• 제목/요약/키워드: SiC ceramic

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흑연 금형 표면 보호용 PCS 코팅층의 열경화에 의한 조성비 조절 특성 연구 (Study on the Compositional Characteristics of the PCS Coating Layer by Curing Treatment for the Protection of Graphite Mold Surface)

  • 김경호;이윤주;신윤지;정성민;이명현;배시영
    • 한국표면공학회지
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    • 제53권6호
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    • pp.293-299
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    • 2020
  • The characteristics of the polycarbosilane (PCS)-based composite ceramic layer was studied by controlling the curing temperature. The stress at the interface of the graphite and SiOC composite layer was evaluated v ia finite element analysis. As a result, the tensile stress was released as the carbon ratio of the SiC decreases. In experiment, the SiOC layers were coated on the VDR graphite block by dip-coating process. It was revealed that the composition of Si and C was effectively adjusted depending on the curing temperature. As the solution-based process is employed, the surface roughness was reduced for the appropriate PCS curing temperature. Hence, it is expected that the cured SiOC layer can be utilized to reduce cracking and peeling of SiC ceramic composites on graphite mold by improving the interfacial stress and surface roughness.

태양전지 산업(産業)에서 배출(排出)되는 Si waste로부터 SiC 분말 제조에 관한 연구(硏究) (A Study on the Preparation of SiC Nano powder from the Si Waste of Solar Cell Industry)

  • 장은진;김영희;이윤주;김수용;권우택
    • 자원리싸이클링
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    • 제19권5호
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    • pp.44-49
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    • 2010
  • 태양전지산업으로부터 배출되는 Si waste로부터 탄소환원법을 사용하여 SiC 분말을 제조하였다. 태양광 산업의 실리콘 웨이퍼 가공 공정에서 다량의 실리콘 및 오일 포함된 폐액이 발생한다. 환경과 경제적인 측면에서 폐액으로부터 실리콘 성분을 재회수하는 기술의 개발은 매우 중요하다. 본 연구에서는 폐 실리콘를 milling하여 나노화한 후 카본 블랙과 혼합하고 진공분위기에서 $1,350^{\circ}C$로 열처리하여 100 nm크기의 균일한 입도를 갖는 SiC 분말을 제조하였다. 폐실리콘과 생성물의 물리적 특성을 SEM, XRD, 입도분석 그리고 원자 흡수 분광기를 사용하여 분석하였다.

Fabrication of SiC Fiber-SiC Matrix Composites by Reaction Sintering

  • Lim, Kwang-Young;Kim, Young-Wook;Park, Ji-Yeon
    • 한국세라믹학회지
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    • 제45권4호
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    • pp.204-207
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    • 2008
  • This paper presents a new process for producing SiC fiber-SiC matrix(SiC/SiC) composites by reaction sintering. The processing strategy for the fabrication of the SiC/SiC composites involves the following: (1) infiltration of the SiC fiber fabric using a slurry consisting of Si and C precursors, (2) stacking the slurry-infiltrated SiC fiber fabric at room temperature, (3) cross-linking the stacked composites, (4) pyrolysis of the stacked composites, and (5) hot-pressing of the pyrolyzed composites. It was possible to obtain dense SiC/SiC composites with relative densities of >96% and a typical flexural strength of ${\sim}400$ MPa.

코디어라이트-SiC위스커 복합재료의 열팽창 특성 (Thermal Expansion Behavior of Cordierite-SiC Whisker Ceramic Composites)

  • 강대갑
    • 한국세라믹학회지
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    • 제24권5호
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    • pp.411-416
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    • 1987
  • Thermal expansions and thermal expansion coefficients of cordierite ceramics reinforced by SiC whiskers up to 40 vol. % were investigated. The composite specimens were hot pressed at 1523K for 30 min under 28.5 MPa pressing pressure in Ar atmosphere. Thermal expansions of the hot pressed composites were measured using a differential dilatometer up to 1262 K in air. Thermal expansions and thermal expansion coefficient of the composites increased with SiC whisker content. Thermal expansion behaviors of the composites were well explained by modelling parallel slabs randomly distributed on the whisker plane as the microstructural element of the composites.

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C3H8-SiCl4-H2 시스템에서의 탄화 실리콘 증착에 대한 열역학적인 해석 (Thermodynamic Prediction of SiC Deposition in C3H8-SiCl4-H2 System)

  • 김준우;정성민;김형태;김경자;이종흔;최균
    • 한국세라믹학회지
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    • 제48권3호
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    • pp.236-240
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    • 2011
  • In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we demonstrated the phase stability of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The ${\beta}$-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous ${\beta}$-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.

