• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.340-340
• /
• 2012

최근 MOS 소자들이 게이트 산화막을 Mono-layer가 아닌 Multi-Layer을 사용하는 추세이다. Bulk와 High-k물질간의 Dangling Bond를 줄이기 위해 Passivation 층을 만드는 것을 예로 들 수 있다. 이러한 Double Layer의 쓰임이 많아지면서 계면에서의 Interface State Density의 영향도 커지게 되면서 이를 측정하는 방법에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 $SiO_2$ Double Layer의 Interface State Density를 Conductance Method를 사용하여 구하는 연구를 진행하였다. Wet Oxidation과 Chemical Vapor Deposition (CVD) 공정을 이용하여 $SiO_2$ Double-layer로 증착한 후 Aluminium을 전극으로 하는 MOS-Cap 구조를 만들었다. 마지막 공정은 $450^{\circ}C$에서 30분 동안 Forming-Gas Annealing (FGA) 공정을 진행하였다. LCR meter를 이용하여 high frequency C-V를 측정한 후 North Carolina State University California Virtual Campus (NCSU CVC) 프로그램을 이용하여 Flatband Voltage를 구한 후에 Conductance Method를 측정하여 Dit를 측정하였다. 본 연구 결과 Double layer (Wet/CVD $SiO_2$)에 대해서 Conductance Method를 방법을 이용하여 Dit를 측정하는 것이 유효하다는 것을 확인 할 수 있었다. 본 실험은 앞으로 많이 쓰이고 측정될 Double layer (Wet/CVD $SiO_2$)에 대한 Interface State Density의 측정과 분석에 대한 방향을 제시하는데 도움이 될 것이라 판단된다.

• Electrical & Electronic Materials
• /
• v.16 no.9
• /
• pp.63.2-64
• /
• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.277-277
• /
• 2013

The epitaxial graphene on the 4H- or 6H-SiC(0001) surface has been intensively studied due to the possibility of wafer-scale growt. However the existence of interface layer (zero layer graphene) and its influence on the upper graphene layer have been considered as one of the main obstarcles for the industrial application. Among various methods tried to overcome the strong interaction with the substrate through the interface layer, it has been proved that the hydrogen intercalation successfully passivate the Si dangling bond of the substrate and can produce the quasi-free standing epitaxial graphene (QFEG) layers on the siC(0001) surface. In this study, we report the results of the angle-resolved photoemission spectroscopy (ARPES) and Raman spectroscopy for the QFEG layers produced by ex-situ and in-situ hydrogen intercalation.From the ARPES measurement, we confirmed that the Dirac points of QFEG layers exactly coincide with the Fermi level. The band structure of QFEG layer are sustainable upon thermal heating up to 1100 K and robust against the deposition of several metals andmolecular deposition. We also investigated the strain of the QFEG layers by using Raman spectroscopy measurement. From the change of the 2D peak position of graphene Raman spectrum, we found out that unlike the strong compressive strain in the normal epitaxial graphene on the SiC(0001) surface, the strain of the QFEG layer are significantly released and almost similar to that of the mechanically exfoliated graphene on the silicon oxide substrate. These results indicated that various ideas proposed for the ideal free-standing graphene can be tested based on the QFEG graphene layers grown on the SiC(0001) surface.

• Korean Journal of Materials Research
• /
• v.28 no.2
• /
• pp.118-123
• /
• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• The Journal of Advanced Prosthodontics
• /
• v.10 no.1
• /
• pp.43-49
• /
• 2018

PURPOSE. The purpose of this in vitro study is to examine the effects of a nano-structured alumina coating on the adhesion between resin cements and zirconia ceramics using a four-point bending test. MATERIALS AND METHODS. 100 pairs of zirconium bar specimens were prepared with dimensions of $25mm{\times}2mm{\times}5mm$ and cementation surfaces of $5mm{\times}2mm$. The samples were divided into 5 groups of 20 pairs each. The groups are as follows: Group I (C) - Control with no surface modification, Group II (APA) - airborne-particle-abrasion with $110{\mu}m$ high-purity aluminum oxide ($Al_2O_3$) particles, Group III (ROC) - airborne-particle-abrasion with $110{\mu}m$ silica modified aluminum oxide ($Al_2O_3+SiO_2$) particles, Group IV (TCS) - tribochemical silica coated with $Al_2O_3$ particles, and Group V (AlC) - nano alumina coating. The surface modifications were assessed on two samples selected from each group by atomic force microscopy and scanning electron microscopy. The samples were cemented with two different self-adhesive resin cements. The bending bond strength was evaluated by mechanical testing. RESULTS. According to the ANOVA results, surface treatments, different cement types, and their interactions were statistically significant (P<.05). The highest flexural bond strengths were obtained in nano-structured alumina coated zirconia surfaces (50.4 MPa) and the lowest values were obtained in the control group (12.00 MPa), both of which were cemented using a self-adhesive resin cement. CONCLUSION. The surface modifications tested in the current study affected the surface roughness and flexural bond strength of zirconia. The nano alumina coating method significantly increased the flexural bond strength of zirconia ceramics.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.1
• /
• pp.169-178
• /
• 1998

