• 한국재료학회지
• /
• 제29권7호
• /
• pp.437-442
• /
• 2019

Green $BaSi_2O_2N_2:0.02Eu^{2+}$ phosphor is synthesized through a two-step solid state reaction method. The first firing is for crystallization, and the second firing is for reduction of $Eu^{3+}$ into $Eu^{2+}$ and growth of crystal grains. By thermal analysis, the three-time endothermic reaction is confirmed: pyrolysis reaction of $BaCO_3$ at $900^{\circ}C$ and phase transitions at $1,300^{\circ}C$ and $1,400^{\circ}C$. By structural analysis, it is confirmed that single phase [$BaSi_2O_2N_2$] is obtained with Cmcm space group of orthorhombic structure. After the first firing the morphology is rod-like type and, after the second firing, the morphology becomes round. Our phosphor shows a green emission with a peak position of 495 nm and a peak width of 32 nm due to the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ion. An LED package (chip size $5.6{\times}3.0mm$) is fabricated with a mixture of our green $BaSi_2O_2N_2$, and yellow $Y_3Al_5O_{12}$ and red $Sr_2Si_5N_8$ phosphors. The color rendering index (90) is higher than that of the mixture without our green phosphor (82), which indicates that this is an excellent green candidate for white LEDs with a deluxe color rendering index.

• 한국산학기술학회논문지
• /
• 제8권5호
• /
• pp.1013-1019
• /
• 2007

[ $150^{\circ}C$ ]의 저온에서 플라즈마 화학기상증착 (PECVD) 방법으로 비정질 규소 및 질화규소 박막을 성막 하였다. 비정질 질화규소 박막은 소스 가스의 수소 분율을 증가시킴에 따라 굴절률이 1.9에 접근하고 질소-수소 결합이 주도적이 되어 고온성막한 박막에 버금가는 특성을 보였다. 비정질 규소 박막은 소스 가스의 수소 분율을 높임에 따라 굴절률과 광학적 금지대역의 크기가 고온 성막된 박막의 값인 4.2와 1.8 eV에 근접한 값을 가지게 되었으며, $[Si-H]/([Si-H]+[Si-H_2])$의 값이 증가하여 양질의 박막특성을 얻을 수 있었다. RF 전력 및 증착 압력에 대해서 낮은 전력과 작은 압력에서 양질의 박막을 얻을 수 있었으며, 박막 특성은 RF 전력 보다는 증착 압력의 변화에 대해서 좀더 큰 의존성을 보였다. 박막트랜지스터 제작에 적용 가능한 양질의 비정질 규소 및 질화규소 박막을 저온에서 얻기 위해서는 소스 가스의 수소 분율을 높게 하는 것이 중요한 공통 인자로 파악되었다.

• The Journal of Korean Physical Therapy
• /
• 제14권4호
• /
• pp.119-130
• /
• 2002

The purpose of this study was to evaluate hemodynamics of intracranial blood flow for obtain clinically useful reference values and assess cerebral hemodynamics change with aging. 81 normal Korean subjects(age, 14$\thicksim\∼\thicksim$70 years) examined who han no history of neurologic disease and the subjects divided into group A(age, 14$\∼$39 years), group B(age, 40$\∼$59 years) and group C(age, 60$\∼$70 years). Transcranial doppler was use for measured the maximum velocity(Vmax), mean velocity(Vmean), pulsatility index(PI), resistive index(RI), stenosis index(SI) and depth of sample volume. Vmax was 99.1 1cm/s, Vmean was 63.57cm/s, PI was 0.85, RI was 0.56, SI was 31.94 and depth of sample volume was 52.35 in middle cerebral artery. Vmax was 85.54cm/s, Vmean was 52.52cm/s, PI was 0.82, RI was 0.55, SI was 34.48 and depth of sample volume was 73.62 in anterior cerebral artery. Vmax was 75.45cm/s, Vmean was 45.60cm/s, PI was 0.82, RI was 0.58, SI was 36.14 and depth of sample volume was 62.35 in posterior cerebral artery. Vmax was 70.44cm/s, Vmean was 47.07cm/s, PI was 0.87, RI was 0.58, SI was 29.83 and depth of sample volume was 75.23 in basilar artery Vmax was 63.92, Vmean was 42.42, PI was 0.89, RI was 0.58, SI was 29.89 and depth of sample volume was 66.65 in vertebral artery. Vmax and Vmean was significantly decreased with increasing age in middle cerebral artery, anterior cerebral artery, posterior cerebral artery, basilar artery and vertebral artery And PI and RI was significantly increased with increasing age in basilar artery and vertebral artery. And I suggest that transcranial doppler sonography can be used as one of useful clinical tool for detection of cerebral hemodynamics.