SiC/C 경사기능재료(FGM)의 합성을 위한 SiC/C 분율 조절 (The Control of SiC/C Ratio for the Synthesis of SiC/C Functionally Gradient Materials)

  • 김유택;최준태;최종건;오근호
    • 한국세라믹학회지
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    • 제32권6호
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    • pp.685-696
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    • 1995
  • The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4+SiCl4+H2 system was suitable for the deposition of SiC-rich layers, the C3H8+SiCl4+Ar system for the deposition of carbon-rich layers, and the C3H8+SiCl4+H2+Ar system was good to deposit the layers between them.

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고효율 세라믹 발열체 제작 및 특성 시험에 관한 연구 (A Study on the Fabrication and Characteristics of Ceramic Heater Apparatus with High Efficiency)

  • 조현섭;오명관
    • 한국산학기술학회논문지
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    • 제13권3호
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    • pp.1275-1278
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    • 2012
  • 도전성 복합체의 최적 설계 요소와 세라믹 제조기법을 찾고 발열체 제작을 위한 기초기반 기술을 확보하였다. 제품 응용시 세라믹 발열체를 하나의 몸체로 제작하여 접촉 저항을 최대한 줄이면 시스 발열체보다 1.1배 느린 초기 상승 온도 속도를 높일 수 있고, 보온력에서는 SiC계 세라믹 발열체가 시스 발열체보다 약 2.7배 높기 때문에 제품의 사용 기간이 길어질수록 에너지 절감 효과를 얻을 수 있어, 경제성 면에서 대단히 유리하게 평가 된다.

X-ray Diffraction Analysis of Residual Stress in Laminated Ceramic

  • Jin, Young-Ho;Chung, Dong-Yoon
    • 한국세라믹학회지
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    • 제48권5호
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    • pp.458-462
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    • 2011
  • The strength of ceramic was improved by lamination by suppressing the propagation of cracks with compressive residual stress in the face layer of the laminate. Hot pressed SiAlON+SiC/SiC/SiAlON+SiC laminate discs were fabricated for tailored residual stress. The residual stress in this laminate was studied by X-ray diffraction (XRD). There was considerable compressive residual stress in the face layer. A Finite Element Analysis (FEA) was performed to support the measured XRD results and to determine the stress field in the laminate. The residual stress measured by XRD had satisfactory agreement with the analytically calculated and FEA values. The measured value by XRD was -385 ${\pm}$ 20 MPa over most of the face layer. The calculated and FEA values were -386 MPa and -371MPa, respectively. FEA also showed significantly modified stresses and the maximum tensile stress near the edge region which are possible crack generators in the presence of flaws or contact damage.

희토류 산화물을 첨가한 일축가압소결 탄화규소의 기계적 특성 (Mechanical Properties of Hot-Pressed SiC with Rare-Earth Oxide)

  • 최철호;이충선;박광자;조덕호;김영욱
    • 한국세라믹학회지
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    • 제37권2호
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    • pp.158-163
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    • 2000
  • Six different SiC ceramics with SiO2-Re2O3 (Re=Yb, Er, Y, Dy, Gd, Sm) as sintering additives have been fabricated by hot-pressing the SiC-Re2Si2O7 compositions at 1850$^{\circ}C$ for 2 hr under a pressure of 25 MPa. The room temperature strneth and the fracture toughness of the hot-pressed ceramics were characterized and compared with those of the ceramics sintered with YAG (Y3Al5O12). Five SiC ceramics (Re=Yb, Er, Y, Dy, Gd) investigated herein showed sintered densities higher than 94% of theoretical. Tthe SiC-Re2Si2O7 compositions showed lower strength and comparable toughness to those from SiC-YAG composition, owing to the chemical reaction between SiO2 and SiC during sintering. SiC ceramics fabricated from a SiC-Y2Si2O7 composition showed the best mechanical properties of 490 MPa and 4.8 MPa$.$m1/2 among the compositions investigated herein.

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다공성실리콘 위의 탄화규소 박막의 증착 및 발광특성 (Deposition and Photoluminescence Characteristics of Silicon Carbide Thin Films on Porous Silicon)

  • 전희준;최두진;장수경;심은덕
    • 한국세라믹학회지
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    • 제35권5호
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    • pp.486-492
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    • 1998
  • Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

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