• 한국주조공학회지
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• 제33권2호
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• pp.69-74
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• 2013

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

• 한국재료학회지
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• 제11권5호
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• pp.398-404
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• 2001

SiC 보강재 표면에 도금된 Cu금속층이 Al/SiC복합재료의 젖음성에 미치는 영향을 검토하였다. 보강재에 대한 금속층의 도금은 무전해도금법을 이용하였으며, Al/SiC 복합재료의 제조는 텅스텐 발열체 진공로의$ 670^{\circ}C$~$900^{\circ}C$에서 제조하여 보강재와 기지간의 접촉부위를 촬영하여 젖음성을 측정하였다 젖음성 측정 결과 보강재에 도금된 Cu층은 젖음성을 향상시켰고, 젖음성의 개선은 보강재에 도금된 금속층과 기지간의 반응에 의해 계면에너지를 변화시킴으로서 나타난 결과이며. 반응을 통한 산화피막의 배제도 영향을 미친 것으로 판단된다

• 한국주조공학회지
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• 제23권1호
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• pp.40-46
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• 2003

Semisolid forming requires alloys with non-dendritic microstructure of the thixotropy. Recently, low pouring temperture method without stirring, i.e. liquidus casting has been found out new fabrication method of the semisolid metals. Effects of melt superheat and mold conditions on the globulization of primary Al of $AlSi_7Mg$ alloy were investigated in gravity casting process without stirring. The microstructures of primary Al as function of melt superheat and mold temperature show globular, rosette and dendritic shapes. The conditions for globular microstructure of primary Al were low melt superheat < 35 K and low mold temperature < 500 K. The thermal conditions for globular microstructure of primary Al were undercooled melt at early solidification stages and slow cooling < 0.6 K/s. It was found that the initial microstructure was maintained throughout the solidification and the globules of primary Al can be obtained by high nucleation of fine and spherical nuclei due to enhanced undercooling of melt.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 춘계학술대회 논문집
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• pp.166-169
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• 2004

Permalloys were successfully fabricated by melt drag casting in the present study, and their variation of microstructure and consequent magnetic properties were investigated as a function of Si contents and annealing temperature. The increases in Si content and annealing temperature resulted in the increases of grain size and amount of $FeNi_3$ ordered phase. Both the grain size and $FeNi_3$ ordered phase controlled by Si and annealing temperature had a important role on permeability of permalloys.

• 한국주조공학회지
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• 제25권2호
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• pp.102-108
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• 2005

The ability and fading behavior of inoculant in ductile cast iron melt and the effect of minor element on them were investigated. The result obtanied on nodularization and the performance of inoculant were more distinct when the melt was treated and held at the high temperature range of $1450{\sim}1500^{\circ}C$ than at the lower one of $1350{\sim}1400^{\circ}C$. The performance of 5.2%Mg-Fe-Si alloy was the best of 4 nodularizers. That of Fe-75%Si(I) alloy was better than other 4 inoculants. The performance of the Fe-75%Si(I) inoculant was deteoriated by the addition of sulfur or bismuth. On the other hand, that was improved by the addition of cerium, even though its extent was not big.

• 한국세라믹학회지
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• 제34권7호
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• pp.781-789
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• 1997

Pressure sintered SiC specimens were joined using MgO-Al2O3-SiO2 (MAS) glass which has a thermal expansion coefficient similar to that of SiC. MAS melt showed excellent behavior of wetting on the SiC substrate over 148$0^{\circ}C$, and the wettability was much influenced by the joining atmosphere. The joining was conducted at 150$0^{\circ}C$ for 30 min in Ar atmosphere. The flexural strength of the joined specimen shows 342~380 MPa up to 80$0^{\circ}C$, which is almost the same as that of as-recieved SiC specimen. However, the flexural strength of the joined specimen decreased to about 80 MPa at 90$0^{\circ}C$ due to softening of the glass melt. The analyses od XRD and WDS show that the reaction between the SiC specimen and the MAS melt produces the oxycarbide glass, which had a high strength and a good stability at high temperatures.

• 한국결정성장학회지
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• 제32권2호
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• pp.55-60
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• 2022

본 연구에서는 SiC 단결정의 TSSG 공정중 결정 품질을 저하시키지 않으면서도 의도하지 않은 질소 도핑(N-UID)을 쉽게 제어하기 위해 지금까지 Co 또는 Sc 전이금속을 첨가한 신규 용융조성을 제안한다. Co 또는 Sc의 특성을 파악하기 위해 Ar 분위기에서 1900℃ 온도에서 약 2시간 동안 열처리 실험을 수행했다. 용융조성은 Si-Ti 10 at% 또는 Si-Cr 30 at%를 비롯하여, 탄소 용해도에 효과적이라고 알려진 Co 또는 Sc을 각각 3 at% 첨가하였다. 열처리 후 도가니 단면을 가공하여 도가니-용융물 계면에서 발생한 Si-C 반응층을 관찰하고, 탄소황분석을 통해 조성에 따른 탄소 용해도를 간접적으로 분석하였다. 그 결과, Si-Sc 기반 용융조성이 TSSG 공정에 적합한 특성을 갖는 Si-C반응층을 형성하고 있었다. 또한 탄소황분석 결과에서도 Cr 다음으로 높은 탄소량이 갖는 것으로 분석되었다. Sc는 Cr에 비해 질소와의 반응성이 낮은 이점을 가지므로 TSSG 공정에 Si-Sc 용융조성을 적용하면, 본 연구에서 의도한 대로 SiC 단결정 성장속도와 질소 UID를 모두 제어할 수 있는 것으로 고려된다.

• 한국주조공학회지
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• 제21권3호
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• pp.179-186
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• 2001

Melt super-heating which promotes shape modification of ${\beta}$ intermetallic compounds was conducted to improve mechanical properties of recycled AC2B aluminum alloy. Modification of needle-shape ${\beta}$ intermetallic compounds was effective for the specimens of AC2B aluminum alloys containing 0.85wt.% Fe by melt super-heating, in which the melts had been held at $850^{\circ}C$ or $950^{\circ}C$ for 30 minutes respectively. Owing to the modification of needle-shape of ${\beta}$ intermetallic compounds by melt superheating of the alloy with containing 0.85wt.% Fe to $950^{\circ}C$, increases in elongation and tensile strength were prominent to be more than double and 55% respectively in comparison with the melt heated to $740^{\circ}C$. Moreover, modification of needle-shape ${\beta}$ intermetallic compounds in the alloy containing O.85wt.% Fe by $950^{\circ}C$ melt super-heating led to 48% improvement of the value of impact absorbed energy as compared with the melt heated to $740^{\circ}C$.

• 한국분말재료학회지
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• 제23권1호
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• pp.43-48
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• 2016

Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of $10-20{\mu}m$. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at $1100^{\circ}C$ upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at $1650^{\circ}C$ for more than 1 h.

• Current Photovoltaic Research
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• 제8권1호
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.