• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.189-189
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• 2011

CrZrN 박막은 CrN 박막에 비해서 향상된 기계적 특성과 우수한 표면 조도특성을 가지고 있다. 그러나 $500^{\circ}C$ 이상에서 기계적 특성이 급격히 감소하는 현상이 알려져 있다. 본 연구에서는 CrZrN 박막에 Si를 첨가하여 Si 함량에 따른 고온에서의 기계적 특성을 CrZrN 박막과 비교하였다. $500^{\circ}C$에서 마모 실험한 결과 CrZrN 박막에 비하여 소량의 Si의 첨가만으로 고온에서의 마모 특성이 향상되는 것을 확인하였다. 이것은 Si 첨가에 따라 고온에서 안정한 비정질상의 형성 영향으로 판단된다.

• Journal of the Korean Electrochemical Society
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• v.18 no.2
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• pp.68-74
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• 2015

To compare the microstructure and electrochemical properties between two binary alloys (Cr-Si, Ni-Si), two composition of binary alloys with the same capacity were selected using phase-diagram and prepared by matrix-stabilization method to suppress the volume expansion of Si by inactive-matrix. Master alloys were made by Arc-melting followed by fine structured ribbon sample preparation by Rapid Solidification Process (RSP, Melt-spinning method) under the same conditions. Also powder samples were produced by wet grinding for X-Ray Diffraction (XRD) and electrochemical measurements. As predicted from the phase diagram, only active-Si and inactive-matrix ($CrSi_2$, $NiSi_2$) were detected. The results of Scanning Electron Microscope (SEM) and Transmission Electron Microscopy - Energy Dispersive X-ray Spectroscopy (TEM-EDS) show that Cr-Si alloy has finer microstructure than Ni-Si alloy, which was also predictable through phase diagram. The electrochemical properties related to microstructure were evaluated by coin type full- and half-cells. Separately, self-designed test-cells were used to measure the volume expansion of Si during reaction. Volume expansion of Cr-Si alloy electrode with finer microstructure was suppressed significantly and improved in cycle capability, in comparison Ni-Si alloy with coarse microstructure. From these, we could infer the correlation of microstructure, volume expansion and electrochemical degradation and these properties might be predicted by phase diagram.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.69-75
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• 1997

Thin films of $Si0_2(1000{\AA})/CoNiCr(400{\AA})/Cr$ were fabricated as a function of Cr thickness by KF magnetron sputtering. The saturation magnetization, coercive force and squareness with annealing temperature for these films were investigated. The values of saturation magnetization of $SiO_2/CoNiCr/Cr$ thin films decreased as the thickness of Cr underlayer increased, whereas coercive force increased as the thickness of Cr underlayer increased. The value of Ms was 600 emu/cc and the maximum value of Hc was 550 Oe. Especially, the value of saturation magnetization was rapidly decreased $SiO_2/CoNiCr/Cr(1700{\AA})$ thin films as the annealing temperature increased And the coercive force increased as the annealing temperature increased When annealing temperature was $650^{\circ}C$, the Ms was reduced to 90 % of the as-deposited film. And the Hc was showed maximum 1600 Oe. It was thought that Cr diffusion into CoNiCr layer reduced the magnetic moment of CoKiCr layer. In addition. Hc might he increased due to grain growth perpendicular to the film plane.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.211-211
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• 2009

높은 이온화율과 복잡한 형상의 모재에도 표면 도포성 및 균일성을 나타내는 아크이온플래이팅 기술과 비전도성 세라믹 타겟물질에 적용가능한 스퍼터링 기술이 결합된 하이브리드 코팅 시스템(Hybrid coating system)을 이용하였다. 그리고 Cr-Al-N과 Cr-Si-N 코팅막의 강화 기구를 복합시킨 새로운 개념의 Cr-Al-Si-N 코팅막을 초경(WC-Co)시험편에 증착하여 Si 첨가량에 따른 미세구조의 미세경도 특성을 파악하였다. 공구성능 평가는 고속가공조건하에 마이크로 밀링기에서 무코팅(초경공구), Cr-Al-Si-N (Si : 0, 4.5, 8.7, 16 at.%) 코팅 마이크로엔드밀에 대하여 공구마멸에 대한 공구수명을 비교, 평가하였다.

• Corrosion Science and Technology
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• v.14 no.3
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• pp.127-131
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• 2015

Model alloys Fe-9Cr, Fe-20Cr and Fe-20Cr-20Ni (wt. %) with 0.1 and 0.2 % Si were exposed to $Ar-20CO_2-20H_2O$ gas at $818^{\circ}C$. The undoped alloys formed a thick iron-rich oxide scale. The additions of Si reduced scaling rates of Fe-9Cr to some extent but significantly suppressed the formation of iron oxide scales on Fe-20Cr and Fe-20Cr-20Ni. Carburisation also occurred in all undoped alloys, but not in Si-containing Fe-20Cr and Fe-20Cr-20Ni. Protection against carburisation was a result of the formation of an inner scale layer of silica.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.267-274
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• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.161-161
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• 2012

결정질 TiCrN과 AlSiN 나노층이 교대로 구성하는 나노 다층 TiAlCrSiN 박막은 음극 아크 플라즈마 증착법에 의해 증착되었다. 나노 다층 TiAlCrSiN 박막의 산화특성들은 $600{\sim}1000^{\circ}C$사이에서 대기 중 최대 70시간동안 연구 되었다. 형성된 산화물들은 주로 $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$ 그리고 rutile-$TiO_2$들로 구성되었다. 나노 다층 TiAlCrSiN 박막이 산화하는 동안, 가장 바깥쪽의 $TiO_2$층은 Ti 이온의 외부확산에 의해, 외부 $Al_2O_3$층은 Al이온의 외부확산에 의해 형성되었다. 동시에, 내부($Al_2O_3$, $Cr_2O_3$) 혼합층과 가장 안쪽의 $TiO_2$층은 산소이온의 내부확산에 의해 형성되었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.190-190
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• 2011

CrZrN 박막은 우수한 기계적 특성과 우수한 표면 조도특성을 가지고 있다. 본 연구에서는 CrZrN 박막에 Si를 첨가하여 CrZrN 박막의 부식 특성 향상을 알아보기 위하여 염수 분무 실험과 분극실험을 통하여 박막의 부식 특성을 평가하였다. Si의 함량이 증가함에 따라 부식 특성이 향상되는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta\theta_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 200Oe. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.