• Title/Summary/Keyword: SiC Paper

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Effcets of Initial Oxygen Concentration on Oxygen Pileup and the Diffusion of Impurities after High-energy Ion Impaltation (초기 산소 농도가 고에너지 이온 주입시 발생하는 산소 축적 및 불순물 확산에 미치는 영향)

  • 고봉균;곽계달
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.4
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    • pp.48-56
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    • 1999
  • In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

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Fabrication and Performance Evaluation of Thin Polysilicon Strain Gauge Bonded to Metal Cantilever Beam (금속 외팔보에 접착된 박막 실리콘 스트레인 게이지의 제작 및 성능 평가)

  • Kim, Yong-Dae;Kim, Young-Deok;Lee, Chul-Sub;Kwon, Se-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.4
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    • pp.391-398
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    • 2010
  • In this paper, we propose a sensor design by using a polysilicon strain gauge bonded to a metal diaphragm. The fabrication process of the thin polysilicon strain gauges having thicknesses of $50\;{\mu}m$ was established using conventional MEMS technologies; further, the technique of glass frit bonding of the polysilicon strain gauge to the stainless steel diaphragm was established. Performance of the polysilicon strain gauge bonded to the metal cantilever beam was evaluated. The gauge factor, temperature coefficient of resistance (TCR), nonlinearity, and hysteresis of the polysilicon strain gauge were measured. The results demonstrate that the resistance increases linearly with tensile stress, while it decreases with compressive stress. The value of the gauge factor, which represents the sensitivity of strain gauges, is 34.0; this value is about 7.15 times higher than the gauge factor of a metal-foil strain gauge. The resistance of the polysilicon strain gauge decreases linearly with an increase in the temperature, and TCR is $-328\;ppm/^{\circ}C$. Further, nonlinearity and hysteresis are 0.21 % FS and 0.17 % FS, respectively.

Vulnerability analysis on the ARMv7 Thumb Architecture (ARMv7 Thumb Architecture 취약성 분석)

  • Kim, Si-Wan;Seong, Ki-Taek
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.1003-1008
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    • 2017
  • The Internet of Things has attracted considerable research attention in recent years. In order for the new IoT technology to be widely used, the reliability and protection of information is required. IoT systems are very vulnerable to physical security due to their easy accessibility. Along with the development of SoC technology, many operating systems have been developed and many new operating systems have been introduced. In this paper, we describe the vulnerability analysis results for operating systems running on the ARMv7 Thumb Architecture hardware platform. For the recently introduced "Windows 10 IoT Core" operating system, I implemented the Zero-Day Attack by implanting the penetration code developed through the research into a specific IoT system. The virus detection test for the resulting penetration code was validated by referral to the "virustotal" site.

A Study on the Manufacture of WC MMCs by In-situ Reaction Process(1);The Formation Mechanism of Interfacial Reaction Layer in Cast-bonded Cast iron/W wire and Its Structure (기지내 반응법에 의한 WC 복합재료의 제조에 관한 연구(1);주조접합된 주철/텅스텐 와이어의 계면반응층 생성기구와 조직특성)

  • Park, Heung-Il;Kim, Chang-Up;Huh, Bo-Young;Lee, Sung-Youl;Kim, Chang-Gyu
    • Journal of Korea Foundry Society
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    • v.15 no.3
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    • pp.272-282
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    • 1995
  • Iron-based metal matrix composites have been recently investigated for the use of inexpensive abrasion resistance material. This paper carried out to investigate the in-situ reaction effects on the microstructural characteristics and the formation mechanism of tungsten carbides in a white cast iron matrix. The specimens of Fe-3.2%C-2.8%Si alloy cast-bonded with tungsten wire were cast in the metal mold and isothermally heat treated at $950^{\circ}C$ up to 48 hours. The typical microstructure of heat treated specimens showed the reaction layer of WC at the interface of tungsten wire and the carbon depletion zone between the WC layer and the matrix. During the formation of WC layer, if the carbon supply is insufficient due to the decarburization of matrix or the isolation of matrix by cast-bonded W wires, the reaction layer develops coarse hexagonal crystalline WC. From the microstructural investigation, it was found that the volume of WC layer and the carbon depletion zone increased linearly with the isothermal heat treating time. This results supported that the formation rate of WC in the white cast iron matrix is controlled by the interfacial reaction with a constant reaction rate.

