• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.45-49
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• 2008

The development of manufacturing process of silicon (Si) ingots is one of the important issues to the growth of the photovoltaic industry. Polycrystalline Si wafers shares more than 60% of the photovoltaic market due to its cost advantage compared to mono crystalline silicon wafers. Several solidification processes have been developed by industry including casting, heat exchange method (HEM) and electromagnetic casting. In this paper, the advanced directional solidification (ADS) method is used to growth of large sized polycrystalline Si ingot. This method has the advantages of the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is applied using a fluid dynamics model to simulate the temperature distribution. The results of simulations are confirmed efficient directional solidification to the growth of large sized polycrystalline Si ingot above 240 kg.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.29-35
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• 1998

Substrates, SiC raw materials and graphite crucibles were purified for growing the high quality 6H-SiC single crystal ingot. Especially, XRD data of raw materials were analyzed before and after purification. We have grown 6H-SiC single crystal ingot up to 33 mm in diameter and 11 mm in length and SiC wafer for using the substrate and observing the internal defects was about 33 mm in diameter and 0.5 mm in thickness. Utilizing optical microscpe and Raman spectroscopy, internal defects density and crystallinity of the SiC wafer obtained by purification processes before crystal growth were measured. As a result, micropipe density and planar defect density were 100/$\textrm{cm}^2$ and 30/$\textrm{cm}^2$ respectively. Therefore, high quality 6H-SiC single crystal could be grown because internal defects density of 6H-SiC single crystal ingot was decreased by the purification processes before crystal growth.

• Journal of Korea Foundry Society
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• v.18 no.6
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• pp.541-549
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• 1998

Microstructural characteristics of hypereutectic Al-Si alloys during reheating at semi-solid temperature have been investigated. The size and morphology of primary Si particles in wedge-type mold-cast ingot has been compared with hot-rolled sheet and Si particulate reinforced Al composite. Effects of P and Sr addition on the morphological changes of primary Si particles have been also investigated. Observation of the solidification microstructures of the wedge-type mold-cast ingot at different cooling rates showed that alloying elements such as P and Sr affect the morphology of Si particles, especially in the area solidified at a slow cooling rate. Negligible change in the size of primary crystals was observed after reheating experiment, but ${\alpha}-halo$ formed around the Si particles and fine particles of Si precipitated in the surrounding area of the Si particles. In addition, there seemed to be no coarsening with increasing of holding time and the region of ${\alpha}-halo$ being decreased. Nucleation and recrystallization was accelerated with addition of alloying elements during hot rolling resulting in a decrease of primary Si particle size. In the case of extruded specimens, morphological change of primary Si particles was not observed after reheating. No ${\alpha}-halo$ formation was observed in Si reinforced Al composite because of the oxide film formed on the Si particles which acted as a diffusion barrier between substrate and the primary Si particles.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.907-911
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• 2012

High purity silicon can be obtained from Al-Si alloys by a combination of solvent refining and centrifugation. Silicon purification by crystallization of silicon from an Al-Si alloy melt was carried out using 2N and 4N purity aluminum and 2N purity silicon as raw materials. The effect of the purity of raw materials on the final silicon ingot purity by centrifugation was investigated for an Al-50 wt% Si alloy. Alloys were melted using an electrical resistance furnace, and then poured into a centrifuging apparatus. A silicon lump like foam was obtained after centrifugation and was leached by an acid in order to get pure silicon flakes. Then silicon flakes were melted to make a silicon ingot using an induction furnace. The purities of the silicon flakes and silicon ingot were enhanced significantly compared to those of the raw materials of silicon and aluminum. The silicon ingot made of 4N aluminum and 2N silicon showed the lowest impurities.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.94-97
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• 2005

For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.21-27
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• 2023

