• Title/Summary/Keyword: Si-Si coupling

Search Result 229, Processing Time 0.02 seconds

$NiFe/Co/Al_2O_3/Co/IrMn$ 접합의 터널링 자기저항효과

  • 홍성민;이한춘;김택기
    • Journal of the Korean Magnetics Society
    • /
    • v.9 no.6
    • /
    • pp.291-295
    • /
    • 1999
  • $NiFe/Co/Al_2O_3/Co/IrMn$ tunneling junctions were grown on (100)Si wafer and their spin-valve tunneling magnetoresistance (TMR) was studied. The tunneling junctions were grown by using a 5-gun RF/DC magnetron sputter. $Al_2O_3$ barrier layer was formed by exposing Al layer to oxygen atmosphere at 6$0^{\circ}C$ for 72 hours. Strong exchange coupling interaction is observed between the ferromagnetic Co and the antiferromagnetic IrMn of Co/IrMn bilayer when IrMn is 100$\AA$ thick. $NiFe(183\;{\AA})/Co(17\;{\AA})/Al_2O_3(16\;{\AA})/Co(100\;{\AA})/IrMn(100\;{\AA})$ tunneling junction shows best TMR ratio of about 10% in the applied magnetic field range of $\pm$20 Oe. The TMR ratio is improved about 23% and electrical resistance is decreased about 34% when annealed at 200 $^{\circ}C$ for 1 hour in magnetic field of 330 Oe, parallel to the bottom electrode. With increasing the active area of junction the TMR ratio increases while electrical resistance decreases.

  • PDF

Fabrication Technology of the Focusing Grating Coupler using Single-step Electron Beam Lithography

  • Kim, Tae-Youb;Kim, Yark-Yeon;Han, Gee-Pyeong;Paek, Mun-Cheol;Kim, Hae-Sung;Lim, Byeong-Ok;Kim, Sung-Chan;Shin, Dong-Hoon;Rhee, Jin-Koo
    • Transactions on Electrical and Electronic Materials
    • /
    • v.3 no.1
    • /
    • pp.30-37
    • /
    • 2002
  • A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

Covalent Coupling of ${\beta}-Fructofuranosidase$ on Microbial Cells (미생물 세포에 공유결합으로 고정화시킨 ${\beta}-Fructofuranosidase$에 관한 연구)

  • Uhm, Tai-Boong;Byun, Si-Myung
    • Korean Journal of Food Science and Technology
    • /
    • v.16 no.3
    • /
    • pp.267-272
    • /
    • 1984
  • ${\beta}-Fructofuranosidase$ was immobilized covalently on the oxidized microbial wall of a Penicillium spp. 'PS-8', which is totally different from the conventional whole cell immobilization in concept. The immobilization of ${\beta}-fructofuranosidase$ by a series of treatments; oxidation of microbial cells with sodium metaperiodate, enzyme loading on the oxidized cells, extrusion, and crosslinking induced by glutaradehyde, were carried out. The final product had a good mechanical strength and showed 26% of the applied enzyme activity. The specific activity was 750 units per g of the dry cell product. The immobilized enzyme showed the kinetic parameters as follows; optimum pH at 5, optimum temperature at $55^{\circ}C$, activation energy of 19 kJ $mol^{-1}$, and apparent Km of 55 mM.

  • PDF

Crack Damages in Exterior Wall Structures of Korean High-Rise Apartment Buildings Based on Nonlinear Finite Element Analysis (비선형 유한요소해석 기반 국내 고층아파트 외벽구조의 균열손상 특성 분석)

