• 한국세라믹학회지
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• 제30권6호
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• pp.492-498
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• 1993

The pretreatment condition for uniform distribution of SiC whisker in A2O3-SiCw composites has been determined and the mechanical properties of the composites with various whisker contents have been measured. Good dispersion of the whisker can be obtained in a solution of pH=10.45 by ball milling and ultrasonic treatment. The relative density of hot pressed composites decreases with the whisker content up to 40vol%, but is found to be satisfactory, over 98% for all samples. The mechanical property of the composites is sensitive to the whisker dispersion. Uniform distributjion of the whisker is critical in order to guarantee good mechanical property.The samples containing 20~30vol% whisker show the best mechanical property within the studied range.

• 동력기계공학회지
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• 제9권4호
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• pp.130-136
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• 2005

The effects of additional Mg content, the size and volume fraction of reinforcement phase on the mechanical properties of ceramic particle reinforced aluminium matrix composites fabricated by pressureless metal infiltration process were investigated. The hardness of $SiC_p/AC8A$ composites increased gradually with an increase in the additive Mg content, while the bending strength of $SiC_p/AC8A$ composites increased with an increase in additive Mg content up to 5%. However, this decreased when the level of additive Mg content was greater than 5% due to the formation of coarse precipitates by excessive Mg reaction and an increase in the porosity level. The hardness and strength of the composites increased with decreasing the size of SiC particle. It was found that the composites with smaller particles enhanced the interfacial bonding than those with bigger particles from fractography of the composites. The hardness of $Al_2O_{3p}/AC8A$ composites increased gradually with an increase in the volume fraction, however, the bending strength of $Al_2O_{3p}/AC8A$ composites decreased when the volume fraction of alumina particle was greater than 40% owing to the high porosity level.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.46-50
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• 2002

C-SiC films with different content of SiC on stainless steel substrate were prepared with ion beam mixing. It was found that hydrogen concentrations in C-SiC coatings was higher than that in stainless steel after H$\^$+/ ion implantation followed by thermal annealing. Infrared (IR) transmission measurement was used to study the mechanism of hydrogen retention by C-SiC films. The vibrational features in the range between 400 and 3200 cm$\^$-1/ in IR transmission spectra show the Si-CH$_3$, Si-CH$_2$, Si-H, CH$_2$and CH$_3$bonds, which are responsible for retaining hydrogen.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.22-26
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• 2013

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1099-1102
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• 2004

For the development of Pb-free low temperature sintering glass frits, $BaO-B_2O_3-SiO_2$ system was examined. The content of BaO and $B_2O_3$ was changed when the content of $SiO_2$ was fixed to 10 mol%. When the content of BaO was more than 60 mol% devitrification was observed. In the sintering temperature range between 520${\sim}$620 $^{\circ}C$, the optimum sintering temperature decreased as the content of BaO increased. When BaO ${\geq}$45 mol%, the glasses were crystallized after sintering. Candidate compositions are suggested in $BaO-B_2O_3-SiO_2$ system, which can replace the PbO containing glass system.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.68-73
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• 2000

The effects of oxygen annealing on the carbon content in MgO thin films were investigated, MgO thin films were deposited on Si(100) substrate at different temperatures of 400 to $700^{\circ}C$ and different deposition rates of 3.4 to 11.6$\AA$/min. Using rf magnetron sputtering method. Carbon content change on the surface of MgO thin films with the oxygen annealing at different temperatures was investigated using various method. The carbon content decreased as the annealing temperature increased. $Pb(Zr_{0.53}Ti_{0.47})O_3$(PZT) thin films were deposited on the MgO/Si(100) substrates. The effects of carbon content on the phase formation and the electrical properties of PZT thin films were also investigated.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.83.1-83.1
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• 2010

Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

• 한국세라믹학회지
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• 제37권4호
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• pp.368-375
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• 2000

Fracture toughness of particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC was analysed theoretically. According to the suggested particle bridging model for obtaining the R-curve height, the crack extension resistance for the long crack was linearly proportional to the residual calmping stress at the interface between the second phase and the matrix. It was also a function of the particle size and the content. It was confirmed that the rising R-curve behavior of Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ was owing to the strong crack bridging by SiC particles. For Al2O3/ZrO2/SiC composites, the tensional stress from the 3${\mu}{\textrm}{m}$ SiC particles was large enough to activate the spontaneous transformation of the ZrO2. The crack extension resistance due to the particle bridging mechanism did not seem to be affected much by the coupled toughening, but its resultant toughness increase could be significantly smaller due to the dependency on the matrix toughness.

• Composites Research
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• 제15권3호
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• pp.1-10
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• 2002

무가압함침법에 의해 제조된 SiCp/AC8A복합재료에 대하여 SiC 입자 크기와 부가적인 Mg의 첨가가 복합재료의 기계적 성질과 마모특성에 미치는 영향을 조사하였다. SiCp/AC8A복합재료의 경도와 굽힘강도는 입자의 크기가 작아짐에 따라 증가하였다. Mg 첨가량이 증가함에 따라 SiCP/AC8A복합재료의 경도는 경질의 반응생성물에 의해 상승하였으나 굽힘강도는 석출물의 조대화와 기공율의 증대에 의해 저하하였다. SiCp/AC8A복합재료는 AC8A 기지재에 비하여 고속의 마찰속도에서 6배의 내마모성을 나타냈으며 강화입자의 크기가 작아짐에 따라 내마모성은 향상되는 것으로 나타났다. 마모기구에 있어서 SiCp/AC8A복합재료는 마찰속도에 관계없이 연삭마모를 나타냈으나 AC8A 기지재는 마찰속도가 고속화됨에 따라 응착 및 용융마모의 마모면을 나타냈다.

• 한국세라믹학회지
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• 제47권6호
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• pp.560-565
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• 2010

Nano laminated bulk $Ti_3SiC_2$ was synthesized by hot press process using TiCx/Si powder mixture at the temperature range of $1300^{\circ}C\sim1500^{\circ}C$. pure $Ti_3SiC_2$ was synthesized by a hot pressing above $1400^{\circ}C$, while unreacted TiCx were remained in bulk $Ti_3SiC_2$ which synthesized below $1400^{\circ}C$. The sintering density of bulk $Ti_3SiC_2$ were varied with the amount of TiCx. It was found that the mechanical properties and micro structures of bulk $Ti_3SiC_2$ were closely related to the amounts of TiCx which was controlled by the hot pressing temperature. The TiCx increase the flexural strength of bulk $Ti_3SiC_2$, while the fracture toughness and thermal shock resistance of bulk $Ti_3SiC_2$ were decreased with the content of TiCx. The plastic deformations of bulk $Ti_3SiC_2$ were appeared above $1000^{\circ}C$.