• Biomolecules & Therapeutics
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• 제29권2호
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• pp.195-204
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• 2021

Cereblon (CRBN), a substrate receptor of cullin 4-RING E3 ligase (CRL4) regulates the ubiquitination and degradation of c-Jun, mediating the lipopolysaccharide-induced cellular response. However, the upstream signaling pathway that regulates this process is unknown. In this study, we describe how endoplasmic reticulum (ER) stress reversely regulates sequestosome-1 (p62)and c-Jun protein levels. Furthermore, our study reveals that expression of p62 attenuates c-Jun protein levels through the ubiquitinproteasome system. Conversely, siRNA knockdown of p62 elevates c-Jun protein levels. Immunoprecipitation and immunoblotting experiments demonstrate that p62 interacts with c-Jun and CRBN to form a ternary protein complex. Moreover, we find that CRBN knockdown completely abolishes the inhibitory effect of p62 on c-Jun. Using brefeldin A as an inducer of ER stress, we demonstrate that the p62/c-Jun axis participates in the regulation of ER stress-induced apoptosis, and that CRBN is required for this regulation. In summary, we have identified an upstream signaling pathway, which regulates p62-mediated c-Jun degradation. Our findings elucidate the underlying molecular mechanism by which p62/c-Jun axis regulates the ER stress-induced apoptosis, and provide a new molecular connection between ER stress and apoptosis.

• 한국재료학회지
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• 제31권12호
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• pp.665-671
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• 2021

A 1.8 ㎛ thick polycrystalline diamond (PCD) thin film layer is prepared on a Si(100) substrate using hot-filament chemical vapor deposition. Thereafter, its thermal conductivity is measured using the conventional laser flash analysis (LFA) method, a LaserPIT-M2 instrument, and the newly proposed light source thermal analysis (LSTA) method. The LSTA method measures the thermal conductivity of the prepared PCD thin film layer using an ultraviolet (UV) lamp with a wavelength of 395 nm as the heat source and a thermocouple installed at a specific distance. In addition, the microstructure and quality of the prepared PCD thin films are evaluated using an optical microscope, a field emission scanning electron microscope, and a micro-Raman spectroscope. The LFA, LaserPIT-M2, and LSTA determine the thermal conductivities of the PCD thin films, which are 1.7, 1430, and 213.43 W/(m·K), respectively, indicating that the LFA method and LaserPIT-M2 are prone to errors. Considering the grain size of PCD, we conclude that the LSTA method is the most reliable one for determining the thermal conductivity of the fabricated PCD thin film layers. Therefore, the proposed LSTA method presents significant potential for the accurate and reliable measurement of the thermal conductivity of PCD thin films.

• 센서학회지
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• 제30권6호
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• pp.446-450
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• 2021

Non-dispersive infrared (NDIR) gas sensors typically use an optical filter that transmits a discriminating 4.26 ㎛ wavelength band to measure carbon dioxide (CO2), as CO2 absorbs 4.26 ㎛ infrared. The filter performance depends on the transmittance and full width at half maximum (FWHM). This paper presents the fabrication, sensitivity, and selectivity characteristics of a distributed Bragg reflector (DBR)-based Fabry-Perot filter with a simple structure for CO2 detection. Each Ge and SiO2 films were prepared using the RF magnetron sputtering technique. The transmittance characteristics were measured using Fourier-transform infrared spectroscopy (FT-IR). The fabricated filter had a peak transmittance of 59.1% at 4.26 ㎛ and a FWHM of 158 nm. In addition, sensitivity and selectivity experiments were conducted by mounting the sapphire substrate and the fabricated filter on an NDIR CO2 sensor measurement system. When measuring the sensitivity, the concentration of CO2 was observed in the range of 0-10000 ppm, and the selectivity was measured for environmental gases of 1000 ppm. The fabricated filter showed lower sensitivity to CO2 but showed higher selectivity with other gases.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.626-630
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• 2022

A 100 mm × 50 mm-sized (100) gallium oxide (Ga₂O₃) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga₂O₃ ingot were compatible with a commercial Ga₂O₃ substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga₂O₃ crystals. In particular, we observed A_g(5) and A_g(10) peaks of Raman active mode, directly related to the impurity of the grown Ga₂O₃ crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga₂O₃ single crystal quality in the future.

• 농업생명과학연구
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• 제50권1호
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• pp.137-146
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• 2016

This experiment was designed to assess the physical and chemical properties of growing media substituted with a range of increasing concentrations of pretreated wood and to relate these properties to plant growth responses. For preparing the growing media, each material was combined with rural soil, peat, perlite and pretreated wood. Physicochemical properties studied were similar to ideal substrate ranges for plant growth on growing media, including pretreated wood. Physical properties were also well maintained over time. In comparison to plants growing in 100% rural soil, tall fescue(Festuca arundinacea) in the prepared growing media achieved better growth, especially when using the 50% rural soil + 50% PPW(peat + perlite + pretreated wood, 3:1:6(w/w/w)) and 30% rural soil + 70% PPW (peat + perlite + pretreated wood, 3:1:6(w/w/w)), and showed improved germination percentage. We confirmed the potential use of growing media, including pretreated wood. Furthermore, our results show a correlation among the physicochemical properties of tall fescue(Festuca arundinacea); physical properties were significantly influenced by germination and aerial parts. The root length of physicochemical properties was correlated with bulk density and organic compound (p<0.01).