In this article, a plate-type megasonic cleaning system with cooling pins is proposed for the sliced ingot, which is a raw material of silicon (Si) wafers. The megasonic system is operated with a lead zirconate titanate (PZT) actuator, which has high electric resistance, thus when it is being operated, it dissipates much heat. So this article proposes a megasonic system with cooling pins. In the design process, finite element analysis was performed and the results were used for the design of the waveguide. The frequency with the maximum impedance value was 998 kHz, which agreed well with the measured value of 997 kHz with 0.1 % error. Based on the results, the 1 MHz waveguide was fabricated. Acoustic pressures were measured, and analyzed. Finally, cleaning tests were performed, and 90 % particle removal efficiency (PRE) was achieved over 10 W power. These results imply that the developed 1 MHz megasonic will effectively clean sliced ingot wafer surfaces.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• Journal of Technologic Dentistry
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• v.14 no.1
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• pp.119-132
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• 1992

This paper aims to investigate the effect of B and Si upon the mechanical properties, microstructure and corrosion resistance of Co-Cr base alloy. Ten groups of alloy ingot ingot with various contents of B and Si were remelted by high frequency electrical induction furnace and cast into tensile specimen of ADA Specification No. 14 Tensile and hardness test were carried out by Amsler and Rockwell hardness tester(R-30N), respectively. The microstructures of specimen were observed by SEM. The results obtained are summarized as follows : 1. As B content is increased, tensile strength, yield strength and Rockwell hardness number(R-30N) are also increased significantly, while the elongation is decreased significantly. 2. As Si contect os increased, no significant chang in tensile strength is noticed, yield strength is slightly decreased, but Rockwell hardness number(R-30N) is moderately in creased, Elongation marks maxium value with 1% Si content while with more than 1% Si it is decreased. 3. As B content is increased corrosion resistance is decreased and is at best with 1.5% B content. Corrosion resistance is increased with the increase of Si content and the alloys with Si over 3.0% showed corrosion resistance. 4. As B content increased, precipitates are increased in number at grain boundaries. The grain size tends to become coarse with the increase of Si content. 5. Co rich-Cr alloy is present through matrix whereas at the grain boundaries Cr base precipitates are primarily formed.

• Nuclear Engineering and Technology
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• v.53 no.5
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• pp.1619-1625
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• 2021

This paper demonstrates the possible nondestructive analysis of iron artifacts' metallurgical characteristics using neutron imaging. Ancient kingdoms of the Korean Peninsula used a direct smelting process for ore smelting and iron bloom production; however, the use of iron blooms was difficult because of their low strength and purity. For reinforcement, iron ingots were produced through refining and forge welding, which then underwent various processes to create different iron goods. To demonstrate the potential analysis using neutron imaging, while ensuring artifacts' safety, a sand iron ingot (SI-I) produced using ancient traditional iron making techniques and a sand iron knife (SI-K) made of SI-I were selected. SI-I was cut into 9 cm², whereas the entirety of SI-K was preserved for analysis. SI-I was found to have an average grain size of 3 ㎛, with observed α-Fe (ferrite) and pearlite with a body-centered cubic (BCC) lattice structure. SI-K had a grain size of 1-3 ㎛, α-Ferrite on its backside, and martensite with a body-centered tetragonal (BCT) structure on its blade. Results show that the sample's metallurgical characteristics can be identified through neutron imaging only, without losing any part of the valuable artifacts, indicating applicability to cultural artifacts requiring complete preservation.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.49-55
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• 2018

Recently solar cell industry needs the optimal design of Czochralski process for low cost high quality silicon mono crystalline ingot. Because market needs both high efficient solar cell and similar cost with multi-crystalline Si ingot. For cost reduction in Czochralski process, first of all energy reduction should be completed because Czochralski process is high energy consumption process. For this purpose we studied optimal water-cooling tube design and simultaneously we also check the quality of ingot with Von mises stress and V(pull speed of ingot)/G(temperature gradient to the crystallization) values. At this research we used $CG-Sim^{(R)}$ S/W package and finally we got improved water-cooling tube design than normally used process in present industry. The optimal water-cooling tube length should be 200mm. The result will be adopted at real industry.