  • Kim, Sung Hyun;Mo, Sang Yeong;Kim, Si Hyun;Choi, Kyoung Kyu;Kang, Su Min
    • Journal of the Earthquake Engineering Society of Korea
    • /
    • v.28 no.1
    • /
    • pp.47-57
    • /
    • 2024
  • Recently, in newly constructed apartment buildings, the exterior wall structures have been characterized by thinness, having various openings, and a significantly low reinforcement ratio. In this study, a nonlinear finite element analysis was performed to investigate the crack damage characteristics of the exterior wall structure. The limited analysis models for a 10-story exterior wall were constructed based on the prototype apartment building, and nonlinear static analysis (push-over analysis) was performed. Based on the finite element (FE) analysis model, the parametric study was conducted to investigate the effects of various design parameters on the strength and crack width of the exterior walls. As the parameters, the vertical reinforcement ratio and horizontal reinforcement ratio of the wall, as well as the uniformly distributed longitudinal reinforcement ratio and shear reinforcement ratio of the connection beam, were addressed. The analysis results showed that the strength and deformation capacity of the prototype exterior walls were limited by the failure of the connection beam prior to the flexural yielding of the walls. Thus, the increase of wall reinforcement limitedly affected the failure modes, peak strengths, and crack damages. On the other hand, when the reinforcement ratio of the connection beams was increased, the peak strength was increased due to the increase in the load-carrying capacity of the connection beams. Further, the crack damage index decreased as the reinforcement ratio of the connection beam increased. In particular, it was more effective to increase the uniformly distributed longitudinal reinforcement ratio in the connection beams to decrease the crack damage of the coupling beams, regardless of the type of the prototype exterior walls.

A Study on the Sorption Behavior of U(VI) ion by Arsenazo I-XAD-2 Chelating Resin (Arsenazo I-XAD-2 킬레이트수지를 이용한 U(VI) 이온의 분리 및 농축에 관한 연구)

  • Lee, Chang-Hun;Lee, Si-Eun;Lim, Jae-Hee;Eom, Tae-Yoon;Kim, In-Whan;Kang, Chang-Hee;Lee, Won
    • Analytical Science and Technology
    • /
    • v.6 no.5
    • /
    • pp.489-499
    • /
    • 1993
  • Some sorption behaviors of U(VI) ion on Arsenazo I-XAD-2 chelating resin were investigated. This chelating resin was synthesized by the diazonium coupling of Amberlite XAD-2 resin with Arsenzo I chelating reagent and characterized by elementary analysis method and IR spectrometry. The optimum conditions for the sorption of U(VI) ion were examined with respect to pH, U(VI) ion concentration and shaking time. Total sorption capacity of this chelating resin on U(VI) ion was 0.39mmol U(VI)/g resin in the pH range of 4.0~4.5. This chelating resin was showed increased sorption capacity on the increased pH value. It was confirmed that sorption mechanism of U(VI) ion on the Arsenazo I-XAD-2 chelating resin was competition reacting between U(VI) ion and $H^+$ ion. Breakthrough volume and overall capacity of U(VI) ion measured by column were was 600 ml and 0.38 mmol U(VI)/g resin, respectively. The desorption of U(VI) ion was showed recovery of 90~96% using 3M $HNO_3$ and 3M $Na_2CO_3$ as a desorption solution. The separation and concentration of U(VI) ion from natural water and sea water was performed successfully by Arsenazo I-XAD-2 chelating resin.

  • PDF

Passive Alignment of Photodiode by using Visible Laser and Flip Chip Bonding (가시광 레이저를 이용한 수광소자의 수동정렬 및 플립칩본딩)

  • Yu, Chong-Hee;Lee, Sei-Hyoung;Lee, Jong-Jin;Lim, Kwon-Seob;Kang, Hyun-Seo
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.14 no.3
    • /
    • pp.7-13
    • /
    • 2007
  • In the optical module for optical communications, the flip chip bonding is used fer the precise alignment of the optical fiber and optical device. In flip chip bonding, the optical device is aligned and welded while observing the alignment mark of substrate and chip by using flip chip bonder in order to bond the optical device at the exact position. In this research, optical passive alignment method of photodiode(PD) flip chip bonding is suggested for low cost optical subassembly. By using the visible He-Ne laser (633nm wavelength), photodiode is easily aligned with emitting spot on the optical fiber with the help of stereoscopic alignment system. We compensated wavelength dependent deviation about 4m to find out real alignment position of 1550nm input laser by ray tracing. The maximum optical coupling efficiency between the optical fiber and photodiode was about 23.3%.

