• Title/Summary/Keyword: Si addition

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Study on the Compaction Properties of Fe-Si-Al-Graphite Powder Mixtures (Fe-Si-Al-Graphite 분말 혼합체의 압축 특성 연구)

  • Jeong, Jun Hyeok;Choi, Jinnil
    • Journal of Powder Materials
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    • v.27 no.4
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    • pp.300-304
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    • 2020
  • In this paper, a durability study is presented to enhance the mechanical properties of an Fe-Si-Al powder-based magnetic core, through the addition of graphite. The compressive properties of Fe-Si-Al-graphite powder mixtures are explored using discrete element method (DEM), and a powder compaction experiment is performed under identical conditions to verify the reliability of the DEM analysis. Important parameters for powder compaction of Fe-Si-Al-graphite powder mixtures are identified. The compressibility of the powders is observed to increase as the amount of graphite mixture increases and as the size of the graphite powders decreases. In addition, the compaction properties of the Fe-Si-Al-graphite powder mixtures are further explored by analyzing the transmissibility of stress between the top and bottom punches as well as the distribution of the compressive force. The application of graphite powders is confirmed to result in improved stress transmission and compressive force distribution, by 24% and 51%, respectively.

Rapid Thermal Annealing at the Temperature of 650℃ Ag Films on SiO2 Deposited STS Substrates

  • Kim, Moojin;Kim, Kyoung-Bo
    • Applied Science and Convergence Technology
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    • v.26 no.6
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    • pp.208-213
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    • 2017
  • Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

Microstructures and Mechanical Properties of SiCp/ Al-Si-Mg Alloy Composites Fabricated by Rheo-compocasting and Hot Extrusion (Rheo-compocasting 및 열간압출에 의하여 제조한 Al-Si-Mg / SiC 입자강화 복합재료의 조직 및 기계적 특성)

  • Lee, Hag-Ju;Hong, Chun-Pyo
    • Journal of Korea Foundry Society
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    • v.12 no.4
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    • pp.335-345
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    • 1992
  • Aluminum alloy matrix composites reinforced with various amounts of SiC particles have been produced by rheo-compocasting followed by hot extrusion. A relatively uniform distribution of SiC particles in the composites was obtained. The amounts of pore and SiC particles cluster were relatively small in the composites. Particle free zones were observed in the hot extruded composites when the amount of SiC particles was less than 20 vol%. However, the width of particle free zone decreases with the increase of SiC particle content. Eutectic Si phase play an important role for improving bonding between SiC particle and matrix. Tensile and yield strength increased with the increase of SiC particle content. the strenthening effect of SiC particle addition was effective even at relatively high temperature of 573 K.

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Epitaxial Growth of $\beta$-SiC Thin Films on Si(100) Substrate without a Carburized Buffer Layer

  • Wook Bahng;Kim, Hyeong-Joon
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.163-168
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    • 1997
  • Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

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Microstructure of Ti-Cr-Si-N Coatings Deposited by a Hybrid System of Arc ion Plating and Sputtering Techniques (하이브리드 코팅시스템에 의해 제조된 Ti-Cr-Si-N 박막의 미세구조 및 기계적 특성연구)

  • Kang Dong Shik;Jeon Jin Woo;Song Pung Keun;Kim Kwang Ho
    • Journal of the Korean institute of surface engineering
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    • v.38 no.3
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    • pp.95-99
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    • 2005
  • Quaternary Ti-Cr-Si-N coatings were synthesized onto steel substrates (SKD 11) using a hybrid method of arc ion plating (AIP) and sputtering techniques. For the Syntheses of Ti-Cr-Si-N coatings, the Ti-Cr-N coating process was performed substantially by a multi-cathodic AIP technique rising Cr and Ti targets, and Si was added by sputtering Si target during Ti-Cr-N deposition. In this work, comparative studies on microstructure and evaluation of mechanical properties between Ti-Cr-N and Ti-Cr-Si-N coatings were conducted. As the Si was incorporated into Ti-Cr-N coatings, the Ti-Cr-Si-N coatings showed largely increased hardness value of approximately 42 GPa than one of 28 GPa for Ti-Cr-N coatings. The average friction coefficient of Ti-Cr-N coatings largely decreased from 0.7 to 0.35 with increasing Si content up to 20 at. $\%$. In addition, wear behavior of Ti-Cr-N coatings against steel ball was much improved with Si addition due to the surface smoothening effect and tribe-chemical reaction.

