• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• 동굴
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• 제79호
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• pp.77-81
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• 2007

In this paper deals with behavior of the magnetic abrasive using Sr-Ferrite on polishing charateristiccs in a internal finishing of staninless steel pipe a tying magnetic abrasive polishing. The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has in aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain SiC has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only SiC abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From MACRO analysis, we found that SiC abrasive and Sr-Ferrite were strongly bonding with each other.

• 대한치과의료관리학회지
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• 제11권1호
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• pp.38-46
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• 2023

Composite resins, commonly used in clinical practice, have been developed to improve aesthetics to obtain smooth surfaces. Although the restored composite resin has a smooth surface, it gradually becomes rough over time. Therefore, this study measured glossiness to evaluate the surface of various composite resins and attempted to evaluate the maintenance of glossiness of composite resins by observing surfaces that change to roughness. Specimens were produced using resin used in clinical practice: Gradia direct anterior (GA), Tetric N-Ceram (TN), Ceram.X Sphere TEC one (CX), Filtek Z350XT (FT), Estelite sigma quick (ES). After creating a smooth surface with slide glass, five locations were randomly selected to measure surface gloss, and the average was the representative value of the specimen. Roughness was applied to the specimen under water pouring at the same speed and pressure using SiC paper #2400, 1200, and 400. The gloss unit of different SiC papers was measured. To evaluate the gloss unit and gloss retention between composite resins, one-way analysis of variance and Tukey multiple comparisons test were used. As a result of the study, there was a difference in gloss unit of specimens produced under the same conditions. Although the degree differed depending on the composite resin, there was also a difference in gloss retention. Based on the findings, composite resins show differences in gloss due to their different characteristics. Ceram.X Sphere TEC one (CX) showing the lowest gloss retention and Estelite sigma quick (ES) showing the highest.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.897-897
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• 2005

We report QLA (Quenching-rate controlled Laser Annealing) system as new concept using pulsed DPSSL and CW lasers. This process can control temperature quenching-rate of poly-Si crystallization by additional CW laser and fabricate high quality poly-Si with faster scanning speed than conventional processes. In this paper, QLA system, the experimental results and theoretical discussion will be introduced.

• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.295-299
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• 2015

In this paper to improve the ionic conduction properties, lanthanum silicate apatite $La_{9.33}(SiO_4)_6O_2$ ceramic, which substituted by V ions at Si-site, were fabricated by the mixed-oxide method. And we investigated the structural and electrical properties of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens with variation of dopants for the application of solid oxide fuel cells. The sintering temperature of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens decreased from $1,600^{\circ}C$ to $1,400^{\circ}C$. As results of X-ray diffraction patterns, all $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens showed the formation of a complete solid solution in a apatite polycrystallin structure. But the specimens doped with more than 1.5mol% showed the second phase, $La_2SiO_5$ and $SiO_2$. The specimen dopants with 1.0 mol% showed the maximum ion conductivity. Ion conducting and activation energy of the $La_{9.33}(Si_5V_1)O_26$ specimens were about $7.8{\times}10^{-4}S/cm$ 1.62 eV at $600^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.48-51
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• 2004

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.393-396
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• 2005

This paper is concerned with the drawing process of $Al-1\%Si$ bonding wire. In this study, the finite-element model established in previous work was used to analyze the effect of various forming parameters, which included the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle in drawing processes. The finite-element results gave the consolidation condition. From the results of analysis, the effects of each forming parameter were determined. It is possible to obtain the Important basic data which can be guaranteed in the fracture prevention of $Al-1\%Si$ wire by using FE-Simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.