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Physics-based Algorithm Implementation for Characterization of Gate-dielectric Engineered MOSFETs including Quantization Effects

  • Mangla, Tina;Sehgal, Amit;Saxena, Manoj;Haldar, Subhasis;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.159-167
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    • 2005
  • Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

The Latest Technology Development Trends of Flux Cored Wire (Flux Cored Wire의 최신 기술 개발 동향)

  • Im, Hee-Dae;Choi, Chang-Hyun;Jung, Jae-Heon;Kil, Woong
    • Journal of Welding and Joining
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    • v.34 no.6
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    • pp.1-10
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    • 2016
  • Flux Cored Wire is the most widely used welding material for Flux Cored Arc Welding these days. This paper introduces the technical aspects of manufacturing FCW and the development trend of FCW for each type of steel and metal. The studies are ongoing to lower the production cost of seamless-type FCW since it has not been generally used in welding shops so far because of it high cost even though the seamless-type FCW has various advantages than folded-type FCW in terms of manufacturing technology. Meanwhile, a technical research has been carried out to develop a rutile type of FCW products which satisfies high toughness after post heat treatment. In addition, for high-speed fillet welding, there has been a development of welding materials which can be welded in Single Auto-Carriage 100 cpm or more and up to Twin Tandem 200 cpm without occurring any welding defect in order to improve the welding productivity. As Zn coated steel is being used recently to improve the corrosion resistance of the automotive parts, a research and development for Metal Cored Wire has been conducted to reduce the Si island produced in welding operation than those produced when using the former solid wires. A development of welding material that guarantees CTOD performance beyond $-40^{\circ}C$ CTOD to $-60^{\circ}C$ is underway by different steel grades, and FCW for super austenitic stainless steel is being developed as the corrosion resistant steel has been upgraded.

Reformation of Legislation and System for Improving Seoul Metropolitan Railway Transfer Center and Connection Transportation Facility (수도권 광역철도역 환승센터 및 연계시설확충을 위한 법제도 개선방안)

  • Kim, Si Gon;Kim, Ji Yeon
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.37 no.1
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    • pp.119-124
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    • 2017
  • In this paper, 18 railway stations in Gyunggi-do are selected as metropolitan transfer centers out of 203 stations based on three elements. They are the number of passengers, the level of connection transport, and the level of relevant plans. For 18 stations the level of service (LOS) is analyzed for connection transport system. As a result, half of them are found to be below LOS "D". In order to maximize the use of those railway stations, a method is proposed to upgrade the level of service to "C" above. Finally, the improvement plans are suggested for two acts. In the Special Act on Metropolitan Traffic Management of the Metropolitan Region, the central government financial support ratio is suggested from 30% to 50%, from "necessary costs" to "total costs." In the Act on National Integrated Transport System Efficiency, 50% for connection road and 70% for connection raiway are suggested.

Microstructure and Magnetic Properties of Hexagonal Barium-Ferrite (BaM) Thin Films with Various Underlayers (여러 하지층을 첨가한 Hexagonal Barium-Ferrite(BaM) 박막의 미세구조와 자기적 특성)

  • 김동현;남인탁;흥양기
    • Journal of the Korean Magnetics Society
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    • v.11 no.3
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    • pp.122-128
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    • 2001
  • In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with various underlayers. Ba-ferrite thin films with various underlayers were deposited by reactive RF/DC magnetron sputtering system at room temperature. various underlayers was reactive sputtered with O$_2$. After deposition, the thin films were annealed at 850 $^{\circ}C$ to get the crystallized sample. Underlayers were used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by underlayers. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with various underlayers can be used as longitudinal recording media.

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FLIP CHIP ON ORGANIC BOARD TECHNOLOGY USING MODIFIED ANISOTROPIC CONDUCTIVE FILMS AND ELECTROLESS NICKEL/GOLD BUMP

  • Yim, Myung-Jin;Jeon, Young-Doo;Paik, Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.13-21
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    • 1999
  • Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

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Fundamental Characteristics of Activated Fly Ash-Slag Cement Exposed to 5℃ Seawater (5℃ 해수에 노출된 알칼리 활성 플라이애시-슬래그 시멘트의 기초 특성)

  • Kim, Taewan;Jun, Yubin
    • Journal of the Korean Recycled Construction Resources Institute
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    • v.7 no.4
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    • pp.302-309
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    • 2019
  • This paper shows an experimental study for fundamental characteristics of alkali activated fly ash-slag cement paste exposed to seawater of 5℃. Fly ash and slag were blended in three different ratios; 6:4, 7:3, and 8:2. Activators (NaOH and Na2SiO3) used 5% of the binder weight. It was shown that as the fly ash substitution rate in creased, compressive strength and density decreased, and water absorption rate increased. The results of X-ray diffraction and thermogravimetry showed that hydration reactants formed in samples did not differ significantly, however, C-S-H gel increased as the slag substitution rate increased. It showed that mechanical properties of fly ash-slag cement pastes under 5℃ seawater condition were affected by the slag substitution rate rather than fly ash.