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.397-404
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• 2009

Effects of ceramic filler types and dose on the low temperature sintering and dielectric properties of ceramic/$CaO-Al_2O_3-SiO_2$ (CAS) glass composites were investigated. All of the specimens were sintered at $850{\sim}900^{\circ}C$ for 2 h, which conditions are required by the low-temperature co-firing ceramic (LTCC) technology. Ceramic fillers of $CaCO_3$, $Al_2O_3$, $CaCO_3-Al_2O_3$ mixture, and $CaCO_3-Al_2O_3$ compound ($CaAl_2O_4$), respectively, were used. The addition of $Al_2O_3$ yielded the crystalline phase of alumina, which was associated with the inhibition of sintering, while, $CaCO_3$ resulted in no apparent crystalline phase but the swelling was significant. The additions of $CaCO_3-Al_2O_3$ mixture and $CaAl_2O_4$, respectively, yielded the crystalline phases of alumina and anorthite, and the sintering properties of both composites increased with the increase of filler addition and the sintering temperature. In addition, the $CaAl_2O_4$/CAS glass composite, sintered at $900^{\circ}C$, demonstrated good microwave dielectric properties. In overall, all the investigated fillers of 10 wt% addition, except $CaCO_3$, yielded reasonable sintering (relative density, over 93 %) and low dielectric constant (less than 5.5), demonstrating the feasibility of the investigated composites for the application of the LTCC substrate materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2000년도 춘계학술강연 및 발표대회 강연 및 발표논문 초록집
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• pp.9-10
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• 2000

An important business-field of world-wide steel-industry is the coating of thin metal-sheets with zinc, zinc-aluminum and aluminum based materials. These products mostly go into automotive industry. in particular for the car-body. into building and construction industry as well as household appliances. Due to mass-production, the processing is done in large continuously operating plants where the mostly cold-rolled metal-strip as the substrate is handled in coils up to 40 tons unwind before and rolled up again after passing the processing plant which includes cleaning, annealing, hot-dip galvanizing / aluminizing and chemical treatment. In the liquid Zn, Zn-AI, AI-Zn and AI-Si bathes a combined action of corrosion and wear under high temperature and high stress onto the transfer components (rolls) accounts for major economic losses. Most critical here are the bearing systems of these rolls operating in the liquid system. Rolls in liquid system can not be avoided as they are needed to transfer the steel-strip into and out of the crucible. Since several years, ceramic roller bearings are tested here [1.2], however, in particular due to uncontrollable Slag-impurities within the hot bath [3], slide bearings are still expected to be of a higher potential [4]. The today's state of the art is the application of slide bearings based on Stellite\ulcorneragainst Stellite which is in general a 50-60 wt% Co-matrix with incorporated Cr- and W-carbides and other composites. Indeed Stellite is used as the bearing-material as of it's chemical properties (does not go into solution), the physical properties in particular with poor lubricating properties are not satisfying at all. To increase the Sliding behavior in the bearing system, about 0.15-0.2 wt% of lead has been added into the hot-bath in the past. Due to environmental regulations. this had to be reduced dramatically_ This together with the heavily increasing production rates expressed by increased velocity of the substrate-steel-band up to 200 m/min and increased tractate power up to 10 tons in modern plants. leads to life times of the bearings of a few up to several days only. To improve this situation. the Mechanical Alloying (MA) TeChnique [5.6.7.8] is used to prOduce advanced Stellite-based bearing materials. A lubricating phase is introduced into Stellite-powder-material by MA, the composite-powder-particles are coated by High Energy Milling (HEM) in order to produce bearing-bushes of approximately 12 kg by Sintering, Liquid Phase Sintering (LPS) and Hot Isostatic Pressing (HIP). The chemical and physical behavior of samples as well as the bearing systems in the hot galvanizing / aluminizing plant are discussed. DependenCies like lubricant material and composite, LPS-binder and composite, particle shape and PM-route with respect to achievable density. (temperature--) shock-reSistibility and corrosive-wear behavior will be described. The materials are characterized by particle size analysis (laser diffraction), scanning electron microscopy and X-ray diffraction. corrosive-wear behavior is determined using a special cylinder-in-bush apparatus (CIBA) as well as field-test in real production condition. Part I of this work describes the initial testing phase where different sample materials are produced, characterized, consolidated and tested in the CIBA under a common AI-Zn-system. The results are discussed and the material-system for the large components to be produced for the field test in real production condition is decided. Outlook: Part II of this work will describe the field test in a hot-dip-galvanizing/aluminizing plant of the mechanically alloyed bearing bushes under aluminum-rich liquid metal. Alter testing, the bushes will be characterized and obtained results with respect to wear. expected lifetime, surface roughness and infiltration will be discussed. Part III of this project will describe a second initial testing phase where the won results of part 1+11 will be transferred to the AI-Si system. Part IV of this project will describe the field test in a hot-dip-aluminizing plant of the mechanically alloyed bearing bushes under aluminum liquid metal. After testing. the bushes will be characterized and obtained results with respect to wear. expected lifetime, surface roughness and infiltration will be discussed.

