• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.88-89
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• 2003

During the past decade, giant magnetotransport phenomena such as giant magetoresistance (GMR) in thin films and in manganese perovskites, and, giant magnetoimpedance (GMI) in soft magnetic amorphous ribbons, have brought much interest in the basic physical understanding and their applications as magnetic recording heads and in magnetic sensors technology. Among the parameters required for the quality of a magnetic sensor, temperature dependences of GMR and GMI profiles are playing an important role. In the present work, we have studied temperature dependences of the longitudinal permeability and giant magnetoimpedance effect in $Co_{70}$F $e_{5}$S $i_{15}$ N $b_{2.2}$C $u_{0.8}$ $B_{7}$ amorphous ribbons expecting as a promising candidate in the domain of magnetic sensors.rs.rs.rs.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.220.1-220.1
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• 2014

본 연구에서는 PECVD 공법 중에 이온화 에너지가 높은 선형이온빔 소스를 이용하여 고온에서 전도성 카본박막을 코팅하였다. 카본 박막 코팅을 위한 Precursor는 $C_2H_2$ gas를 이용하였으며, 온도에 따른 카본 박막의 전기적 특성 및 두께에 따른 카본 박막 성장 구조를 분석하였다. 카본 박막의 전기적 특성은 Interfacial contact resistance (ICR) 방법으로 측정하였으며, 접촉 저항 측정을 위한 모재는 SUS316L stainless steel을 사용하였고 카본 박막 성장 구조 분석을 위해서는 폴리싱된 Si-wafer를 사용하였다. 선형이온빔 소스를 이용하여 상온에서 증착한 카본 코팅의 접촉저항 값은 50 nm 코팅 두께에서 $660m{\Omega}cm^2@10kgf/cm^2$으로 비정질상의 특성을 나타냈으며, 고온에서는 $14.8m{\Omega}cm^2@10kgf/cm^2$으로 온도가 증가함에 따라 비정질상의 카본 박막이 전도성을 가지는 카본박막으로의 성장을 확인할 수 있었다. 또한 전도성 카본 박막의 성장 구조 분석은 FE-SEM 및 Raman spectrum 분석을 통해 확인하였으며, 그 결과 코팅 두께가 증가할수록 카본 입자들은 수nm에서 약 150 nm의 카본 cluster를 형성하며 성장하였다. 이때 전도성 카본 박막의 두께에 따른 접촉저항의 값은 고온 조건에서 카본 박막의 두께가 약 100 nm일 때, $12.1m{\Omega}cm^2@10kgf/cm^2$의 가장 낮은 값을 가졌다. 위의 결과를 경제성이 아주 우수한 대면적 전도성 나노 카본 박막의 상용화 가능성이 높아질 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• Korean Journal of Materials Research
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• v.6 no.9
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• pp.900-904
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• 1996

비정질 실리콘의 표면에 Ni과 Pd를 형성하여 측면으로의 결정화 속도를 향상시켰다. Ni에 의해 비정질 실리콘이 측면으로 결정화될 때 그 성장 속도는 50$0^{\circ}C$에서 3w$\mu\textrm{m}$/hour였으며 이때의 활성화 에너지는 2.87eV로 나타났다. Pd의 경우는 Pd2Si의 형성에 의해 압축 응력이 유발되어 Pdrks의 간격이 좁을수록 측면으로의 결정화 속도가 증가하였다. Ni과 Pd을 각각 다른 부분에 증착시키고 결정화시키면 Ni에 의해 측면으로 결정화되는 속도가 Ni만으로 결정화시킬 때 보다 약 2배 이상의 측면결정화 속도를 보였다.

• Korean Journal of Materials Research
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• v.7 no.9
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• pp.811-823
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• 1997

차세대 반도체 배선분야에서, Cu박막은 현재의 AI을 대체할 물질로서 대두되고 있으며 CVD에 의한 선택적 증착은 Cu의 patterning과 관련하여 상당한 관심을 일으키고 있다. 본 연구에서는 (hfac)Cu(VTMS)의 유기원료를 사용하여, CVD공정변수, 운반기체, 표면 처리 공정에 따른 SiO$_{2}$, TiN, AI기판에 대한 선택성을조사하였다. 선택성은 저온(15$0^{\circ}C$), 저합(0.3Torr)에서 향상될 수 있었으며, 특히, HMDS in-situ-predosing공정에 의해 더욱 향상될 수 있었다. 모든 경우에 대해, H$_{2}$운반기체가 Ar 보다 짧은 incubation time과 높은 증착 속도가 얻어졌으며, Cu입자들의 크기가 작고 연결상태가 보다 양호하였다. 이는 H$_{2}$경우에 기판표면에 원료가 흡착되어 핵을 형성시키는 위치 (-OH)가 보다 많이 제공되기 때문으로 여겨진다. 이러한 미세구조의 차이는 H$_{2}$경우에 보다 낮은 비저항을 얻게 했다. HMDS in-situ predosing공정에 의한 Cu박막내 불순물 차이는 없었으며 뚜렷한 비저항의 차이도 나타나지 않았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.496-496
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• 2011

A very simple and cost-effective method for fabrication of SiOx-incorporated diamond-like carbon (DLC) thin films at a preparation temperature of less than $200^{\circ}C$ was developed. Since DLC coating can be prepared not under vacuum but atmospheric conditions without any carrier gas flow, not only wafers but also powderic substrates can be used for DLC coating. Formation of DLC coating could result in appearance of superhydrophobic behaviors, which was sustained in a wide range of pH (1~14). DLC-coated surfaces selectively interacted with toluene in a toluene/water mixture. These results imply that our preparation method of the DLC coating can be useful in many application fields such as creating self-cleaning surfaces, and water and air purification filters.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1359-1360
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• 2006

lTO(Indium-Tin-Oxide) was used as anode material for OLED. Characteristics of ITO have great effect on efficiency of OLEDS(Organic light emitting diodes). ITO surface was treated by Nd:YAG laser in order to improve its chemical properties, wettability, adhesive property and to remove the surface contaminants while maintaining its original function. In this study, main purpose was to improve the efficiency of OLEDs by the ITO surface treatment: ITO surface was treated using a Nd:YAG(${\lambda}=266nm$, pulse) with a fixed power of 0.06[w] and various stage scanning velocities. Surface morphology of the ITO was investigated by AFM. Test OLEDs with surface treated ITO were fabricated by deposition of TPD (HTL), Ald3 (ETL/TML) and Al (cathode) thin films. Device performance of the OLEDs such as V-I-L was investigated using Source Measurement Unit (SMU: Keithly. Model 2400) and Luminance Measurement (TOPCON. BM-8).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.200-207
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• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.211-212
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• 2012

ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.