• Journal of Korea Foundry Society
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• v.27 no.3
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• pp.120-125
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• 2007

The microstructure, mechanical properties and melting range of Ni-Cr-Mo based alloys were investigated to develop Be-free Ni-Cr-Mo base dental alloys for Porcelain-Fused-to-Metal Firing(PFM). All as-cast alloys showed dendritic structure. Rockwell hardness of 20Cr7Mo was increased with addition of Si and Ti. On the contrary, it was decreased with addition of Co. The duplex alloying elemental addition such as 3Co + xTi, 2Si + xCo and 2Si + xTi to 20Cr7Mo resulted in much increase of hardness. Rockwell hardness and compressive strength for 20Cr3CoSiTi or 17Cr6CoSiTi alloy that add Si-Ti had similar values compared to the commercial alloys. Melting range for 20Cr3CoSiTi and 17Cr6CoSiTi alloy that add Si-Ti showed similar or lower than commercial alloys. In conclusion, 20Cr3CoSiTi and 17Cr6CoSiTi alloys can be applied for commercial use.

• Journal of the Korean institute of surface engineering
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• v.43 no.5
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• pp.238-242
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• 2010

In the present work, the influence of oxide on the Cr-Si-N coatings was investigated for the Cr-Si-O-N coatings on AISI 304 and Si wafer deposited by hybrid system, which combines the DC magnetron sputtering technique and arc ion plating (AIP) using Cr and Si target in an $Ar/N_2/O_2$ gaseous mixture. As the O content in the Cr-Si-N coatings increased, the diffraction patterns of the Cr-Si-O-N coatings showed CrN and $Cr_2O_3$ phases. However, as the O content increased to 28.8 at.%, diffraction peak of $Cr_2O_3$ was disappeared in the Cr-Si-O-N coating. The $d_{200}$ value was decreased with increasing of O content. The average grain size increased from about 40 nm to 65 nm as the O content increased. The maximum micro-hardness of the Cr-Si-O-N coating was obtained 4507 Hk at the O content of 24.8 at.%. The average friction coefficient of the Cr-Si-O-N coatings was gradually decreased by increasing the O content and the average friction coefficient decreased from 0.37 to 0.25 by increasing the O content. These results indicated that amorphous phase was increased in the Cr-Si-O-N coatings by increasing of O content.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.165-166
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• 2009

이 연구에서는 SUS304 기판과 Cr-Al-Si-N 코팅사이의 밀착특성을 향상시키기 위하여 하이브리드 증착법으로 Cr Interlayer를 기판위에 증착시킨 후 Cr-Al-Si-N 코팅을 증착하였다. 그리고 Ball-on-disk 마모테스트와 스크래치 테스트를 통해 밀착력, 파괴기구, 그리고 마찰거동 등을 살펴보았다. Cr-Al-Si-N 코팅에 60nm 두께의 Cr Interlayer 삽입되었을 때는 기판에 Cr-Al-Si-N 코팅만 증착되었을 때의 밀착력(${\sim}30N$) 보다 더 우수한 ${\sim}50N$의 밀착력을 나타내었고 내마모성 또한 향상되었다. 밀착력 증가는 Cr Interlayer 삽입에 따른 SUS304 기판과 Cr-Al-Si-N 코팅사이의 전단응력 감소에 기인한 것으로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.100-103
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• 2001

In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.113-113
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• 2018

환경 친화형 전기자동차, 하이브리드 자동차, 전철 등에서는 고내압 및 소형으로 전력손실을 감소시킬 수 있는 파워 디바이스가 필수이다. 최근, 실리콘 카바이드(SiC, silcon carbide)는 기존 실리콘(Si)보다 스위칭 손실의 저감 및 고온환경에서의 동작 특성이 우수하여, 차세대 저 손실 전력반도체 재료로서 기대를 받고 있다. 용액 성장 법에서 고품질 SiC 결정을 만들 수 있다. 그러나 늦은 성장 속도 때문에 SiC의 양산을 어렵게 하고 있다. 현재까지 성장 속도 향상을 위한 Si용매에 Cr을 첨가하여 탄소 용해도를 높이는 방법이 사용되고 안정된 성장을 위한 Si-Cr용매에 Al를 첨가하는 등 다양한 금속을 첨가하는 방법이 이용되고 있다. 선행 연구에서는 다양한 용매인 탄소 용해도를 실측하고 특히 큰 탄소 용해도를 보인 것은 Co이었다. 본 연구에서는 $Si_{0.6}Cr_{0.4}$원료와 Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매에 의한 SiC용액 성장을 실시하고 결정 성장 속도 및 표면 상태의 변화를 검토했다. on-axis 4H-SiC(000-1)을 사용한 Top-seeded solution growth(TSSG)법과 원자 비율로 $Si_{0.6}Cr_{0.4}$와 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매를 이용하여 SiC 용액 성장을 실시했다. Ar가스에서 저항 가열로 내를 치환 후에 $1800^{\circ}C$까지 가열하고 종자화 후에 120분간 유지하고 결정 성장을 실시했다. 냉각 후에 성장의 표면에 남은 용매를 $HF+HNO_3$에서 제거했다. 광학 현미경을 이용하여 결정면과 두께를 관찰 측정했다. Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 경우는 $Si_{0.6}Cr_{0.4}$의 경우보다 결정 성장 속도가 향상됐다. 또한 $Si_{0.6}Cr_{0.4}$보다 step-flow의 성장을 나타낸 결정의 표면이 전반적으로 관찰됐으며 안정된 결정성장을 나타냈다. 본 연구에서 실시한 연구 방법과 결과는 고품질 및 고속의 SiC 용액성장을 위한 매우 유용한 자료로 활용 될 수 있을 것으로 판단한다.

