• Journal of the Korean institute of surface engineering
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• v.54 no.2
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• pp.62-70
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• 2021

Al2024 aluminum alloy specimens were exposed to atmospheric conditions for maximum 24 months and analyzed by electron microscopes to characterize their corrosion behavior and oxide film characteristics. As the exposure time increased from 12 months to 24 months, the number of pitting sites per 1 mm² increased from ~100 to ~200. The uniform oxidation (or non-pitting) region of the 12-month exposure specimen showed 30~120 nm thick oxide layer, whereas the 24-month exposure specimen showed 170~200 nm thick oxide with the local oxygen penetration region up to 1 ㎛ deep. There was no local corrosion area observed in the 12-month exposure specimen except pitting. However, in the 24-month exposure specimen, local oxygen penetration region was observed beneath the uniform oxide layer and near the pitting cavity. Al2024 showed two times thicker uniform oxide layer but much shallower local oxygen penetration region than Al1050, which appears to be related to low Si concentration. Further research is needed on the effects of Mg segregation near the tip of the oxygen penetration region.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.11
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• pp.23-28
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• 2020

In general, lithography techniques are applied when machining single-crystal silicon in nanoscale applications; however, these techniques involve low degrees of freedom for the vertical shapes. By applying mechanical techniques to machine silicon, nanopatterns having various types of vertical shapes can be manufactured. In this study, we determined the ductile-brittle machining transition point and analyzed the- variation of the specific cutting resistance within the ductile machining region in nanoscale applications. When brittle fracture occurred during the nanoscale cutting, the depth of cut and cutting force increased and decreased rapidly, respectively. The first point of rapid increase in the depth of cut was defined as the ductile-brittle machining point. Subsequently, the shape of the machining tool was observed using a scanning electron microscope to calibrate the machining area, considering the tip blunting. The specific cutting resistance decreased continuously and converged to a certain value during the nanoscale cutting. The decrease and convergence in the value can be attributed to the decrease in the ratio of the arc length to the area of the machining tool and silicon.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.83-90
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• 1986

A micro pH-ISFET probe, which can be applied to the in vivo measurements of the hydrogen ion concentration in blood, has been developed, and a measuring system equiped with this probe also developed. The pH-ISFET has been fatricated by employing the techniques of integrated circuit fabrication. Two kinds of micro electrode formed around the sensing gate during the wafer process, and the other is a capillary type of Ag/AfCl/sat. KCI reduced in size. This capillary electrode has shown its good performance characteristics so far in the application with ISFET as well as a commercial one. In order to form a micro pH-ISFET probe, this pH-ISFET and well as a commercial one. In order to form a micro pH-ISFET probe, this pH-ISFET and the capillary electrode were built together into a needle tip having 1 mm inner diameter. The chip size of a twin pH-ISFET is 0.8 mmx1.4 mm, the material of the sensing gate membrane is Si3N4, and the sensitivity of the developed probe is about 52mV/pH.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.145-150
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• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Korean Journal of Environmental Agriculture
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• v.2 no.2
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• pp.98-102
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• 1983

The hydrogen fluoride gas generated from making the cement hardener injured the plants growing at the neighbour field. This investigation was conducted on sample analysis of hydrogen fluoride gas damage plants which included the ratios of destroyed leaves, damage symptoms, and nutrient elements in paddy rice and weeds. The results obtained were as follows; 1) The ratio of destroyed leaves at near HF source was very high reaching about 95% at 100m, 65% at 500m, 5% at 2㎞, respectively. 2) The necrosis was the characteristic symptom of fluoride injury on rice plant and occurred predominantly at the tip and margins of damage leaf. It developed along the tip and margins of leaves with a dull, gray-green, water soaked discoloration. 3) The fluorine content of tip and margins of damaged rice leaves were 1,600 ppm, 3 to 20 times higher than that of center part and it ranged from 130 to 242.5 ppm in weed leaves, but from 10 to 15 ppm in normal weed leaves. 4) The contents of calcium, potassium, silicon, iron and manganese were higher in tip and margins than in the center of rice damage leaves. 5) The Cocculus trilolous. D.C was the most resistant plant to HF gas than any other plant growing in this site, while wild berry and aralia tree belong to most sensitive plant group.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.44 no.1
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• pp.38-43
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• 1999

