• Title/Summary/Keyword: Si-Cl-H

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Seasonal Variations of Chemical Composition of the Estuary Water in Guang Yang Inlet from Mar. 1961 to Feb. 1962 (蟾津江 河口 干潟地 水質의 年間變化)

  • Won, Chong-Hun
    • Journal of the Korean Chemical Society
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    • v.6 no.2
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    • pp.176-197
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    • 1962
  • Seasonal variations of chemical constituents of estuarine water at a definite station of the tidal flat in Guang Yang inlet have been determined for two days a month. The range and mean of the annual variations are as follows:Tidal variations through a year are as follows:1. Although the tidal value of pH is almost constant during one tidal cycle, it raises abruptly 0.1-0.2 intervals of pH value during the first period of flood.2. The lower values of chlorinity, magnesium and calcium contents have been determined the nearer the slack after ebb, and slightly higher during the first period of flood tide than the last of ebb. The tidal change of calcium contents is more remarkable than of magnesium.3. The higher per cent saturation values of dissolved oxygen, sometimes higher than 100 per cent, re determined the nearer the slack after ebb.4. The total nitrogen contents, relatively poor, varies accidentally during one tidal cycle, whereas phosphate-P and silicate-Si are rich at the slack after ebb and increase proportionally to the mixing percentage of fresh water. The average values, 52.2 and 18.5 of Si/P and N/P are greater than of the normal.5. The acid soluble iron contents, lower in winter than in summer, is also varies accidentally during one tidal cycle and the magnitude of the variation is large.6. The chemical composition considered from the value of Ca/Cl or Mg/Cl of estuarine water varies according to the chlorinity even at the high chlorinity of 18-19%.

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The Dry Etching Characteristics in Contact Process (접촉공정에서 건식각 특성)

  • Lee, Chang-Weon;Kim, Jae-Jeong;Kim, Dae-Su;Lee, Jong-Dae
    • Journal of the Korean Applied Science and Technology
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    • v.16 no.1
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    • pp.105-115
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    • 1999
  • P-type의 단결정 실리콘 위에 $1000{\AA}$의 열산화막을 성장시킨후 $5500{\AA}$의 다결정 실리콘으로 증착된 시료를 가지고 $HBr/Cl_2/He-O_2$ 혼합기체로 식각할 때 시료의 식각 특성에 관한 $H_2-O_2$ 기체함량. RF 전력, 압력에 대한 영향을 XPS(X-ray photoelectron Spectroscopy)와 SEM(Scanning Electron Microscopy)으로 조사하였다. $HBr/Cl_2/He-O_2$ 혼합기체로 식각되는 동안 형성된 다결정 실리콘 식각속도는 $H_2-O_2$ 함량 증가에 따라 증가하였으며 식각잔유물은 RF 전력과 압력변화에 의해 영향은 받지 않는 것으로 나타났으며, 다결정 실리콘 측벽에서의 증착속도는 낮은 RF전력과 높은 압력에서 높게 나타났다. 다결정 실리콘 식각 잔유물의 결합에너지는 안정한 $SiO_2$인 열산화막의 경우보다 높으므로 식각 잔유물은 $SiO_{\chi}({\chi}>2)$의 화합결합을 가지는 산화물과 같은 잔유물로 생각된다.

A Change of the Stream Water Quality by Forest Land Use (임지이용이 계류의 수질변화에 미치는 영향)

