• Journal of the Korean Chemical Society
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• v.43 no.6
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• pp.636-643
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• 1999

Green-emission intensity of a $Zn_{2-x}Mn_xSiO_4$ phosphor, which is a potential candidate as a green component in PDP device, significantly increases provided that the compound is additionally heat treated at 900$^{\circ}C$ after solid state reaction at 1300$^{\circ}C$. In order to verify origin of such an intensity enhancement after the additional heat treatment in association with the electronic and local structural change at around Mn ions, the Mn K-edge X-ray absorption spectra were recorded. From the analyses of the preedge peak corresponding to $1s{\rightarrow}3d$ bound state transition and XANES spectrum, it is known that most Mn ions are in +2 oxidation state and substitute Zn ion site regardless of the thermal treatment. In addition, EXAFS analyses revealed that Mn ions formed $MnO_4$ tetrahedra with the Mn-O bond length shortened by 0.01${\AA}$ and with reduced Debye-Waller factor in the thermally treated sample.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.28-28
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• 2003

고온가압소결(Hot Pressing) 된 다이아몬드 공구용 Co-Fe, Co-Ni계 금속본드의 상온 건식 미끄럼 마멸시험을 행하고, 조성에 따른 각 본드의 마멸 특성을 비교하고 마멸 기구를 규명하였다. 미끄럼 마멸시험은 pin-on-disk 형태의 마멸시험기를 사용하여 각 조성의 성분, 적용하중 그리고 마멸상대재를 변수로 상온, 대기 중에서 실시되었다. 마멸속도는 마멸시험 전후의 시편의 무게 감량을 이론밀도와 거리로 나누어 계산되었다. 마멸기구의 규명을 위하여 시험된 시편의 마멸면과 마멸단면을 SEM과 EDS를 이용하여 분석하였다. 시험 결과 Co-Fe system의 경우 그 마멸속도는 마멸상대재의 영향보다는 Fe 첨가에 따른 시편의 미세조직과 기계적 성질의 차이에 따라 크게 변화하였다. 그러나 Co-Ni system의 마멸속도는 마멸 상대재에 따라 크게 변화하는 것이 관찰되었다. $Al_2$O$_3$를 상대재로 마멸된 경우에는 마멸속도가 시편/상대재 접촉면에서 형성되는 산화층의 영향을 크게 받았고, glass bead(83% SiO$_2$)를 상대재로 한 경우에는 시편의 경도와 마멸속도는 서로 반비례하였다.

• Journal of the Korean Magnetic Resonance Society
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• v.9 no.1
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• pp.67-73
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• 2005

$^{27}AI$ triple quantum magic angle spinning (3QMAS) NMR spectra of several mordenite (MOR) sample were simulated with the point charge model method and compared with experimental 3QMAS spectra. Signal positions from different tetrahedral (T) sites in 3QMAS spectra are mainly governed by local structures of T sites such as T-O-T angles and T-O bond lengths. When preparation methods, cations in addition to Si/Al rations vary, the local structures of T sites in MOR change enough to alter signal patterns in 3QMAS of MOR. This inhibits to study the of Al distribution variation over 4 different T sites in mordenite during process such as dealumination by 3QMAS spectra.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.97-101
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• 2009

The use of a filler material in epoxy composite materials is an essential condition for reducing the unit cost of production and reinforcing mechanical strength. However, the dielectric strength of insulators decreases rapidly due to interactions between the epoxy resin and filler particles. In contrast to existing composite materials, nano-composite materials have superior dielectric strength, mechanical strength, and enduring chemical properties due to an increase in the bond strength of the polymer and nano material, It is reported that nano-fillers provide new characteristics different from the properties of the polymer material. This study is to improve the insulation capability of epoxy resins used in the insulation of a power transformer apparatus and many electronic devices mold. To accomplish this, the additional amount of nano-$SiO_2$ to epoxy resin was changed and the epoxy/$SiO_2$ nano composite materials were made, and the fundamental electrical properties were investigated using a physical properties and an analysis breakdown test. Using allowable breakdown probability, the optimum breakdown strength for designing an electrical apparatus was determined. The results found that the electrical characteristics of the nano-$SiO_2$ content specimens were superior to the virgin specimens. The 0.4 wt% specimens showed the highest electrical properties among the specimens examined with an allowable breakdown probability of 20 %, which indicates stable breakdown strength in insulating machinery design.

