• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.598-601
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• 2000

We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 1986년도 Priceedings Of The Third Korea-Japan Seminar On New Ceramics
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• pp.287-304
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• 1986

High quality monocrystalline $\beta$-SiC thin films were grown via two-step process of conversion of the Si(100) surface by reaction with $C_2H_4$ and the subsequent chemical vapor deposition (CVD) at $1360^{\circ}C$ and 1 atm total pressure. Four dopants, B and Al and p-type, and N and P for n-type, were also incorporated into monocrystalline $\beta$-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped $\beta$-SiC thin films and to investigate the effects of dopants on the structure of the doped $\beta$-SiC thin films. The changes in the shape of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples, The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at the 850 $cm^{-1}$ respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.837-842
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• 2010

This paper describes the crystallinity, growth rate, and surface morphology of single crystalline 3C-SiC (cubic silicon carbide) thin films grown with several carbonization conditions such as temperature, $C_3H_8$ flow rate, time. In case of carbonization, an increase in the carbonization temperature caused a increase in the size and numbers of unsealed void (big black spot) which decrease the crystallinity. In addition, optimal $C_3H_8$ flow rate made carbonization layer form well and prevented the formation of voids. Also, after a period of time, the growth of carbonization layer did not increase no more. The single crystalline 3C-SiC thin films on optimal carbonized Si substrate showed an improvement on the crystallinity, the growth rate, the roughness, and the carrier concentration.

• 센서학회지
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• 제17권4호
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• pp.256-260
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• 2008

This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin films with various doping concentration, in which poly 3C-SiC thin fil's mechanical properties according to the n-doping concentration 1($9.2{\times}10^{15}cm^{-3}$), 3($5.2{\times}10^{17}cm^{-3}$), and 5%($6.8{\times}10^{17}cm^{-3}$) respectively were measured by nano indentation. In the case of $9.2{\times}10^{15}cm^{-3}n$-doping concentration, Young's modulus and hardness were obtained as 270 and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin films doped by 5% concentration was 15 nm, which is also the best of them.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.477-480
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• 2002

ULSI(ultra large scaled integrated circuits)의 고집적화와 고속화를 위한 다층 배선 기술 중에서 층간 절연막의 특성을 향상시켜주는 것은 매우 중요한 요소이다. 소자의 소형화에 따른 절연층의 용량에 의한 신호의 지연을 방지하고 금속배선간의 상호간섭을 막아주기 위해서 현재 요구되는 0.13$\mu\textrm{m}$급 소자의 경우에서는 유전율이 매우 낮은 k$\leq$2.0인 층간 절연막이 필요하게 된다. 이러한 차세대 반도체 소자의 층간 절연물질로서 사용될 유력한 저유전 물질로 Nanoporous silica(k=1.3~2.5)를 적용하려는 연구가 진행되고 있다(1)-(3). 그러한 물질 중에 하나가 organosilicate films이 있는데 carbon-doped oxides, silicon-oxicarbides, carbon-incorporated silicon oxide film, organic-inorganic hybrid type Si-O-C thin films 혹은 organic-inorganic hybrid silica materials 등으로 불린다. 이에 본 연구에서는 nano-pore를 갖는 유무기 하이브리드 구조의 저유전 박막을 BTMSM/O$_2$의 혼합된 precursor를 사용하여 ICPCVD 방법에 의해 형성하였다. 총 유량을 20sccm이 되도록 하여 $O_2$:BTMSM(Ar)의 유량비를 변화시키며, 작업진공도는 300mTorr였다. 기판은 가열하지 않고, p-type Si(100) 위에 Si-O-C-H 박막을 형성하였다. 열적안정성을 조사하기 위하여 30$0^{\circ}C$, 40$0^{\circ}C$, 50$0^{\circ}C$에서 30분간 열처리하여 비교 분석하였다. 형성된 박막의 특성은 XPS로 분석하여 유전상수와의 상관관계를 조사하였다.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.131-131
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• 2009

This paper describes the fabrication and characteristics of polycrystalline (poly) 3C-SiC microresonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ in-situ N-doping concentrations. In this work, the crystallinity, carrier concentration and surface morphology of the grown thin films were evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The 1.2 ${\mu}m$ thick cantilvers and the 0.4 ${\mu}m$ thick doubly-clamped beam microresonators with various lengths were implemented using in-situ doping poly 3C-SiC thin films. The characteristics of the poly 3C-SiC microresonators were evaluated using quartz and a laser vibrometer under vacuum at room temperature. The resonant frequencies of the SiC microresonators decreased with doping concentrations owing to the reduction of the Young's modulus of the poly 3C-SiC thin films. It was confirmed that the resonant frequencies of the poly 3C-SiC microresonators are controllable by adjusting the doping concentrations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.459-462
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• 2000

A new method for the fabrication of poly-Si films is reported using by alternating magnetic flux crystallization (AMFC) of LPCVD a-Si films. In this work we have studied the crystallization of LPCVD a-Si films by alternating magnetic flux. A-Si films were 1200$\AA$-thick deposited at 48$0^{\circ}C$ at a total pressure of 0.25Torr using Si$_2$H$_{6}$/H$_2$. After this step, these a-Si films were thermally annealed by Alternating Magnetic Flux at 43$0^{\circ}C$ for 1hours. The annealed films were characterized using X-ray diffraction (XRD), Raman Spectra, Atomic Force Microscopy(AFM). Both alternating magnetic flux crystallization and solid phase crystallization were investigated to compare enhanced crystallization a-Si. We have found that the low temperature crystallization method at 43$0^{\circ}C$ by alternating magnetic flux.x.