• Journal of the Korean Ceramic Society
• /
• v.37 no.9
• /
• pp.864-870
• /
• 2000

알루미나 단미의 기계적 성질을 향상시키고자, 185$0^{\circ}C$에서 1시간 동안 열간 가압소결에 의하여 SiC 입자 및 SiC 휘스커를 단독으로 혹은 동시에 첨가한 알루미나 복합재료를 제조하여 기계적 성질과 미세조직을 조사하였다. 20vol%의 SiC 입자 혹은 휘스커 첨가에 의하여, 알루미나 복합재료의 강도는 단미의 360 MPa에서 각각 640 MPa, 650 Mpa로 향상되었다. 20vol%의 SiC 입자 혹은 휘스커를 첨가한 복합재료의 파괴인성은 각각 3.5 MPa.m$^{1}$2/, 5.5 MPa.m$^{1}$2/를 나타내었다. 20vol%의 SiC 휘스커와 2vol%의 SiC 입자를 동시 첨가한 다중강화 복합재료의 강도와 파괴인성은 각각 790 MPa, 5.0 MPa.m$^{1}$2/ 로 증가하였다. 이와 같이 알루미나 단미에 비해 강도 및 파괴인성이 향상된 것은 입자에 의한 결정립 미세화 효과와 휘스커에 의한 균열편향, pull-out의 영향으로 생각된다.

• Journal of the Korean Ceramic Society
• /
• v.35 no.12
• /
• pp.1336-1336
• /
• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.83-83
• /
• 2010

산업이 고도화되는 과정에서 에너지의 고효율화를 위하여 고온, 고압 등의 극한환경 하의 공정이 불가결하며, 이에 따라 초미세분진인 나노 입자가 증가되고 있다. 이에 따라 해당 나노의 입자 처리를 위하여 다양한 용도에서의 고온 필터가 산업적으로 요구되고 있다. 본 연구에서는 디젤엔진 매연저감 후처리 장치, 소각로, 발전소 등의 미세 분진 포집 필터로서의 응용을 위해, 카본 파이버에 SiC 휘스커를 증착하는 실험을 진행하였다. 휘스커 증착 공정은 촉매없이 SiC 휘스커를 카본 파이버 위에 화학증착하였다. 휘스커 성장 시 증착 조건의 변화를 통하여 다양한 휘스커의 증착 형태 및 미세구조를 관찰하였다. 또한 높은 포집 효율 및 기체투과도를 갖추기 위해, 휘스커가 증착된 시편의 포집효율 및 기체투과도 향상을 위한 실험을 진행하였다. 해당 실험의 결과로, 증착된 필터는 70% 이상의 포집효율을 보이면서도 기체 투과도는 현재 상용화되어 있는 코디얼라이트보다 5배 이상 높았다. 또한 필터에 추가적인 SiC 침윤공정을 통하여 시편의 내산화성, 내마모성, 내열성 등의 특성이 향상됨을 확인하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.473-480
• /
• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.3
• /
• pp.67-71
• /
• 2003

Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.

• Resources Recycling
• /
• v.2 no.4
• /
• pp.17-22
• /
• 1993

SiC whiskers were synthesized from rice hulls and activated carbon by carbothermal reduction method. The effects of gases and various additives were studied. Carbothermal reduction to produce SiC whiskers was conducted at $1450^{\circ}C$ and the synthesized SiC whiskers were examined using SEM and XRD. The length of whiskers is increased with the increases of $H_2$concentration and total gas flows. The most favorable form of SiC whiskers couble be obtained in the following experimental conditins : Ar : $H_2$=300:45(ml/min), $SiO_2$(inrice hulls): $CaF_2$=1:0.5:0.5(mole ratio) and the addition of Ni flakes ($1{\times}1$mm).

• Journal of the Korean Ceramic Society
• /
• v.34 no.3
• /
• pp.296-302
• /
• 1997

The effect of cold cyclic compaction on densification of SiC whisker/Al2O3 composite was investigated. Re-lative density of the compact increased as the number of cycle and the compaction pressure increased and the bias pressure decreased. The rate of loading and unloading and the frequency of cold cyclic compaction did not affect much on sliding and rearrangement of the particles. Fracture of SiC whisker was hardly ob-served during cold cyclic compaction and the direction of whisker was randomly oriented throughout the compact regardless of the direction of compaction. Thus, cold cyclic compaction may be an efficient method to densify SiC whisker/Al2O3 composite.

• Journal of the Korean Ceramic Society
• /
• v.36 no.10
• /
• pp.1007-1015
• /
• 1999

The Si3N4 composites reinforced with carbon-coated SiC whiskers were fabricated by hot-pressing at 180$0^{\circ}C$ for 2 hours to examine the effects of carbon-coated whiskers on the mechanical properties of SiC whisker reinforced Si3N4 composites. The flexural strength of the Si3N4 composites and Si3N4 monolith respectively. The weak interfacial bond between carbon-coated SiC whiskers and Si3N4 matrix which enhances the crack deflection and whisker pull-out could contribute to the improvement of mechanical properties of the composites.

• Journal of the Korean Ceramic Society
• /
• v.36 no.1
• /
• pp.36-42
• /
• 1999

Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid(VS), two-stage growth(TS), and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction(XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e., the small diameter whiskers (<1 $\mu\textrm{m}$) grown by the VS, TS, and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers(>2$\mu\textrm{m}$) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers was probably due to the high specific lateral surface area of small diameter whiskers.

• Korean Journal of Materials Research
• /
• v.3 no.6
• /
• pp.606-613
• /
• 1993

This was studied about aging characteristic of AC4A/$SiC_{w}$ 10-30v/o reinforced composite. Aging hardenability was decreased $SiC_{w}$ 30% > 10% > 20%. Aging hardening of T6 treatmented composite was higher absolute value than AC4A I/M material. And this results indicated initial hardening phenomenon according to increase $SiC_{w}$ volume fraction. Reinforced effect by pressure was the same effect as before aging treatment and the best condition pressure at 75MPa. Similar to reinforced effect according to $SiC_{w}$ volume fraction was 30 % > 10 % > 20 %. In case of pressure is low, whisker is not break the same time press with base metal after wetting. After it is wetting with base metal, a part transformed or wetting part break and whisker maintain original shape or a part transformed on the otherhand, in case of pressure is high, whisker is break in same time it was not against pressure and whisker's shape is near a polygon or spherical shape.