• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.145-150
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• 2007

The $SiO_2$ and $TiO_2$ thin films for the multilayer interference filter application were manufactured by electron beam process. In case of electron beam process with ion source, the anode current was controlled by gas volume ratio of $O_2$ and Ar. Substrate temperature of electron beam deposition without ion source was increased from 100 to $250^{\circ}C$ with $50^{\circ}C$ increment. The surface roughness values of $SiO_2$ thin films was most low value at $200^{\circ}C$ substrate temperature and 0.2 A anode current respectively. And the surface roughness values of $TiO_2$ thin films was most low value at room temperature and 0.2 A anode current repectively. The refractive index of $SiO_2$ and $TiO_2$ thin films to be deposited with ion source was usually lower than that of thin films without ion source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.893-896
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• 2000

The SrBi$_2$Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite Phase was crystalized to 650[$^{\circ}C$] and Bi-layered perovskite phase was crystalized above 700[$^{\circ}C$]. The maximum remanent polarization is 11.73 ${\mu}$C/cm$^2$at 500[$^{\circ}C$] of substrate temperature and 750[$^{\circ}C$] annealing temperature for 30min.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1699-1705
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• 1989

Nitridation of about 300\ulcornerSiO2 filmss thermally grown on Si was performed in NH3 plasm ambient (0.2-2 torr) at 900\ulcornerC-1100\ulcorner for 15-20 minutes. The peoperties of those films have been investigated by analyzing the AES and the SIMS data, and the results of the I-V and the C-V measurements. At the plasma ambient of less than 1.5 torr pressure, etching of the films have been shown. Above the 1.5 torr pressure, however, SiO2 films were nitrided as SiIxNy. Plasma thermal nitridation of SiO2 by addition of small amount (6%) of CF4 to the NH3 showed higher pile-up N concentration in the surface region of SiOxNy film. The higher the nitridation temperature is and the longer the nitridation time is the larger the dielectric constant is. The plasma thermal nitridation of silicon dioxide on silicon causes the flat-band voltage shift based on the formation of the positive charge. The conduction mechanism for SiOxNy films could be elucidated by Fowler-Nordheim tnneling model. By SIMS analysis, surface of the film nitrided in plasma process has less contamination than that of the film nitrided in open-tube process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.30-37
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• 1997

Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride were investigated in the viewpoint of diffusion barrier to copper. the diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. the layers deposited at $N_2$ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to $700^{\circ}C$, mainly due to the phase transformation of molybdenum to $\gamma$-Mo$_2$N phase. The increase in the N gas ratio in deposition elevates the lower limit of barrier failure temperature. Futhermore, amorphous molybdenum nitride films deposited at 20$0^{\circ}C$ and 30$0^{\circ}C$ did not fail, while the crystalline $\gamma$-Mo$_2$N films deposited at 40$0^{\circ}C$ and 50$0^{\circ}C$ showed signs of interlayer interactions between Cu and Si after annealing at 75$0^{\circ}C$ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.

• Journal of the Korean Magnetics Society
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• v.10 no.6
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• pp.280-294
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• 2000

[(300nm)Ta/(500nm)NdFeB/(300nm)Ta] thin films were deposited at 5 mTorr Ag gas pressure by RF-DC magnetron sputtering, and their magnetic properties were investigated. The [Ta/NdFeB/Ta] films deposited on heated Si substrates showed high perpendicular anisotropy and excellent hard magnetic properties. The films sputtered at tile substrate temperature of T$\sub$s/=650$^{\circ}C$ and 700$^{\circ}C$ showed (BH)$\sub$max/=20 MGOe and $\sub$i/H$\sub$c/= 18.9 kOe along the perpendicular direction to the film plane, respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.321-327
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• 2000

Tungsten(W) thin films with good adhesion property and low resistivity (~10 $\mu$\Omega$$.cm) were deposited directly on $SiO_2$ by LPCVD. The adhesion property of W thin films on $SiO_2$ improves as the temperature and/or $SiH_4/WF_6$ gas ratio increase. Specifically tungsten thin films could be deposited on $SiO_2$ even at $350^{\circ}C$ if the gas ratio of 2 was employed. The resistivity of tungsten thin films deposited at $350^{\circ}C$ was high due to the presence of $\beta$-W. However, the resistivity can be minimized by increasing the amount of $H_2$ gas flow. Therefore, it is shown in this work that the adhesion of tungsten thin films on $SiO_2$ can be improved simply by controlling the process parameters (e.g., temperature, gas ratio and $H_2$ flow rate) without employing complex deposition methods or additional glue layers.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.235-238
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• 1998

Ferroelectric $LiNbO_3$ thin films were grown directly on Si(100) substrates by 13.55MHz RF magnetron sputtering system using a ceramic target ($Nb_2O_5/Li_2C0_3$ = 51.4/48.6). Because high temperature process have to avoided to prevent degradation of the interface (insulator/Si), $LiNbO_3$ thin films were deposited below $300^{\circ}C$. After as-deposited films were performed RTA treatments in an oxygen ambient at $600^{\circ}C$ for 60s, electrical measurements performed films before and after anneal treatment. In high field region, the leakage current density of the films after annealing was deceased about 4order and the resistivity of these was increased to about 5\times 10^{11} \Omega \cdot cm$ at 500kV/cm. In accumulation region of C-V curve, we calculated dielectric constant of thin film $LiNbO_3$ as 27.9 which is close to that of bulk value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.