• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.5
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• pp.499-506
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• 2019

This paper is concerned with the operating stability of 7kW inverter using SIC hybrid module and verifies the validity of the simulation results by comparing the result of the loss equation and the simulation result, Simulation results using Si module and SiC hybrid module are compared to compare switch loss and diode loss. Through the loss equation calculation, the conduction loss of SiC Hybrid module is 168W, switching loss is 9.3W, diode loss is 10.5nW, When compared with the simulation results, similar values were shown. As a result of comparing the simulation results of the Si module and the SiC Hybrid module, The total device loss of the Si module was 246.2W, and the total device loss of the SiC Hybrid module was 189.9W. The loss difference was 56.3W, which was about 0.8W. thereby verifying the reverse recovery characteristics of the SiC SBD. In addition, temperature saturation test was conducted to confirm the stability of SiC Hybrid module and Si module under high temperature saturation, In the case of the Si module, the output power was stopped at 4kW, and the SiC Hybrid module was confirmed to operate at 7kW. Based on this, an efficiency graph and a temperature graph are presented, and the Si module is graphed up to 4kW and the SiC Hybrid module is graphed up to 7kW.

• Journal of IKEEE
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• v.22 no.4
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• pp.1202-1205
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• 2018

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.10-13
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• 2006

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.85-86
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• 2014

The paper presents a power supply of atmospheric-pressure plasma reactor based on SiC (Silicon Carbide) MOSFET resonant inverter. Thanks to the capacitive characteristic of capacitive coupling plasma reactor type, the LC series resonant inverter had been applied to take advantages of this topology with the implementation of SiC MOSFET power modules as switching power devices. Designation of gate driver for SiC MOSFET had been introduced by this paper. The 5kVp, 5kW power supply had also been verified by experimental results.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.188-189
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• 2017

There has been a growing demand for power semiconductor switches equipped with high-voltage blocking capability of kV range and fast-switching characteristics of ns range in various plasma application. This paper investigates the application of SiC MOSFETs in the particular plasma application which requires the blocking voltage of 4.5kV and the switching transient time of less than 100ns. In order to meet the required blocking voltage, the series connection of multiple SiC MOSFETs is adopted in this paper. Also, snubber capacitors are employed to equalize the voltage sharing among the series connected SiC MOSFETs. The simulation and experimental result successfully verifies the application of SiC MOSFETs and snubber capacitors in the plasma application requiring high-voltage and fast-switching load dynamics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.232-236
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• 2010

Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff's potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over $1,000^{\circ}C$. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to $1,250^{\circ}C$.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.193-194
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• 2014

This paper compares physical characteristic of MOSFET based on Si and SiC to achieve high efficiency in converters using MOSFETs which are typical switching elements. Also, it compares a result to compare operating efficiency when DC/DC converter is switching with each element.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.649-654
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• 2004

In this paper, the fracture toughness and mechanisms of failure in a random SiC-whisker/$Al_{2}O_3$ ceramic composite were investigated using in situ observations during mode I(opening) loading. $SiC_{w}/Al_{2}O_3$ composite was obtained by hot press sintering of $Al_{2}O_3$ powder and SiC whisker as the matrix and reinforcement, respectively. The whisker and powder were mixed using a turbo mill. The composite was produced at SiC whisker volume fraction of $0.3\%$. Compared with monolithic $Al_{2}O_3$, fracture toughness enhancement was observed in $SiC_{w}/Al_{2}O_3$ composite. This improved fracture toughness was attributed to SiC whisker bridging and crack deflection. $SiC_{w}/Al_{2}O_3$ composite exhibited typically brittle fracture behavior, but a fracture process zone was observed in this composite. This means that the load versus load-line displacement curve of $SiC_{w}/Al_{2}O_3$ composite from a fracture test may involve a small non-linear region near the peak load.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.546-552
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• 2010

The achievement of high gas permeability is a key factor in the development of porous SiC ceramics for applications of hot gas filter, vacuum chuck, and air spindle. However, few reports on the gas permeability of porous SiC ceramics can be found in the literature. In this paper, porous SiC ceramics were fabricated at temperatures ranging from $1600^{\circ}C$ to $1800^{\circ}C$ using the mixing powders of SiC, silicon, carbon and boron as starting materials. In some samples, expanded hollow microspheres as a pore former were used to make a cellular pore structure. It was possible to produce Si bonded SiC ceramics with porosities ranging from 42% to 55%. The maximum bending strength was 58MPa for the carbon content of 0.2 wt% and sintering temperature of $1700^{\circ}C$. The increase of air permeability was accelerated by addition of hollow microsphere as a pore former.