• Title/Summary/Keyword: Si-Si coupling

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ASG(Amorphous Silicon TFT Gate driver circuit) Technology for Mobile TFT-LCD Panel

  • Jeon, Jin;Lee, Won-Kyu;Song, Jun-Ho;Kim, Hyung-Guel
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.395-398
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    • 2004
  • We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

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Dehydrogenative Polymerization of Hydrosilanes to Silicon Polymers

  • Kim, Myoung-Hee;Lee, Jun;Mo, Soo-Yong;Kim, Jong-Hyun;Woo, Hee-Gweon
    • Journal of Integrative Natural Science
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    • v.3 no.2
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    • pp.61-71
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    • 2010
  • Hydrosilanes possessing reactive Si-H bond are used in synthesizing various types of polysilanes by dehydrocoupling under the influence of various organometallic promoters. Catalytic Si-Si/Si-O coupling of hydrosilanes with hydrosilanes, alcohols, and lactones to silicon-based polymers are described in this article as selective examples of our recent research developments. These silicon-containing polymers can be used as a precursor to prepare useful functional materials for fabricating electronic devices.

ASG(Amorphous Silicon TFT Gate driver circuit)Technology for Mobile TFT-LCD Panel

  • Jeon, Jin;Lee, Won-Kyu;Song, Jun-Ho;Kim, Hyung-Guel
    • Journal of Information Display
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    • v.5 no.2
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    • pp.1-5
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    • 2004
  • We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

Preparation and Characterization of Sol-Gel Derived $SiO_2-TiO_2$ -PDMS Composite Films

  • Hwang, Jin Myeong;Yeo, Chang Seon;Kim, Yu Hang
    • Bulletin of the Korean Chemical Society
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    • v.22 no.12
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    • pp.1366-1370
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    • 2001
  • Thin films of the SiO2-TiO2-PDMS composite material have been prepared by the sol-gel dip coating method. Acid catalyzed solutions of tetraethoxy silane (TEOS) and polydimethyl siloxane (PDMS) mixed with titanium isopropoxide Ti(OiPr) were used as precursors. The optical and structural properties of the organically modified 70SiO2-30TiO2 composite films have been investigated with Fourier Transform Infrared Spectroscopy (FT-IR), UV-Visible Spectroscopy (UV-Vis), Differential Thermal Analysis (DTA) and prism coupling technique. The films coated on the soda-lime-silicate glass exhibit 450-750 nm thickness, 1.56-1.68 refractive index and 88-94% transmittance depending on the experimental parameters such as amount of PDMS, thermal treatment and heating rate. The optical loss of prepared composite film was measured to be about 0.34 dB/cm.

Enhancement of Dyeing Fastness of Artificial Suede (3) (인조스웨드의 견뢰도 향상에 관한 연구 (3))

  • Kim, Kyung Pil;Kim, Hea In
    • Textile Coloration and Finishing
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    • v.28 no.4
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    • pp.280-289
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    • 2016
  • Silica microgel was prepared by sol-gel process and then functional groups, epoxy group and ethoxy group, were introduced on the particle by coupling treatment with 3-glysidoxypropyltrimethoxysilane. The functional silica microgel(functional SiGel) formation was identified using FT-IR spectrometry. Phase stability for DMF solution of functional SiGel, PU resin and pigment was evaluated by Turbiscan Lab. And physical properties of artificial suede including hand values, morphology and dyeing fastness were investigated. The mean particle size and the specific surface area of the functional SiGel were $0.77{\mu}m$ and $380m^2/g$. Mixture containing the functional SiGel, PU resin and pigment was more stable than the functional SiGel-free mixed solution. Artificial suede prepared by the functional SiGel had appearance and feeling close to natural suede. The migration fastness, the solvent wicking fastness and rubbing fastness of the artificial suede were enhanced to 4~5 grades, 4~5 grades and 3~4 grades, respectively.

Numerical Study of Polarization-Dependent Emission Properties of Localized-Surface-Plasmon-Coupled Light Emitting Diodes with Ag/SiO2 Na

  • Moon, Seul-Ki;Yang, Jin-Kyu
    • Journal of the Optical Society of Korea
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    • v.18 no.5
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    • pp.582-588
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    • 2014
  • We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

Characterization of Silica/EVOH Hybrid Coating Materials Prepared by Sol-Gel Method

  • Kim, Seong-Woo
    • Journal of the Korean Applied Science and Technology
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    • v.26 no.3
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    • pp.288-296
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    • 2009
  • In this study, the silica-based hybrid material with high barrier property was prepared by incorporating ethylene-vinyl alcohol (EVOH) copolymer, which has been utilized as packaging materials due to its superior gas permeation resistance, during sol-gel process. In preparation of this EVOH/$SiO_2$ hybrid coating materials, the (3-glycidoxy-propyl)-trimethoxysilane (GPTMS) as a silane coupling agent was employed to promote interfacial adhesion between organic and inorganic phases. As confirmed from FT-IR analysis, the physical interaction between two phases was improved due to the increased hydrogen bonding, resulting in homogeneous microstructure with dispersion of nano-sized silica particles. However, depending on the range of content of added silane coupling agent (GPTMS), micro-phase separated microstructure in the hybrid could be observed due to insufficient interfacial attraction or possibility of polymerization reaction of epoxide ring in GPTMS. The oxygen barrier property of the mono-layer coated BOPP (biaxially oriented polypropylene) film was examined for the hybrids containing various GPTMS contents. Consequently, it is revealed that GPTMS should be used in an optimum level of content to produce the high barrier EVOH/$SiO_2$ hybrid material with an improved optical transparency and homogeneous phase morphology.

Si-MEMS package Having a Lossy Sub-mount for CPW MMICs (손실층 Sub-mount를 갖는 CPW MMIC용 실리콘 MEMS 패키지)

  • 송요탁;이해영
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.3
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    • pp.271-277
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    • 2004
  • A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.

Low-temperature polycrystalline silicon level shifter using capacitive coupling for low-power operation

  • Chung, Hoon-Ju;Sin, Yong-Won;Cho, Bong-Rae
    • Journal of Information Display
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    • v.11 no.1
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    • pp.21-23
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    • 2010
  • A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.

Magnetoresistance Properties in Synthetic CoFe/Ru/CoFe/FeMn Spin Valves with Different Pinned Layer Thicknesses (합성형 반강자성체인 CoFe/Ru/CoFe/FeMn에서 고정층의 두께 차이에 따른 스핀 밸브 구호의 자기저항 특성)

  • 김광윤
    • Journal of the Korean Magnetics Society
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    • v.11 no.5
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    • pp.211-216
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    • 2001
  • Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

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