  • Ma, Ho-Seop;Goo, So-Young
    • Journal of the Korean Society of Environmental Restoration Technology
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    • v.5 no.6
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    • pp.43-48
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    • 2002
  • This study was carried out to clarify the change characteristics of stream water quality by land-use of forest from July to September, 2000 in three stands(Pinus densiflora, Castanea crenata (I), Castanea crenata (II) stand) of Jeongpyeong-ri, Jinju-si, Gyeongnam. The mean pH of rainfall results in acid rain of 5.3. The pH of stream water in three stands was high in order of Pinus densiflora (pH 6.59), Castanea crenata (II)(pH 6.53) and Castanea crenata (I) stand(pH 6.47). The electrical conductivity of stream water was high in order of Castanea crenata (I), Pinus densiflora and Castanea crenata (II) stand. Cations contents of three stands in stream water were high in order of $Ca^{2+}$, $Na^{2+}$, $Mg^{2+}$, $K^+$ and ${NH_4}^+$. But anions of stream water in Pinus densiflora stand and Castanea crenata (II) stand were high in order of ${SO_4}^{2-}$, $Cl^-$ and ${NO_3}^-$. In Castanea crenata (I) stand cations of stream water were high in order of ${NO_3}^-$, ${SO_4}^{2-}$ and $Cl^-$. The level of pH, ${NH_4}^+$, ${NO_3}^-$, $Cl^-$ and ${SO_4}^{2-}$ of stream water in Pinus densiflora stand and Castanea crenata (II) stand reached within the level of domestic use standard for drinking water But the level of ${NO_3}^-$ of stream water in Castanea crenata (I) stand was higher than that of domestic use standard. Therefore, non-point sources like forest watersheds which are fertilizer application lands should be taken to the appropriate mitigation measures.

Effects of Alloying Elements on the Pitting Behavior of Ti-Al Intermetallic Compounds (TiAl 금속간화헙물의 공식거동에 미치는 합금원소의 영향)

  • 이호종;최한철
    • Journal of the Korean institute of surface engineering
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    • v.31 no.3
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    • pp.157-164
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    • 1998
  • Effects of alloying elements on the pitting behavior of Ti-Al intermetalic compounds in the electrolytic soution containing Cl- were investigated through electrochemical tets and corrosion morphologies. Corrosion potential increased in the case of Cr addition to Ti-48%Al, whereas it decreased in the case of Si and B addition. The simultaneous addition of Cr and Si increased passive current density and decrosion corrosion potential. The passive current density of N addtion was higher than that of B addition in H2SO4 solution. With the addition of alloying elements, The pitting resistance decreased in order of TiAl>TiAlSi>TiAlN>TiAlB>TiAlCr and whin siumultaneous addition, it decreased in order of TiAlCrSi>TiAlCrBN>TiAlCrrN. The surface merohology after pitting test showed that the TiAl coataining Si had for fewer pits than that containing Cr and N simultaneously.

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Ab initio Nuclear Shielding Calculations for Some X-Substituted Silatranes Using Gauge-Including Atomic Orbitals

  • 김동희;이미정
    • Bulletin of the Korean Chemical Society
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    • v.18 no.9
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    • pp.981-985
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    • 1997
  • 13C, 15N, and 29Si NMR chemical shifts have been computed for selected X-substituted silatranes (X=Cl, F, H, CH3) using Gauge-Including Atomic Orbitals (GIAO) at the Hartree-Fock level of theory. The isotropic 13C chemical shifts are largely insensitive to substituent-induced structural changes. In this study, the isotropic 13C chemical shifts between 1-methyl- and 1-hydrogensilatranes by GIAO-SCF calculation at the HF/6-31G level are very similar. But the results of 1-chloro- and 1-fluorosilatranes are about 4 ppm different from the experimental values. In contrast, the isotropic 15N and 29Si chemical shifts and the chemical shielding tensors are quite sensitive to substituent-induced structural changes. These trends are consistent with those of the experiment. The isotropic 15N chemical shift demonstrates a very clear correlation with Si-N distance. But in case of 29Si the correlations are not as clean as for the 15N chemical shift; the calculated variation in the 29Si chemical shift is much larger.

Indium-free Sn based oxide thin-film transistors using a solution process

  • Im, Yu-Seung;Kim, Dong-Rim;Jeong, Ung-Hui;Kim, Si-Jun;Kim, Hyeon-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.251-251
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    • 2011
  • 본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

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Corrosion Resistance of Fe-Mn-Si-Ni-Cr-TiC Shape Memory Alloy for Reinforcement of Concrete (콘크리트 보강재용 Fe-Mn-Si-Ni-Cr-TiC계 형상기억합금의 내식성)

