• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.227.1-227
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• 2003

• Korean Journal of Materials Research
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• v.31 no.6
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• pp.313-319
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• 2021

Understanding of effects of changes in the particle size of the matrix material on the mullite whisker growth during the production of porous mullite is crucial for better design of new porous ceramics materials in different applications. Commercially, raw materials such as Al₂O₃/SiO₂ and Al(OH)₃/SiO₂ are used as starting materials, while AlF₃ is added to fabricate porous mullite through reaction sintering process. When Al₂O₃ is used as a starting material, a porous microstructure can be identified, but a more developed needle shaped microstructure is identified in the specimen using Al(OH)₃, which has excellent reactivity. The specimen using Al₂O₃/SiO₂ composite powder does not undergo mulliteization even at 1,400 ℃, but the specimen using the Al(OH)₃/SiO₂ composite powder had already formed complete mullite whiskers from the particle size specimen milled for 3 h at 1,100 ℃. As a result, the change in sintering temperature does not significantly affect formation of microstructures. As the particle size of the matrix materials, Al₂O₃ and Al(OH)₃, decreases, the porosity tends to decrease. In the case of the Al(OH)₃/SiO₂ composite powder, the highest porosity obtained is 75 % when the particle size passes through a milling time of 3 h. The smaller the particle size of Al(OH)₃ is and the more the long/short ratio of the mullite whisker phase decreases, the higher the density becomes.

• Journal of Industrial Technology
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• v.26 no.B
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• pp.173-181
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• 2006

We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1307-1314
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• 1994

The aim of this work is to show the way of manufacturing the SiC mechanical seal at the low temperature of 130$0^{\circ}C$ using clay and frit as source of secondary phase. $\alpha$-SiC and $\beta$-SiC powder which showed different distribution of particle were used as starting materials, i.e. average particle size of $\alpha$-SiC was larger than that of $\beta$-SiC. The mechanical and tribological properties of two groups of specimen, i.e. one contained mainly larger $\alpha$-SiC powder and the other mainly fine particle $\beta$-SiC, were measured. The specimen consisted of larger $\alpha$-SiC exhibited lower density flexural strength and wear resistance is comparison with these of sample containning mainly $\beta$-SiC . This difference could be originated from the dependence of capillary force on the particle size. For the larger SiC particle, the liquid phase may not fill the whole pores during sintering, due to low capillary force, whereas the liquid phase can infiltrate into the small ores surrounded small $\beta$-SiC particle. Thus, the course of high flexural strength and high wear resistance of specimen prepared using small particles can be explaced from the easy infiltration of liquid phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.392-398
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• 1996

$Si_{3}N_{4}/SiC$ nanocomposites reinforced with tow different mean particle size were fabricated by hot press. Grain growth of matrix gran was inhibited by adding of SiC particles, and then number of equiaxed and fine grains were increased. The effect of grain growth inhibition was higher in the nanocomposites dispersed small size SiC. herefore fracture strength and hardness were increased, but fracture toughness was decreased in small size SiC dispersed samples.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.123-130
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• 1993

Dispersed type Al2O3-SiC composite powders were synthesized from Al-isopropoxide (Al(i-OC3H7)3) and Si(OC2H5)4 precursors by hydrolysis of mixed alkoxides and carbothermal reaction method. The characteristics of the synthesized (dispersed type) Al2O3-SiC composite powders were investigated using XRD, SEM, TEM, BET and particle size analyzer. Carbothermal reaction to produce Al2O3-SiC composite was completed in 10h at 135$0^{\circ}C$ on 3~4㎤/s (0.21~0.28cm/s) of H2 flow rate and about 1/1 of carbon/oxides(=SiO2＋Al2O3) molar ratio. The synthesized powders were observed to have the mean particle size range of 0.4~1.26${\mu}{\textrm}{m}$ and showed finer particle size with increasing SiC content.

• Bulletin of the Korean Chemical Society
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• v.25 no.6
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• pp.801-805
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• 2004

In this work, the fundamental study of on-line monitoring of $SiO_2$ particles in the size range of 40 nm to 725 nm was carried out using turbidimetry. The size of particle was measured using a field emission scanning electron microscope (FE-SEM). The factors affecting on the turbidity were discussed, for example, wavelength, size, and concentration. In order to observe the dependence of turbidity on the wavelength, a turbidimetric system equipped with charged coupled detector (CCD) was built. The shape of the transmitted peak was changed and the peak maximum was shifted to the red when the concentration of particle was increased. This result indicates that the turbidity is related to the wavelength, which corresponds to the characteristic of the Mie extinction coefficient, Q, that is a function of not only particle diameter and refractive index but also wavelength. It is clear that a linear calibration curve for each particle in different size can be obtained at an optimized wavelength.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.57-63
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• 2017

High-purity ${\beta}-SiC$ powders for SiC single-crystal growth were synthesized by direct carbonization. The use of high-purity raw materials to improve the quality of a SiC single crystal is important. To grow SiC single crystals by the PVT method, both the particle size and the packing density of the SiC powder are crucial factors that determine the sublimation rate. In this study, we tried to produce high-purity ${\beta}-SiC$ powder with large particle sizes and containing low silicon by introducing a milling step during the direct carbonization process. Controlled heating improved the purity of the ${\beta}-SiC$ powders to more than 99 % and increased the particle size to as much as ${\sim}100{\mu}m$. The ${\beta}-SiC$ powders were characterized by SEM, XRD, PSA, and chemical analysis to assess their purity. Then, we conducted single-crystal growth experiments, and the grown 4H-SiC crystals showed high structural perfection with a FWHM of about 25-48 arcsec.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.383-388
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• 2001

Effects of particle property variation of cone crack shape according to impact velocity in silicon carbide materials were investigated. The damage induced by spherical impact having different material and size was different according to materials. The size of ring cracks induced on the surface of specimen increased with increase of impact velocity within elastic contact conditions. The impact of steel particle produced larger ring cracks than that of SiC particle. In case of high impact velocity, the impact of SiC particle produced radial cracks by the elastic-plastic deformation at impact regions. Also percussion cone was formed from the back surface of specimen when particle size become large and its impact velocity exceeded a critical value. Increasing impact velocity, zenithal angle of cone cracks in SiC material was linearly decreasing not effect of impact particle size. An empirical equation, $\theta=\theta_{st}-\upsilon_p(180-\theta_{st})(\rho_p/\rho_s)^{1/2}/415$, was obtained from the test data as a function of quasi-static zenithal angle of cone crack($\theta_{st}$), the density of impact particle(${\rho}_p$) and specimen(${\rho}_s$). Applying this equation to the another materials, the variation of zenithal angle of cone crack could be predicted from the particle impact velocity.