• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.57-58
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• 2008

Microcrystalline (${\mu}c$) silicon thin films were prepared on glass by plasma-enhanced-chemical-vapor-deposition (PECVD) at various substrate temperature, and dilution ratio of $H_2$ with $SiH_4$. The structural and optical properties of. the ${\mu}c-Si$ thin films were investigated using XRD and UV-VIS spectrophotometer. The ${\mu}c-Si$ thin film with 42 nm grain size was grown at optimal condition of 2.5 Torr, spacing between electrodes of 3cm, deposition time of 3000s, RF power of 200W, substrate temperature of $350^{\circ}C$, $SiH_4$ ($20%SiH_4$+80%He) of 50sccm, and $H_2$ of 100sccm.

• 태양에너지
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• 제11권1호
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• pp.41-49
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• 1991

본 연구에서는 기판의 증착온도를 $200{\pm}5[5^{\circ}C]$로 유지하여 진공증착법으로 (P)SiC/(N)Si 태양전지를 제작하고 그의 특성을 조사하였다. SiC 박막의 최적 두께 $1.2[{\mu}m]$는 박막두께와 변환효율과의 관계로부터 정해졌고 태양전지의 특성은 열치리에 의하여 개선되었다. 최적조건의 열처리 온도와 시간은 $420[^{\circ}C]$에서 12분이고 분광응답의 피크값은 열처리 온도의 증가와 더블어 장파장 쪽으로 이동함을 알았다. X선 회절분석 및 SEM검사는 열처리 온도와 시간에 따라 SiC 박막내에서 결정성장을 보여주며 $2.5{\times}1[cm^2]$의 태양전지에서 최고 변환효율은 11.7[%]이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 한국재료학회 춘계학술발표강연 및 논문개요집
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• pp.97-97
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.367-370
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• 2009

It is important to reduce a reflection of light as a solar cell is device that directly converts the energy of solar radiation to electrical energy in oder to improve efficiency of solar cells. The antireflection coating has proven effective in providing substantial increase in solar cell efficiency. This paper investigates the formation of thin film PSi(porous silicon) layer on the surface of crystalline silicon substrates without other ARC(antirefiection coating) layers. On the other hand the formation of $SO_{2}/SiN_x$ ARC layers on the surface of crystalline silicon substrates. After that, the structure of PSi and $SO_2/SiN_x$ ARC was investigated by SEM and reflectance. The formation of PSi layer and $SO_{2}/SiN_x$ ARC layers on the textured silicon wafer result about 5% in the wavelength region from 0.4 to $1.0{\mu}m$. It is achieved on the textured crystalline silicon solar cell that each efficiency is 14.43%, 16.01%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.309-309
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• 2010

We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.

• 한국재료학회지
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• 제30권5호
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.