  • Joo, Jaehoon;Lee, Hyunjoon;Kim, Dohyoung;Lee, Wookjin;Lee, Junghoon
    • Journal of the Korean institute of surface engineering
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    • v.52 no.6
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    • pp.364-370
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    • 2019
  • Fe-Mn-Si-Ni-Cr-TiC alloys have a shape memory property, recovering initial shape by heating. With an aim to improve a durability and stability of building and infrastructure, this Fe-based shape memory alloy (FSMA) can be employed to reinforce concrete structure with creation of compressive residual stress. In this work, corrosion resistance of FSMA was compared with general rebar and S400 carbon steel to evaluate the stability in concrete environment. Potentiodynamic polarization test in de-ionized water, tap-water and 3.5 wt.% NaCl solution with variations of pH was used to compare the corrosion resistance. FSMA shows better corrosion resistance than rebar and S400 in tested solutions. However, Cl-containing solution is critical to significantly reduce the corrosion resistance of FSMA. Therefore, though FSMA can be a promising candidate to replace the rebar and S400 for the reinforcement of concrete structure, serious cautions are required in marine environments.

A Study on the Surface Modification of Graphite by CVD SiC -Growth Characteristics of SiC in a Horizontal CVD Reactor- (화학증착 탄화규소에 의한 흑연의 표면개질 연구 -수평형 화학증착반응관에서 탄화규소 성장특성-)

  • 김동주;최두진;김영욱;박상환
    • Journal of the Korean Ceramic Society
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    • v.32 no.4
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    • pp.419-428
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    • 1995
  • Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

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Effects of $SiO_2$ and Seed on Ba-ferrite Synthesized by Molten Salt (용융염법으로 합성한 Ba-ferrite의 $SiO_2$ 및 Seed 첨가 효과)

  • 김영근;이승관;김현식;오영우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.326-329
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    • 1996
  • In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

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중성자 반사 재료의 연구개발

  • Yu, In-Geun;Jo, Seung-Yeon;An, Mu-Yeong;Gu, Deok-Yeong;Park, Lee-Hyeon;Kim, Tae-Gyu;Yun, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.415-415
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    • 2011
  • 국제핵융합실험로(ITER)에 장착되는 한국형 헬륨 냉각 고체형 증식(Helium Cooled Solid Breeder : HCSB) 시험 블랑켓(Test Blanket Module : TBM)은 ITER 참여국 중 유일하게 중성자 반사 재료를 채택한 것이 특징이다. 중성자 반사재료로는 지름 1 mm 내외의 흑연 페블을 사용 할 예정이다. 흑연은 중성자 반사특성은 우수하지만 기계적 특성이 비교적 좋지 않다는 단점이있다. 뿐만 아니라, 산화나 화재 등에 대해서도 취약하기 때문에 흑연이 노출된 상태로 사용하는 것은 위험부담이 클 수밖에 없다. 따라서 흑연을 코팅해서 사용하기 위한 연구개발이 진행 중이며, 코팅 후보물질로는 저방사화 및 고경도의 특성을 갖는 SiC가 유력시 되고 있다. 흑연위에 SiC를 코팅하는 방법은 여러 가지가 있으며, 그 중에서 비교적 간단한 RF Sputtering, PECVD를 이용해서 SiC를 코팅하고 그 특성을 평가했다. RF Sputtering에서 흑연의 온도를 상온으로 두었을 때는 SiC가 결정으로 성장되지 않는 것을 확인할 수 있었으며, $900^{\circ}C$ 이상의 온도에서 열처리과정을 거친 후 결정이 형성되는 것을 확인할 수 있었다. 그리고 열처리 온도가 $1200^{\circ}C$ 부근에서는 SiC nano-wire가 형성되는 것을 확인할 수 있었다. PECVD의 경우 전구체 물질로 사용된 $SiH_4$$CH_4$의 비율에 따라서 SiC의 형성비율이 다른 것을 알 수 있었으며, 결정 상태는 성장시 기판온도에 크게 의존하는 것을 확인할 수 있었다. 최근에는 보다 효율적으로 SiC를 코팅하기 위하여 흑연페블을 spouting시키면서 코팅할 수 있는 CVD 장치를 설계-제작했으며, 전구체 물질로는 $SiH_4$, $Si(CH_3)_4$, $CH_3$ $SiCl_3$ 등이 사용될 예정이다.

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