  • PDF

Swelling Ratio and Mechanical Properties of SBR/organoclay Nanocomposites according to the Mixing Temperature; using 3-Aminopropyltriethoxysilane as a Modifier and the Latex Method for Manufacturing (유기화제로 3-aminopropyltriethoxysilane 을 이용하여 라텍스법으로 제조된 SBR/organoclay 컴파운드의 혼련 온도에 따른 팽윤도 및 기계적 물성)

  • Kim, Wook-Soo;Park, Deuk-Joo;Kang, Yun-Hee;Ha, Ki-Ryong;Kim, Won-Ho
    • Elastomers and Composites
    • /
    • v.45 no.2
    • /
    • pp.112-121
    • /
    • 2010
  • In this study, styrene butadiene rubber(SBR)/organoclay nanocomposites were manufactured using the latex method with 3-aminopropyltriethoxysilane(APTES) as a modifier. The X-ray diffraction(XRD), transmission electron microscopy(TEM) images, Fourier transform infrared(FTIR) spectroscopy, swelling ratio and mechanical properties were measured in order to study the interaction between filler and rubber according to the mixing temperature in the internal mixer. In the case of SBR/APTES-MMT compounds, the dispersion of the silicates within the rubber matrix was enhanced, and thereby, the mechanical properties were improved. The characteristic bands of Si-O-C in APTES disappeared after hydrolysis reaction in the MMT-suspension solution and the peak of hydroxyl group was increased. Therefore the formation of chemical bonds between the hydroxyl group generated from APTES on the silicate surface and the ethoxy group of bis(triethoxysilylpropyl) tetrasulfide(TESPT) was possible. Consequently, the 300% modulus of SBR/APTES-MMT compounds was further improved in the case of using TESPT as a coupling agent. However, the silanization reaction between APTES and TESPT was not affected significantly according to the increase of mixing temperature in the internal mixer.

Potential Antitumor ${\alpha}$-methylene-${\gamma}$-butyrolactone-bearing nucleic acid bases. 2. synthesis of $5^I-Methyl-5^I$-[2-(5-substituted uracil-1-yl)ethyl]-$2^I-oxo-3^I$-methylenetetrahydrofurans

  • Kim, Jack-C.;Kim, Ji-A;Park, Jin-Il;Kim, Si-Hwan;Kim, Seon-Hee;Choi, Soon-Kyu;Park, Won-Woo
    • Archives of Pharmacal Research
    • /
    • v.20 no.3
    • /
    • pp.253-258
    • /
    • 1997
  • Ten, heretofore unreported, $ 5^I-methyl-5^I-[2-(5-substituted uracil-1-yl)ethyl)]-2^I-oxo-3^I$-methylenetetrahydrofurans (H, F, Cl, Br, I, $ CH_3$,$CF_3$,$CH_2CH_3$,$ CH=CH2$, SePh) (7a-j) were synthesized and evaluated against four cell lines (K-562, FM-3A, P-388 and U-937). For the preparation of ${\alpha}$-methylene-${\gamma}$-butyrolactone-linked to 5-substituted uracils (7a-j), the convenient Reformasky type reaction was employed which involves the treatment of ethyl ${\alpha}$-(bromomethyl)acrylate and zinc with the respective 1-(5-substituted uracil-1-yl)-3-butanone (6a-j). The 5-substituted uracil ketones (6a-j) were directly obtained by the respective Michael type reaction of vinyl methyl ketone with the $K_2CO_3$(or NaH)-treated 5-substituted uracils (5a-j) in the presence of acetic acid in the DMF solvent. The .alpha.-methylene-.gamma.-butyrolactone compounds showing the most significant antitumor activity are 7e, 7f, 7h and 7j (inhibitory concentration $(IC_50)$ ranging from 0.69 to $2.9 {\mu}g/ml$), while 7b, 7g and 7i have shown moderate to significant activity. The compounds 7a, 7c and 7d were found to be inactive. The synthetic intermediate compounds 6a-j were also screened and found marginal to moderate activity where compounds 6b and 6g showed significant activity $(IC_50:0.4~2.8 {\mu}g/ml)$.

  • PDF

A topological metal at the surface of an ultrathin BiSb alloy film

  • Hirahara, T.;Sakamoto, Y.;Saisyu, Y.;Miyazaki, H.;Kimura, S.;Okuda, T.;Matsuda, I.;Murakami, S.;Hasegawa, S.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.14-15
    • /
    • 2010
  • Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

  • PDF