• 센서학회지
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• 제4권3호
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• pp.51-59
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• 1995

실리콘기판 위에 스트레스균형이 이루어진 150 nm-$Si_{3}N_{4}$/300 nm-$SiO_{2}$/150 nm-$Si_{3}N_{4}$ 구조의 평탄한 유전체 멤브레인을 제작하였다. 이 멤브레인의 스트레스 특성평가를 위하여 stress-deflection, stress-temperature 및 스트레인 진단용 시험패턴의 특성을 측정분석하였고, 중간에 있는 $SiO_{2}$층을 PECVD, LPCVD 및 APCVD방법으로 각각 증착하여 $SiO_{2}$층의 증착방법에 따른 적층 유전체박막의 스트레스특성에 대해서도 논의하였다. 대부분의 경우 적층 유전체 멤브레인에 인장스트레스가 존재하였으나, $SiO_{2}$층의 증착방법과 거의 무관하게 $1,150^{\circ}C$의 후습식산화로 실리콘기판에 의해 멤브레인에 나타나는 인장스트레스의 균형을 얻을 수 있었다. 온도변화에 따른 멤브레인에서의 스트레스 변화특성으로 부터 후산화처리를 하지 않는 경우에는 중간의 $SiO_{2}$ 층으로 APCVD방법에 의해 증착된 LTO가 더 적합한 것으로 나타났다.

• 멤브레인
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• 제28권4호
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• pp.221-232
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• 2018

Poly(imide siloxane)(Si-PI)와 polyvinylpyrrolidone (PVP)를 혼합한 고분자를 사용하여 실리카가 함유된 탄소 분리막을 제조하였다. 고분자 혼합물의 열분해에 의해 제조 된 다공성 탄소 구조의 특성은 두 고분자의 미세 상 분리 거동과 관련이 있다. Si-PI와 PVP의 고분자 혼합물의 유리 전이 온도(Tg)는 시차 주사 열량계를 사용하여 단일 Tg로 관찰되었다. 또한 $C-SiO_2$ 막의 질소 흡착 등온선을 조사하여 다공성 탄소 구조의 특성을 규명했다. Si-PI/PVP로부터 유도 된 $C-SiO_2$ 막은 IV형 등온선을 나타내었고 중간기공의 탄소 구조와 관련된 히스테리시스 루프를 가지고 있었다. 분자 여과 확인을 위해서, Si-PI/PVP의 비율과 열분해 온도 및 등온 시간과 같은 열분해 조건을 다르게 하여 $C-SiO_2$ 막을 제조하였다. 결과적으로, 120분 간의 등온 시간 동안 $550^{\circ}C$에서 Si-PI/PVP의 열분해에 의해 제조된 $C-SiO_2$ 막의 투과도는 820 Barrer ($1{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$)이었으며, $O_2/N_2$ 선택도는 14이었다.

• Korean Membrane Journal
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• 제6권1호
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• pp.16-23
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• 2004

The silica containing carbon (C-SiO$_2$) membranes were fabricated using poly(imide siloxane) (PIS) having -CO- swivel group. The characteristics of porous C-SiO$_2$ structures prepared by the pyrolysis of poly(imide siloxane) were related with the micro-phase separation between the imide block and the siloxane block. Furthermore, the nitrogen adsorption isotherms of the CMS and the C-SiO$_2$ membranes were investigated to define the characteristics of porous structures. The C-SiO$_2$ membranes derived from PIS showed the type IV isotherm and possessed the hysteresis loop, which was associated with the mesoporous carbon structures, while the CMS membranes derived from PI showed the type I isotherm. For the molecular sieving probe, the C-SiO$_2$ membranes pyrolyzed at 550, 600, and 700$^{\circ}C$ showed the O$_2$ permeability of 924, 1076, and 367 Barrer (1 ${\times}$ 10$\^$-10/㎤(STP)cm/$\textrm{cm}^2$$.$s$.$cmHg) and O$_2$/N$_2$ selectivity of 9, 8, and 12.