• Restorative Dentistry and Endodontics
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• v.46 no.4
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• pp.54.1-54.10
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• 2021

Objectives: The purpose of this study was to quantify phase transformation after hydrofluoric acid (HF) etching at various concentrations on the surface of yttria-stabilized tetragonal zirconia polycrystal (Y-TZP), and to evaluate changes in bonding strength before and after thermal cycling. Materials and Methods: A group whose Y-TZP surface was treated with tribochemical silica abrasion (TS) was used as the control. Y-TZP specimens from each experimental group were etched with 5%, 10%, 20%, and 40% HF solutions at room temperature for 10 minutes. First, to quantify the phase transformation, Y-TZP specimens (n = 5) treated with TS, 5%, 10%, 20% and 40% HF solutions were subjected to X-ray diffraction. Second, to evaluate the change in bond strength before and after thermal cycling, zirconia primer and MDP-containing resin cement were sequentially applied to the Y-TZP specimen. After 5,000 thermal cycles for half of the Y-TZP specimens, shear bond strength was measured for all experimental groups (n = 10). Results: The monoclinic phase content in the 40% HF-treated group was higher than that of the 5%, 10%, and 20% HF-treated groups, but lower than that of TS-treated group (p < 0.05). The 40% HF-treated group showed significantly higher bonding strength than the TS, 5%, and 10% HF-treated groups, even after thermal cycling (p < 0.05). Conclusions: Through this experiment, the group treated with SiO₂ containing air-borne abrasion on the Y-TZP surface showed higher phase transformation and higher reduction in bonding strength after thermal cycling compared to the group treated with high concentration HF.

• Elastomers and Composites
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• v.40 no.3
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• pp.196-203
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• 2005

In this work, the engine oil resistant evaluation and breakdown analysis of room temperature vulcanizing silicone adhesives were performed through the surface properties, thermal stabilities, adhesive strength, and morphology measurements. As a result, the permeation of engine oil into adhesive specimens was carried out from surface to center in the specimens. And the oil content in the adhesive specimens was increased and the Si-O-Si bond of the adhesives was decomposed with increasing the aging time. The TGA results indicated that the thermal degradation was mainly occurred at under and surfaces of the specimens. The tensile strength, elongation, and adhesive strength of the adhesives were significantly decreased after the engine oil resistant tests, which could be attributed to the initial lose of adhesive properties resulting from the engine oil absorption and thermal aging. And the failure mode of the adhesive specimens was changed from cohesive failure to interfacial failure.

• ETRI Journal
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• v.31 no.6
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Journal of the Korean GEO-environmental Society
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• v.13 no.6
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• pp.27-31
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• 2012

This study was designed to examine the feasibility of functionalized mesoporous silica as the adsorbent for benzene, toluene, ethylbenzene, and xylene isomers (BTEX) in groundwater. p-Xylene was used as the model compound of BTEX. A series of functionalized mesoporous silica with MCM-41 type of structure was synthesized using a co-condensation method. Monoamine, triamine, nitrile, phenyl, and octyl groups were functionalized to the mesoporous silica structure. Adsorption sites for p-Xylene in a functionalized mesoporous silica were Si-O-Si covalent bond, the surfactant, and the functional group. Octyl-functionalized mesoporous silica with stearyltrimethylammonium chloride as a surfactant showed the highest adsorption ability. The maximum xylene adsorption capacity of the octyl-functionalized mesoporous silica with stearyltrimethylammonium chloride based on Langmuir model was 4.17 mmol/g on $20^{\circ}C$, which was 2.9 times higher than that of MCM-41.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value