Si Substrates

  • Pak, Sang-Woo;Cho, Seong-Gook;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.309-309
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    • 2012
  • Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

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Effect of Ambient Gases on Thermal Annealed ZnO films deposited on Si(111) Substrates (Si(111) 기판 위에 증착된 ZnO 박막의 열처리 분위기에 따른 구조적, 광학적 특성 연구)

  • Lee, Ju-Young;Kim, Hong-Seung;Jung, Eun-soo;Jang, Nak-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.8
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    • pp.734-739
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    • 2005
  • Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.

Effect of Al and Mg Contents on Wettability and Reactivity of Molten Zn-Al-Mg Alloys on Steel Sheets Covered with MnO and SiO2 Layers

  • Huh, Joo-Youl;Hwang, Min-Je;Shim, Seung-Woo;Kim, Tae-Chul;Kim, Jong-Sang
    • Metals and materials international
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    • v.24 no.6
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    • pp.1241-1248
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    • 2018
  • The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) $SiO_2$-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at $460^{\circ}C$ and the variation in the contact angles (${\theta}_c$) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the $a-SiO_2$-covered steel exhibited nonreactive, nonwetting (${\theta}_c>90^{\circ}$) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the $a-SiO_2$ layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the $a-SiO_2$ layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and $SiO_2$, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

Effect of CaO on the antibacterial property of zinc borosilicate glasses (Zinc borosilicate 유리의 CaO 첨가에 따른 항균력 개선 효과 검증)

  • Minsung Hwang;Jaeyeop Chung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.5
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    • pp.187-190
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    • 2023
  • In this study, antibacterial glasses were developed by the addition of CaO in ZnO-Na2O-B2O3-SiO2 glass system. The effect of the addition of CaO on the thermal properties, dissolution properties, surface zeta potential and antibacterial activity were analyzed. Differential thermal analysis (DTA) analysis was performed to analyze the thermophysical properties of 30ZnO-xCaO-20Na2O-30B2O3-(20-x)SiO2 (x = 0, 2, 4, 6, 8, 10 mol%). It was confirmed that the glass transition temperature decreased as the CaO content increased. The amount of released Zn2+ ions and surface zeta potential of glass samples increased with increasing CaO concentration. For these reasons, the antibacterial activity was dramatically improved. By the addition of CaO, we could successfully develop an antibacterial glass with 99.9 % antibacterial activity against both Escherichia coli and Staphylococcus aureus.

Properties of ZnO nanostructures by metal deposited on Si substrates (Metal 증착한 Si 기판 상의 ZnO 나노 구조 특성)

  • Jang, Hyeon-Gyeong;Jung, Mi-Na;Park, Seung-Hwan;Shin, Dae-Hyeon;Yang, Min;Yao, Takafumi;Chang, Ji-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.1034-1037
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    • 2005
  • The variation of shapes and related properties of ZnO nanostructures grown on the metal pattern and Si substrate have been investigated. Ni, Cr metal patterns were formed on Si (111) substrates by e-beam evaporation, and ZnO nanostructures were fabricated on it by using thermal evaporation of Zn powder in air. Growth temperature was controlled from 500 $^{\circ}$C to 700 $^{\circ}$C. When the growth temperature was relatively low, no considerable effect was found. However, UV emission intensity decreased, and Green-emission intensity, which is regarded as originated from the defect state in the ZnO nanostructure, increased as growth temperature increase. Also, the variation of nanostructure shape at high temperature (700 $^{\circ}$C) is understood in terms of the enhanced incorporation of metal vapor during the nanostructure formation.

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Synthesis and Characterization of High Luminance ${Zn_2}{SiO_4}$:Mn Phosphors (고발광 ${Zn_2}{SiO_4}$:Mn 형광체의 제조 및 특성)

  • 성부용;정하균;박희동;김대수
    • Journal of the Korean Ceramic Society
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    • v.37 no.8
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    • pp.774-780
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    • 2000
  • In order to improve luminescence prperty of phosphors, we have synthesized Zn2SiO4:Mn phosphors by a new chemical synthetic route, i.e., the homogeneous precipitation method. This method has featured that the formation of phosphoris completed at relatively low temperature of 105$0^{\circ}C$ and the particle morphology exhibits spherical shape to be well-dispersed and uniform size. At all the Mn concentration explored, phosphors prepared by this method have exhibited the improved emission intensities. In particular, the emission intensities of phosphors with Mn doping contents between 1 at% and 3.5 at% were higher about 40% than that of commercial phosphor. On the other hand, the decay time has been decreased from 23 ms to 11 ms with increasing Mn concentration. In addition, the phosphor composition containing 3 at% Mn has displayed the most saturated color.

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Hydrothermally deposited Hydrogen doped Zinc Oxide nano-flowers structures for amorphous silicon thin film solar cells

  • Kim, Yongjun;Kang, Junyoung;Jeon, Minhan;Kang, Jiyoon;Hussain, Shahzada Qamar;Khan, Shahbaz;Kim, Sunbo;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.236.1-236.1
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    • 2015
  • The surface morphology of front transparent conductive oxide (TCO) films is very important to achieve high current density in amorphous silicon (a-Si) thin film solar cells since it can scatter the light in a better way. In this study, we present the low cost hydrothermal deposited uniform zinc oxide (ZnO) nano-flower structure with various aspect ratios for a-Si thin film solar cells. The ZnO nano-flower structures with various aspect ratios were grown on the RF magnetron sputtered AZO films. The diameters and length of the ZnO nano-flowers was controlled by varying the annealing time. The length of ZnO nano-flowers were varied from 400 nm to $2{\mu}m$ while diameter was kept higher than 200 nm to obtain different aspect ratios. The ZnO nano-flowers with higher surface area as compared to conventional ZnO nano structure are preferred for the better light scattering. The conductivity and crystallinity of ZnO nano-flowers can be enhanced by annealing in hydrogen atmosphere at 350 oC. The vertical aligned ZnO nano-flowers showed higher haze ratio as compared to the commercially available FTO films. We also observed that the scattering in the longer wavelength region was favored for the high aspect ratio of ZnO nano-flowers. Therefore, we proposed low cost and vertically aligned ZnO nano-flowers for the high performance of thin film solar cells.

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