• 한국수소및신에너지학회논문집
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• 제30권2호
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• pp.128-135
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• 2019

In this study, the mesoporous $SiO_2$ (5, 10, or 15 wt%) was incorporated into the polybenzimidazole matrix in order to improve the proton conduction as well as physiochemical properties of composite membrane. The chemical structure of mesoporous $SiO_2$ and crystallinity of as-prepared membranes were analyzed by Fourier-transform infrared (FT-IR) spectroscopy and X-ray diffraction (XRD) analysis, respectively. The thermal stability of the pristine $X_1Y_9$ and composite membranes were evaluated by thermogravimetric analyzer (TGA). On other side, the physical and chemical properties of the pristine $X_1Y_9$ and composite membranes were also determined by acid uptake and oxidative stability tests, respectively. With the incorporation of 15 wt% $SiO_2$, the composite membrane exhibits the higher proton conductivity that may be applicable for non-humidified high temperature fuel cell applications.

• 한국표면공학회지
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• 제39권6호
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• pp.255-262
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• 2006

Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.214-215
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• 2009

This paper presents the fabrication and characteristics of microheaters, built on AlN(0.1 um)/3C-SiC(1 um) suspended membranes. Pt was used as microheater and temperature sensor materials. The results of simulated are shown that AlN/3C-SiC membrane has more large uniform-temperature area than $SiO_2$/3C-SiC membrane. Resistance of temperature sensor and power consumption of microheater were measured and calculated. Pt microheater generates the heat of about $550^{\circ}C$ at 340 mW and TCR of Pt temperature sensor is about 3188 ppm/$^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.1020-1022
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• 1998

Silicon membrane to be used for micropump is fabricated and the deflection of the membrane driven by the electromagnetic force is measured. Silicon and glass are anodic bonded and Si is thinned. Silicon membrane is fabricated by the glass etching. The gold pattern can be protected against HF by the washing and fixing process under the glass etching process. The electromagnetic force is gained by the magnetic field driven by the current flowing through two coils. Deflection of the silicon membrane has a tendency of increasing with the increase of the driving current.

• 한국미생물·생명공학회지
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• 제40권3호
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• pp.278-281
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• 2012

Not much is known about the membrane trafficking of TRPV1, a key player in pain transduction. Rab11-FIP3, which plays a role in various intracellular transportation pathways, has been reported to interact with TRPV1. In this study, in order to examine the role of Rab11-FIP3 in the membrane trafficking of TRPV1, Rab11-FIP3 expression in dorsal root ganglion (DRG) was inhibited using a siRNA technique. Transportation of TRPV1 to membranes was found to decrease when Rab11-FIP3 expression was inhibited, consistent with the results obtained with TRPV1-transfected HEK cells. Taken together, these results indicate that Rab11-FIP3 plays a role in the membrane trafficking of TRPV1.

• 센서학회지
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• 제15권3호
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• pp.192-198
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• 2006

In this study, the light addressable potentiometric sensors (LAPS) with $Si_{3}N_{4}/SiO_{2}/Si$, and $Ta_{2}O_{5}/SiO_{2}/Si$ structures were fabricated. The penicillinsae was immobilized on the devices to hydrolyze the penicillin using self-assembled monolayer (SAM) method. Then response characteristics according to the penicillin concentrations were measured and compared. The measuring system was simplified by using LabVIEW. The pH response characteristics of fabricated devices are 56 mV/pH ($Si_{3}N_{4}$ sensing membrane) and 61 mV/pH ($Ta_{2}O_{5}$ sensing membrane). The sensitivity of sensor by enzyme reaction result of the enzyme reaction were 60 mV/decade and 74 mV/decade for $Si_{3}N_{4}/SiO_{2}/Si$ and $Ta_{2}O_{5}/SiO_{2}/Si$ structure, respectively, in the range of $0.1\;mM{\sim}10\;mM $of the penicillin concentration.