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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Analysis of electrical characteristics according to the design parameter of 1200V 4H-SiC trench MOSFET

1200V급 4H-SiC Trench MOSFET의 Design parameter에 따른 전기적 특성 분석

  • Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University) ;
  • Seo, Jeong-Ju (Dept. of Electronics Engineering, Dankook University) ;
  • Jin, Seung-hoo (Dept. of Electronics Engineering, Dankook University) ;
  • Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
  • Received : 2020.06.06
  • Accepted : 2020.06.26
  • Published : 2020.06.30
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Abstract

Since SiC has 10 times higher breakdown field and 3 times higher energy gap than Si, it is possible to manufacture an excellent power MOSFET with a high breakdown voltage. However, since it has a high on-resistance due to low mobility, a Trench MOSFET has been proposed to lower it, but at the same time, it has a problem that BV decreases. The purpose of this paper is to design a 1200V trench MOSFET, and to solve this, split Epi depth, Trench depth, and Trench depth to Epi depth, which are important variables for BV and Ron, to achieve maximum electric field, BV, Ron's reliability characteristics were compared and analyzed. As the epi depth increased, the trench depth decreased, and the epi depth decreased at the trench depth, the maximum electric field decrease, BV increase, and Ron increase were confirmed. All results were simulated by sentaurus TCAD.

SiC는 Si에 비해서 Breakdown field가 10배 높고, Energy gap이 3배 높기 때문에 높은 Breakdown voltage를 갖는 우수한 전력 MOSFET을 제작할 수 있다. 하지만 낮은 Mobility로 인한 높은 On저항을 갖기 때문에 이를 낮추기 위해서 Trench MOSFET이 제안되었지만 동시에 BV가 감소한다는 문제점을 갖는다. 본 논문에서는 1200V급 Trench MOSFET 설계를 목적으로 하며, 이를 해결하기 위해서 BV와 Ron에 대한 중요한 변수인 Epi 깊이, Trench 깊이, Trench 깊이에서 Epi 깊이까지의 거리에 대한 Split을 진행하여 최대 전계, BV, Ron의 신뢰성 특성을 비교 분석하였다. Epi 깊이가 증가할수록, Trench 깊이가 감소할수록, Trench 깊이에서 Epi 깊이가 감소할수록 최대 전계 감소, BV 증가, Ron 증가를 확인하였다. 모든 결과는 Sentaurus TCAD를 통해 Simulation 되었다.

Keywords

References

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