FABRICATION AND MATERIAL ISSUES FOR THE APPLICATION OF SiC COMPOSITES TO LWR FUEL CLADDING

  • Kim, Weon-Ju;Kim, Daejong;Park, Ji Yeon
    • Nuclear Engineering and Technology
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    • v.45 no.4
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    • pp.565-572
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    • 2013
  • The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade $SiC_f/SiC$ composites are briefly reviewed. A CVI-processed $SiC_f/SiC$ composite with a PyC or $(PyC-SiC)_n$ interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs to be clarified to confirm the possibility of a burn-up extension and the cost-benefit effect of the SiC composite cladding. In addition, the development of end-plug joining technology and fission products retention capability of the ceramic composite tube would be key challenges for the successful application of SiC composite cladding.

The Influence of a Second Metal on the Ni/SiC Catalyst for the Methanation of Syngas

  • Song, Lanlan;Yu, Yue;Wang, Xiaoxiao;Jin, Guoqiang;Wang, Yingyong;Guo, XiangYun
    • Korean Chemical Engineering Research
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    • v.52 no.5
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    • pp.678-687
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    • 2014
  • The catalytic performance of silicon carbide supported nickel catalysts modified with or without second metal (Co, Cu and Zn) for the methanation of CO has been investigated in a fixed-bed reactor using a feed consisting of 25% CO and 75% $H_2$ without any diluent gas. It has been found that the introduction of Co species can clearly improve the catalytic activity of Ni/SiC catalyst, whereas the addition of Cu or Zn can result in a significant decrease in the catalytic activity. The characterizations by means of XRD, TEM, XPS, CO-TPD and $H_2$-TPR indicate that the addition of Co could decrease the particle size of active metal, increase active sites on the surface of methanation catalyst, improve the chemisorption of CO and enhance the reducibility of methanation catalysts. Additionally, the special interaction between Co species and Ni species is likely favorable for the dissociation of adsorbed CO on the surface of catalyst, and this may also contribute to the high activity of 5Co-Ni/SiC catalyst for CO methanation reaction. For 5Cu-Ni/SiC catalyst and 5Zn-Ni/SiC catalyst, Cu and Zn species could cover partial nickel particles and decrease the chemisorption amount of CO. These could be responsible for the low methanation activity. In addition, a 150h stability test under 2 MPa and $300^{\circ}C$ showed that 5Co-Ni/SiC catalyst was very stable for CO methanation reaction.

Effect of SiC Particle Size on Microstructure of $Si_3N_4/SiC$ Nanocomposites ($Si_3N_4/SiC$ 초미립복합체의 미세조직에 미치는 SiC 입자크기의 영향)

  • 이창주;김득중
    • Journal of the Korean Ceramic Society
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    • v.37 no.2
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    • pp.152-157
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    • 2000
  • Si3N4/SiC nanocomposite ceramics containing 5 wt%dispersed SiC particles were prepared by gas-pressure-sintering at 200$0^{\circ}C$ under nitrogen atmosphere. SiC particles with average sizes of 0.2 and 0.5${\mu}{\textrm}{m}$ were used, and the effect of the SiC particle size on the microstructure was investigated. The addition of SiC particles effectively suppressed the growth of the Si3N4 matrix grains. The effect of grain growth inhibition was higher in the nanocomposites dispersed with fine SiC. SiC particles were dispersed uniformly inside Si3N4 matrix grains and on grain boundaries. When the fine SiC particles were added, large fraction of the SiC particles was trapped inside the grains. On the other hand, when the large SiC particles were added, most of the SiC particles were located on grain boundaries. Typically, the fraction of SiC particles located at grain boundaries was higher in the specimen prepared from $\beta$-Si3N4 than in the specimen prepared from $\alpha$-Si3N4.

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TMAH/IPA Anisotropic Etching Characteristics with Addition of Pyrazine (Pyrazine이 첨가된 TMAH/IPA 이방성 식각특성)

  • 박진성;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.23-26
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    • 1997
  • This work presents the TMAH/IPA anisotropic etching characteristics with addition of Pyrazine. (100) Si etching rate of 0.747 ${\mu}{\textrm}{m}$/min at 8$0^{\circ}C$ was obtained using TMAH 25 wt.% / IPA 17 vol.% / pyrazine 0.1 g. The etching rate of (100) Si is increased about 52% compare to pure TMAH 25 wt.%. But etching rate of (100) Si is decreased with increasing Pyrazine additive. Activation energy of TMAH/IPA/pyrazine is much lower than TMAH and TMAH/IPA solutions. Addition of Pyrazine does not effect on surface flatness and decreases undercutting ratio about 20 %. Therefore, TMAH/IPA/pyrazine is an attractive anisotropic etchant because of alkaline-ion free.

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