• Proceedings of the KIPE Conference
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• 2013.11a
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• pp.89-90
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• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• Proceedings of the KIPE Conference
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• 2019.07a
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• pp.273-274
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• 2019

본 논문에서는 SiC MOSFET를 적용한 전기자동차용 LDC의 개발에 대해 다룬다. SiC MOSFET는 기존 Si 계열의 전력 반도체 소자에 비해 고주파 동작이 용이하며 스위칭 손실이 낮아 고효율, 고전력밀도 설계가 가능하다는 장점을 갖는다. 본 논문에서는 SiC MOSFET를 이용한 LDC의 설계에 대해 서술하고, 이를 시뮬레이션 및 실험을 통해 검증하였다.

• Journal of IKEEE
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• v.24 no.2
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• pp.592-597
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• 2020

Since SiC has 10 times higher breakdown field and 3 times higher energy gap than Si, it is possible to manufacture an excellent power MOSFET with a high breakdown voltage. However, since it has a high on-resistance due to low mobility, a Trench MOSFET has been proposed to lower it, but at the same time, it has a problem that BV decreases. The purpose of this paper is to design a 1200V trench MOSFET, and to solve this, split Epi depth, Trench depth, and Trench depth to Epi depth, which are important variables for BV and Ron, to achieve maximum electric field, BV, Ron's reliability characteristics were compared and analyzed. As the epi depth increased, the trench depth decreased, and the epi depth decreased at the trench depth, the maximum electric field decrease, BV increase, and Ron increase were confirmed. All results were simulated by sentaurus TCAD.

• Journal of IKEEE
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• v.25 no.1
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• pp.15-24
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• 2021

In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.193-194
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• 2014

This paper compares physical characteristic of MOSFET based on Si and SiC to achieve high efficiency in converters using MOSFETs which are typical switching elements. Also, it compares a result to compare operating efficiency when DC/DC converter is switching with each element.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.101-102
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• 2009

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.147-148
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• 2016

토템폴 구조는 브리지리스 부스트 역률보상회로 중에서도 저손실, 고효율, 저비용 그리고 낮은 전도 EMI의 특징으로 인해 많이 사용된다. 토템폴 구조의 역률보상 회로는 내부 다이오드의 역회복 문제로 인해 Si MOSFET을 이용한 전류연속모드 구동할 수 없어 전류 불연속 모드 혹은 임계 도통 모드로 동작시키는 것이 통상적이다. 본 논문에서는 역회복 문제를 해결해 전류연속모드 구동하기 위해 기존 Si MOSFET보다 낮은 역회복 전하(Qrr)와 역회복 시간(Trr)를 가지는 SiC MOSFET을 이용하여 토템폴 역률 보상 회로를 구현하고 이를 시뮬레이션과 실험을 통해 검증했다.

• Journal of IKEEE
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• v.23 no.3
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• pp.832-838
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• 2019

In this paper, 4H-SiC MOSFET, the next generation power semiconductor device, was studied. In particular, Semi-SJ MOSFET structures with improved electrical characteristics than conventional DMOSFET structures were proposed in the class of 3300V, and static characteristics of conventional and proposed structures were compared and analyzed through TCAD simulations. Semi-SuperJunction MOSFET structure is partly structure that introduces SuperJunction, improves Electric field distribution through the two-dimensional depletion effect, and increases breakdown voltage. Benefit from the improvement of breakdown voltage, which can improve the on resistance as high doping is possible. The proposed structure has a slight reduction in breakdown voltage, but has an 80% decrease in on resistance compared to the conventional DMOSFET structure, and a 44% decrease in on resistance compared to the Current Spreading Layer(CSL) structure that improves the conventional DMOSFET structure.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.161-162
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• 2016

일반적으로 사용되는 전력 스위치 소자에는 IGBT, MOSFET 등이 있다. 그 중 IGBT 소자는 용량 특성이 우수하여 고 용량 인버터에서 사용가능하다는 장점이 있으나 턴 오프 동작 시 손실 특성과 다이오드 역 회복 특성으로 인해 고속 스위칭 동작에는 부적합하다는 단점이 있다. 최근에는 SiC를 사용한 MOSFET의 개발이 진행되어 MOSFET의 대용량화 및 스위칭 손실저감이 이루어졌고 이에 따라, 본 논문에서는 SiC MOSFET을 이용한 고속 스위칭 인버터를 제안하였으며 그 특성을 기존의 IGBT 소자를 이용한 인버터와 비교분석하고 이를 시뮬레이션을 통해 검증하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.480-484
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• 2000

The channel length influence of n-channel Si-based FETs is investigated by computer simulation. Using a two-dimensional hydrodynamic model, devices having various gate length are examined. We have observed the characteristics of LDD model of MOSFET by investigating of their current, voltage, electric field and impact ionization. These devices are scaled using various factors. We have analyzed I-V characteristics and the effect of impact ionization according to channel length.