• 센서학회지
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• 제2권1호
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• pp.101-108
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• 1993

컬러센서를 위한 $TiO_{2}$/Se : Te 이종접합을 고주파 반응성 스퍼터링법과 진공증착법을 이용하여 제작하였다. 제조된 $TiO_{2}$ 막형성의 최적조건은 $1000{\AA}$의 $TiO_{2}$ 두께에서 고주파전력 120 W, 기판온도 $100^{\circ}C$, 산소농도 50% 및 분위기압 50 mTorr였다. 이 때 광투과율은 파장 550 nm에서 85%, 저항률은 $2{\times}10^9{\Omega}{\cdot}cm$, 굴절률은 2.3이었다. 제조된 $TiO_{2}$막은 직접천이형 에너지 밴드구조를 가지며 광학적 밴드갭은 3.58 eV였다. 제조된$TiO_{2}$막을 $400^{\circ}C$에서 30분간 열처리함으로써 광투과율이 파장 $300{\sim}580$ nm범위에서 $0{\sim}25%$까지 개선되었다. 또한 화학양론적 조성비를 조사하기 위하여 AES 분석을 한 결과 Ti 및 0의 조성비는 1 : 1.7로 나타났다. 한편 Se : Te 막형성의 최적조건은 $190^{\circ}C$에서 1분간 열처리했을 때였다. 이러한 조건으로 제조된 Se : Te막의 광학적 밴드갭은 1.7 eV였으며 육방정계구조의 (100) 방향 및 (110) 방향으로 Se : Te 막이 결정화됨을 알 수 있었다. 1000 lux의 조도에서 Se : Te막의 광전변환률은 0.75였다. 또한 Se에 Te를 첨가함으로써 장파장영역의 분광감도가 향상되었다. $TiO_{2}$/Se : Te 이종접합의 분광감도는 가시광 전영역에서 비교적 넓은 분광감도를 나타내었으며, 특히 청색영역에서 a-Si박막보다 우수한 분광감도를 나타내었다.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.83-89
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• 2020

지난 수십년간 인류에게 핵심적인 에너지 자원이었던 화석연료가 갈수록 고갈되고 있고, 산업발전에 따른 오염이 심해지고 있는 환경을 보호하기 위한 노력의 일환으로, 친환경 이차전지, 수소발생 에너지 장치, 에너지 저장 시스템 등과 관련한 새로운 에너지 기술들이 개발되고 있다. 그 중에서도 리튬이온 배터리 (Lithium ion battery, LIB)는 높은 에너지 밀도와 긴 수명으로 인해, 대용량 배터리로 응용하기에 적합하고 산업적 응용이 가능한 차세대 에너지 장치로 여겨진다. 하지만, 친환경 전기 자동차, 드론 등 증가하는 배터리 시장을 고려할 때, 수명이 다한 이유로 어느 순간부터 많은 양의 배터리 폐기물이 쏟아져 나올 것으로 예상된다. 이를 대비하기 위해, 폐전지에서 리튬 및 각종 유가금속을 회수하는 공정개발이 요구되는 동시에, 이를 재활용할 수 있는 방안이 사회적으로 요구된다. 본 연구에서는, 폐전지의 재활용 전략소재 중 하나인, 리튬이온 배터리의 대표적 양극 소재 Li2CO3의 나노스케일 패턴 제조 방법을 소개하고자 한다. 우선, Li2CO3 분말을 진공 내 가압하여 성형하고, 고온 소결을 통하여 매우 순수한 Li2CO3 박막 증착용 3인치 스퍼터 타겟을 성공적으로 제작하였다. 해당 타겟을 스퍼터 장비에 장착하여, 나노 패턴전사 프린팅 공정을 이용하여 250 nm 선 폭을 갖는, 매우 잘 정렬된 Li2CO3 라인 패턴을 SiO2/Si 기판 위에 성공적으로 형성할 수 있었다. 뿐만 아니라, 패턴전사 프린팅 공정을 기반으로, 금속, 유리, 유연 고분자 기판, 그리고 굴곡진 고글의 표면에까지 Li2CO3 라인 패턴을 성공적으로 형성하였다. 해당 결과물은 향후, 배터리 소자에 사용되는 다양한 기능성 소재의 박막화에 응용될 것으로 기대되고, 특히 다양한 기판 위에서의 리튬이온 배터리 소자의 성능 향상에 도움이 될 것으로 기대된다.