The crystal phases precipitated in various compositions glass of CaO-$SiO_2-P_2O_5$ system, were identified by XRD. E composition (CaO 49.4, $SiO_2\;36.8,\;P_2O_5$ 8.8 wt%) glass in which both apatite(($Ca_{10}(PO_4)_6O$ and $\beta$-wollastonite($CaSiO_3$) crystals would precipitate by heating, was selected as an experimental composition to prepare the glass ceramics with high bending strength and good bioactivity to the living bone. Glass powders of E composition were unidirectionally crystallized at $1050^{\circ}$C in the temperature-gadient furnace and the resultant glass ceramics were characterized. Bending strength of the glass ceramics was also measured. To investigate the bond forming ability between the glass ceramics and living bone tissue, soaking test of glass ceramics in simulated body fluid was carried out. Densed glass ceramics composed of apatite and $\beta$-wollastonite crystal were prepared by unidirectional crystallization under the optimum conditions. (2 0 2) plane of $\beta$-wollastonite crystals tended to grow perpendicularly to the crystallization direction. Average bending strength of this glass ceramics was 186.9 MPa, higher than that of the glass ceramics prepared by isothermal (not directional) crystallization In soaking test, a thin layer of apatite crystallite was formed on surface of the glass ceramics in 3 days. Apatite crystals formed on the glass ceramics could be act a role to make the chemical bond between the glass ceramics and living bone tissue.

• The Journal of Korean Academy of Prosthodontics
• /
• v.54 no.3
• /
• pp.193-202
• /
• 2016

Purpose: This study was performed in order to assess the effect of the surface treatment methods and the use of bonding agent on the shear bond strength (SBS) between the aged CAD-CAM (computer aided design-computer aided manufacturing) hybrid materials and added composite resin. Materials and methods: LAVA Ultimate (LU) and VITA ENAMIC (VE) specimens were age treated by submerging in a $37^{\circ}C$ water bath filled with artificial saliva (Xerova solution) for 30 days. The surface was ground with #220 SiC paper then the specimens were divided into 9 groups according to the combination of the surface treatment (no treatment, grinding, air abrasion with aluminum oxide, HF acid) and bonding agents (no bonding, Adper Single Bond 2, Single Bond Universal). Each group had 10 specimens. Specimens were repaired (added) using composite resin (Filtek Z250), then all the specimens were stored for 7 days in room temperature distilled water. SBS was measured and the fractured surfaces were observed with a scanning electron microscope (SEM). One-way ANOVA and Scheffe test were used for statistical analysis (${\alpha}=.05$). Results: Mostly groups with bonding agent treatment showed higher SBS than groups without bonding agent. Among the groups without bonding agent the groups with aluminum oxide treatment showed higher SBS. However there was no significant difference between groups except two subgroups within LU group, which revealed a significant increase of SBS when Single Bond Universal was used on the ground LU specimen. Conclusion: The use of bonding agent when repairing an aged LAVA Ultimate restoration is recommended.

• Korean Journal of Metals and Materials
• /
• v.50 no.6
• /
• pp.455-462
• /
• 2012

Al-Si coated boron steel and Zn coated DP steel plates were laser-welded to manufacture a Tailor Welded Blank (TWB) for a car body frame. Hot-stamping heat treatment ($900^{\circ}C$, 5 min) was applied to the TWB weld, and the microstructural change and transformation mechanism were investigated in the Al-rich area near the bond line of the Al-Si coated steel side. There was Al-rich area with a single phase, $Fe_3(Al,Si)$, which was transformed to ${\alpha}-Fe$ (Ferrite) after the heat treatment. It could be explained that the $Fe_3(Al,Si)$ phase was transformed to ${\alpha}-Fe$ during heat treatment at $900^{\circ}C$ for 5 min and the resultant ${\alpha}-Fe$ phase was not transformed by rapid cooling. Before the heat treatment, the microstructures around the $Fe_3(Al,Si)$ phase consisted of martensite, bainite and ${\alpha}-Fe$ while they were transformed to martensite and ${\delta}-Fe$ after the heat treatment. Due to the heat treatment, Al was diffused to the $Fe_3(Al,Si)$ and this resulted in an increase of Al content to 0.7 wt% around the Al-rich area. If the weld was held at $900^{\circ}C$ for 5 min it was transformed to a mixture of austenite (${\gamma}$) and ${\delta}-Fe$, and only ${\gamma}$ was transformed to the martensite by water cooling while the ${\delta}-Fe$ was remained unchanged.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.182-188
• /
• 2001

Thin films of $SiO_xC_y$ deposited by means of PECVD(plasma enhanced chemical vapor deposition) using HMDSO(hexamethyldisiloxane)/$O_2$ were characterized. The effects of deposition conditions such as RF power, oxygen flow rate and hydrogen flow rate on the chemical bond structure, atomic composition, surface roughness and wear characteristics of the films were investigated by means of FTIR, XPS, AFM and Hazemeter. The deposition rate of $SiO_xC_y$ was greater than 100 nm/min, which is relatively high rate. The XPS results showed that the carbon content in a deposited film was lower than that of previous studies where different organosilicone materials were used. The optimum wear resistance was attained when RF power was 200 Watt and oxygen flow rate was 100 sccm. This study implies that the $HMDSO/O_2$ system is effective in forming a film with a lower carbon content and good abrasion resistance.

• Korean Journal of Materials Research
• /
• v.10 no.9
• /
• pp.593-600
• /
• 2000

This paper investigated the conduction path and conduction mechanism in undoped polycrystalline diamond thin films deposited by microwave chemical vapor deposition. The resistances measured by ac impedance spectroscopy with different directions can not be explained by the previously-known surface conduction model. The electrodeposition of Cu and electroetching of Ag experiments showed that the conduction path is the grain boundaries within the diamond films. The electodeposition of Cu with an insulating surface layer further proved that the main conduction path in polycrystalline films in the grain boundaries. The film with high electrical conductivity has low activation energy of 45meV and higher dangling bond density. By considering the results and surface C chemical bonds, the H-C-C-H bonds at surface and in grain boundaries might be the origin of high conductivity in undoped diamond films.