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.95-99
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• 2005

Quaternary Ti-Cr-Si-N coatings were synthesized onto steel substrates (SKD 11) using a hybrid method of arc ion plating (AIP) and sputtering techniques. For the Syntheses of Ti-Cr-Si-N coatings, the Ti-Cr-N coating process was performed substantially by a multi-cathodic AIP technique rising Cr and Ti targets, and Si was added by sputtering Si target during Ti-Cr-N deposition. In this work, comparative studies on microstructure and evaluation of mechanical properties between Ti-Cr-N and Ti-Cr-Si-N coatings were conducted. As the Si was incorporated into Ti-Cr-N coatings, the Ti-Cr-Si-N coatings showed largely increased hardness value of approximately 42 GPa than one of 28 GPa for Ti-Cr-N coatings. The average friction coefficient of Ti-Cr-N coatings largely decreased from 0.7 to 0.35 with increasing Si content up to 20 at. $\%$. In addition, wear behavior of Ti-Cr-N coatings against steel ball was much improved with Si addition due to the surface smoothening effect and tribe-chemical reaction.

• Korean Journal of Materials Research
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• v.31 no.5
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• pp.296-300
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• 2021

Al-Cr-Si ternary quench ribbons are fabricated using a single roll method and investigated for their structural and thermal properties. In particular, the sinterability is examined by pulse current sintering to obtain the following results. The Al₇₄Cr₂₀Si₆ composition becomes a quasicrystalline single phase; by reducing the amount of Cr, it becomes a two-phase mixed structure of Al phase and quasicrystalline phase. As a result of sintering of Al₇₄Cr₂₀Si₆, Al₇₇Cr₁₃Si₁₀ and Al₉₀Cr₆Si₄ compositions, the sintering density is increased with the large amount of Al phase; the sintering density is the highest in Al₉₀Cr₆Si₄ composition. In addition, as a result of investigating the effects of sintering temperature and pressurization on the sintered density of Al₉₀Cr₆Si₄, a sintered compact of 99% or more at 513 K and 500 MPa is produced. In particular, since the Al-Cr-Si ternary crystal is more thermally stable than the Al-Cr binary quaternary crystal, it is possible to increase the sintering temperature by about 100 K. Therefore, using an alloy of Al₉₀Cr₆Si₄ composition, a sintered compact having a sintered density of 99 % or more at 613 K and 250 MPa can be manufactured. It is possible to increase the sintering temperature by using the alloy system as a ternary system. As a result, it is possible to produce a sintered body with higher density than that possible using the binary system, and at half the pressure compared with the conventional Al-Cr binary system.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.489-492
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• 2000

Three different white cast irons alloyed with Cr and Si were prepared in order to study their distribution be-havior in matrices and carbides. The specimens were produced using a 15kg-capacity high frequency induction fur-nace. Melts were super-heated to $1600^{\circ}C$, and poured at $1550^{\circ}C$ into a pepset mold. Three combinations of the alloys were selected so as to observe the distribution behavior of Cr and Si : 0.5%C-25.0%Cr-1.0%Si(alloy No. 1), 0.5%C-5.0%Cr-1.0%Si(alloy No. 2) and 2.0%C-5.0%Cr-1.0%Si(alloy No. 3). Cellular $M_7C_3$ carbides-$\delta$ferrite eutectic were developed at $\delta$ferrite liquid interfaces in the alloy No. 1 while only traces of $M_7C_3$ carbides-$\delta$ferrite eutectic were precipitated in the alloy No. 2. With the addition of 2.0% C and 5.0% Cr, ledeburitic $M_3C$ carbides instead of cellular $M_7C_3$ carbides were precipitated in the alloy No. 3. Cr was distributed preferentially to the $M_7C_3$ carbides rather than to the matrix structure while more Si was partitioned in the matrix structure rather than the $M_7C_3$ carbides. $K^m$ for Cr was ranged from 0.56 to 0.68 while that for Si was from 1.12 to 1.28. $K^m$ for Cr had a lower value with increased carbon contents. The mass percent of Cr was higher in the $M_7C_3$ carbides with increased Cr contents.

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.100-105
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• 2005

Cr-Si-C-N coatings were deposited on steel substrate (SKD 11) by a hybrid system of arc ion plating (AIP) and sputtering techniques. From XRD, XPS, and HRTEM analyses, it was found that Cr-Si-C-N had a fine composite microstructure comprising nano-sized crystallites of Cr(C, N) well distributed in the amorphous phase of $Si_3N_4/SiC$ mixture. Microhardness of Cr(C, N) coatings and Cr-Si-N coatings were reported about $\~22 GPa$ and $\~35 GPa$, respectively. As the Si was incorporated into Cr(C, N) coatings, The Cr-Si-C-N coatings having a Si content of $9.2 at.\%$ showed the maximum hardness value. As increased beyond Si content of $9.2 at.\%$, the interaction between nanocrystallites and amorphous phase was gone, the hardness was reduced as dependent on amorphous phase of $Si_3N_4/SiC$. In addition, the average coefficient of Cr-Si-C-N coatings largely decreased compared with Cr(C, N) coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.