Over 2,000 ha of rice fields in the western and southern coastal region of Korea were flooded with sea water during the spring tide, on August 19-21, 1997, and the rice plant at heading stage was injured. The field surveys were undertaken at the sea water flooded paddy fields in Chonbuk Province, to identify the injury symptoms and rice yield damage subjected to different flooding condition and desalinization methods. Five days after sea water flooding at heading stage, the flag leaves of rice plants flooded with 30 ㎝ deep sea water withered from the tip, the withering progressed to the lower leaves in deeper flooding. The spikelets were spotted black and discolored from the tip at 50 ㎝ deep flooded rice, and some panicles changed to white at 80 ㎝ deep flooded rice. Most of the rice leaves submerged completely for an hour were withered and most of panicles changed to white. The milled rice yield, percentage of ripened grain, and 1000 grain weight of flooded rice decreased with deeper flooding water, higher water salinity and longer flooding time. Even under the same flooding conditions, the damage of rice yield varied with the growth stage: heading stage>dough stage>booting stage. Rice yield damage was less in the fields on the upper riverside than those of the fields on the estuary and seaside, because of lower water salinity. In a flooded field, the rice yield damages were reduced as the distance increased from the levees where the sea water inflowed and increased as the distance increased from the fresh water irrigation gate. The desalinization treatments consisting of frequent exchange of irrigation water and spraying with fresh water soon after flooding effectively reduced the rice yield damage.

• Korean Journal of Ichthyology
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• v.33 no.3
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• pp.167-176
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• 2021

This study was carried out to clarify the egg, larvae and juveniles development of Abbottina springeri. For the experiments, the matured adults were collected at the Seowon-cheon, Dangjin-si, Chungcheongnam-do, in Korea. The amount of spawning of female A. springeri was about 1,225~2,100 (1,662±437, n=10). The fertilized eggs were circular in shape and 1.05~1.13 (1.08±0.02, n=30) mm in diameter. The hatching time was required 72 hours to 80 hours after fertilization under water temperature of 22℃. The newly hatched larvae were 2.10~2.23 (2.16±0.04, n=10) mm in total length and had egg yolk in the abdomen but the mouth was not opened. At 5 days after hatching, the preflexion larvae were 3.19~3.30 (3.24±0.03, n=10) mm in total length and the most of yolk-sac was absorbed. At the 15 days after hatching, the flexion larvae were 4.97~5.30 (5.13±0.12, n=10) mm in total length and the tip of the caudal fin was began to bend upward. At the 25 days after hatching, the postflexion larvae were 8.97~9.60 (9.44±0.16, n=10) mm in total length and the tip of the caudal fin was bent at 45°. At the 35 days after hatching, the juvenile were 12.0~13.5 (12.7±0.53, n=10) mm in total length and all fin-rays (iii7 dorsal fin, iii6 anal fin, i7 ventral fins) were reached a constant number of each part.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• Clean Technology
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• v.11 no.2
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• pp.69-74
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• 2005

A metal ion detector with a submicron size electrode was fabricated by field-induced AFM oxidation. The square frame of the mesa pattern was functionalized by APTES for the metal ion detection, and the remaining portion was used as an electrode by the self-assembly of MPTMS for Au metal deposition. The conductance changed with the quantity of adsorbed copper ions, due to electron tunneling between the mobile and surface electrodes. The smaller electrode has a lower limit of detection due to the enhancement in electron tunneling through metal ions that are adsorbed between the conductive-tip (mobile) and the surface (fixed) electrode. This two-electrode system immobilized with different functional groups was successfully used in the selective adsorption and detection of target materials.