• Title/Summary/Keyword: SiC-C films

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The evolution of microstructures and electrical properties of $Y_2O_3$ thin films on si(100) upon annealing treatments (열처리에 따른 $Y_2O_3$ 박막의 미세 구조 변화와 전기적 특성 변화에 대한 고찰)

  • 정윤하;강성관;김은하;고대홍;조만호;황정남
    • Journal of the Korean Vacuum Society
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    • v.8 no.3A
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    • pp.218-223
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    • 1999

  • We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

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Piezoelectric and electromechanical properties of PZT films and PZT microcantilever (PZT 박막의 압전 특성 및 MEMS 기술로 제작된 PZT cantilever의 전기기계적 물성 평가)

  • 이정훈;황교선;윤기현;김태송
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.177-180
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    • 2002

  • Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

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Study on the Luminescence of Si Nanocrystallites on Si Substrate fabricated by Changing the Wavelength of Pulsed Laser Deposition (펄스레이저 증착법의 레이저 파장변환에 의한 실리콘 나노결정의 발광 특성 연구)

  • 김종훈;전경아;최진백;이상렬
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.4
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    • pp.169-172
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    • 2003

  • Silicon nanocrystalline thin films on p-type (100) silicon substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532, and 1064 nm. The base vacuum in the chamber was down to $10^-6$ Torr and the laser energy densities were 1.0~3.0 J/$\textrm{cm}^2$ After deposition, silicon nanocrystalline thin films have been annealed at nitrogen gas. Strong Blue and green luminescence from silicon nanocrystalline thin films have been observed at room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355 to 1064 nm.

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A study on the formation and properties of TMDSO/$O_2$ thin film by the RF Plasma CVD (RF Plasma CVD에 의한 TMDSO/$O_2$의 합성과 박막의 특성에 관한 연구)

  • Kim, I.S.;Kim, G.Y.;Kang, D.P.;Yun, M.S.;Park, S.H.
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.265-268
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    • 1991

  • In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

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Deposition of Large Area SiC Thick Films by Low Pressure Chemical Vapor Deposition (LPCVD) Method (저압 화학증착법에 의한 대면적 SiC 후막의 증착)

  • 김원주;박지연;김정일;홍계원;하조웅
    • Journal of the Korean Ceramic Society
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    • v.38 no.5
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    • pp.485-491
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    • 2001

  • 일반 산업 및 원자력 관련 산업용 구조소재의 표면특성 향상을 위해 저압 화학기상 증착법에 의해 15~25cm 직경의 흑연기판 위에 고순도의 치밀한 SiC 증착층을 제조하였다. 미세구조와 두께가 균일한 증착층을 얻기 위하여 증착온도의 균일성, 반응가스 고갈효과, 가스 흐름 형태 등의 영향을 고려하였다. 이중에서 반응 용기내의 가스 흐름 형태가 증착층의 균일도에 가장 큰 영향을 주는 것으로 판단되었으며 가스 주입구의 위치와 크기를 조정함으로써 25cm의 직경을 갖는 흑연 기판에 두께 편차가 $\pm$12% 이내인 SiC 증착막을 제조할 수 있었다.

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