• 한국재료학회지
• /
• 제7권2호
• /
• pp.102-106
• /
• 1997

박막형 접촉연소식을 포함한 마이크로 가스센서에서 membrane은 Si식각시 식각정지용으로서 또 센서 소자를 지지하는 층으로서 응력이 없어야 하며 이는 응력이 membrane파괴의 주 원인으로 작용하기 때문이다. 이에 따라 본 연구에서는 증착조건이 low pressure chemical vapor deposition(LPCVD)법과 sputtering법으로 제작된 $SiN_{x}$과 $SiN_{x}/SiO_{x}/(NON)$막의 응력고 굴절율 변화에 미치는 효과에 대한 실험을 행하였다. LPCVD의 경우 단일막인 $SiN_{x}$의 압축응력 및 굴절율을 나타내었다. Sputtering의 경우 $SiN_{x}$는 공정압력이 1mtorr에서 30torr까지 증가할수록 인가전력밀도가 $2.74W/cm^2$에서 $1.10W/cm^2$으로 감소할수록 응력값은 압축에서 인장으로 전환되었으며 본 실험에서 응력이 가장 낮게 나온 시편의경우 압축응력으로 $1.2{\times}10^{9}dyne/cm^2$가 공정압력 10mtorr, 인가전력밀도 $1.37W/cm^2$에서 얻어졌다. 굴절율은 공정압력이 1motorr에서 30motorr까지 증가할수혹 인가전력밀도가 $2.74W/cm^2$에서 $1.10W/cm^2$으로 감소할수록 감소하여 2.05에서 1.89의 변화를 보였다. LPCVD와 sputtering으로 증착된 막들은 모두 온도가 증가함에 따라 응력이 감소하였으며 온도감소시 소성적인 특성을 나타내었다.

• Nuclear Engineering and Technology
• /
• 제51권5호
• /
• pp.1390-1397
• /
• 2019

SiC coating and SiC/glassy carbon composite coating were prepared on IG-110 nuclear graphite (Toyo Tanso Co., Ltd., Japan) to strengthen its inertness to molten fluoride salt used in molten salt reactor (MSR). Two kinds of modified graphite were obtained and correspondingly named as IG-110-1 and IG-110-2, which referred to modified IG-110 with a single SiC coating and a SiC/glassy carbon composite coating, respectively. Both structure and property of modified graphite were carefully researched and contrasted with virgin IG-110. Results indicated that modified graphite presented better comprehensive properties such as more compact structure and higher resistance to molten salt infiltration. With the protection of coatings, the infiltration amounts of fluoride salt into modified graphite were much less than that into virgin IG-110 at the same circumstance. Especially, the infiltration amount of fluoride salt into IG-110-2 under 5 atm was merely 0.26 wt%, which was much less than that into virgin IG-110 under 1.5 atm (13.5 wt%) and the critical index proposed for nuclear graphite used in MSR (0.5 wt%). The SiC/glassy carbon composite coating gave rise to highest resistance to molten salt infiltration into IG-110-2, and thus demonstrated it could be a promising protective coating for nuclear graphite used in MSR.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
• /
• pp.154-157
• /
• 2011

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

• 대한전자공학회논문지
• /
• 제27권5호
• /
• pp.709-715
• /
• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1999년도 하계종합학술대회 논문집
• /
• pp.926-929
• /
• 1999

In this paper, we have studied the role of sources gases, SiH$_4$, NH$_3$ and $N_2$, to produce Si-N and Si-H bond in PECVD. The correlations of a deposition rate, a refractive index and a permitivity were investigated with the NH$_3$ flow rate of 6, 9 and 12 sccm, and SiH$_4$ flow rate of 20, 30 and 40 sccm, and substrate temperature of 150, 250 and 35$0^{\circ}C$. But the $N_2$ flow rate and chamber pressure were fixed at 55 sccm and 700mTorr. And then MIM capacitors were fabricated and tested for MMIC applications.

• 태양에너지
• /
• 제6권1호
• /
• pp.12-23
• /
• 1986

The PECVD $SiN_x:H$ films were made from the $SiH_4-N_2$ gas mixtures under such deposition conditions as 0.01 to 1.0 of $SiH_4/N_2$ volume ratio, 0.1 to $0.8W/cm^2$ of RF power, and 100 to $400^{\circ}C$ of substrate temperature. The deposition rate, refractive index, hydrogen concentration, N/Si composition, optical gap and electric conductivity were measured, and the thermal stability and the optimum deposition conditions were investigated for the application of these films to the solar cell materials.

• Current Applied Physics
• /
• 제18권11호
• /
• pp.1436-1440
• /
• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).