• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.61-75
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• 1997

The bond strengths of composite resin to tooth dentin vary with the methods of cavity preparation and surface treatment. Recent developments in techniques of dentinal surface treatment have renewed interest in microabrasive as a means of tooth preparation, The purpose of this study was to determine the effects of a new method of cavity preparation on the bond of composite resin to dentin. Freshly extracted 144 healthy human third molars were used in this study. The dentin surfaces prepared with #600 SiC abrasive paper were divided into control and air abrasion groups according to the method of dentin surface preparation using different combinations of delivery pressure, time, and acid etching. The shear bond strengths were measured after the composite resin (Clearfil Photo Bright) was bonded to prepared dentin surfaces by light-curing using a dentin bonding system (All-bond 2), In addition, the average surface roughness was measured to investigate the effect of differently prepared dentin surfaces on the shear bond strengths. The surface changes of prepared dentin and the debonded dentin surfaces were observed with SEM (S-2300, Hitachi Co., Japan). The following results from this-study were obtained ; 1. There was no significant difference of shear bond strengths according to the changes of delivery pressure and time. 2. The shear bond strengths were lower than the control in the air abraded-only groups, but those of the additional acid-etched groups were higher than the control. 3. The shear bond strengths to all air-abraded surfaces were increased by acid etching. 4. The correlation between shear bond strengths and surface roughness was not certain, although the mean surface roughness of all air-abraded surfaces has increased evidently while it has slightly decreased for additional acid etching. 5. On SEM examination, the dentinal tubules were almost occluded in the air abraded-only groups, but those were opened in the additional acid-etched groups. 6. The debonded surfaces were showed adhesive failure mode in the air abraded- only groups, while those were showed mainly the mixed and cohesive failure mode in the additional acid-etched groups. These results suggest that the layer produced during cavity preparation or surface treatment with air abrasion must be removed for maximum bond strength of composite resin to dentin.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.5
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• pp.589-600
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• 2007

Statement of Problem: Titanium has many advantages of high biocompatibility, physical porperties, low-weight, low price and radiolucency, but it is incompatible with conventional dental porcelain due to titanium's oxidative nature. Many previous studies have shown that they used the method of sandblast surface treatment prior to porcelain application, the researchs are processing about the method of acid etching or surface coating. Purpose: The purpose of this research is to study the effect on bond strength between titanium and porcelain when using macro-surface treatment and micro-surface treatment and macro and micro surface treatment. Material and method: In this study, we evaluated the bond strength by using 3-point bending test based on ISO 9693 after classified 7 groups-group P : polished with #1200 grit SiC paper, group SS : sandblasted with $50{\mu}m$ aluminum oxides, group LS : sandblasted with $250{\mu}m$ alumium oxides, group HC : treated with 10% hydrochloric acid, group NF : treated with 17% solution of fluoric acid and nitric acid, group SHC : treated with 10% hydrochloric aicd after sandblsting with $50{\mu}m$ alumium oxides, group SNF treated with 17% solution of fluoric acid and nitric acid. Results : Within the confines of our research, the following results can be deduced. 1. Group SS which was sandblasted with $50{\mu}m$ aluminum oxides showed the highest bond strength of 61.74 MPa and significant differences(P<0.05). The bond strengths with porcelain in groups treated acid etching after sandblasting decreased more preferable than the group treated with sandblasting only. It gives significant differences(P<0.05). 2. After surface treatments, the group treated with sandblasting showed irregular aspect formed many undercuts, in the SEM photographs. The group treated with hydrochloric acid had the sharp serrated surfaces, the group treated with the solution of fluoric acid and nitric acid had the smooth surfaces, the group with sandblasting and hydrochloric acid had irrigular and porous structure, the group with sandblasting and the solution of fluoric acid and nitric acid had crater-like surfaces. But all of the groups treated with acid etching was not found and undercut. Conclusion: In above results, average surface roughness increase, bond strength also increase, but surface topographs influences more greatly on bond strengths.

• Restorative Dentistry and Endodontics
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• v.25 no.2
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• pp.243-253
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• 2000

The purpose of this in vitro study was to evaluate dentin bonding by two different dentin bonding systems(DBS) using acetone based primer or adhesive [All Bond 2(AB2), One Step(OS)] when they were applied by wet or dry bonding technique. Morphology of resin-dentin interface and hybrid layer thickness(HLT) were investigated using Confocal Laser Scanning Microscope(CLSM) and compared to shear bond strength(SBS). 72 extracted sound human molars were randomly divided into 4 groups of 18 teeth each - Group 1.(AW); AB2 by wet bonding. Group 2(AD); AB2 by dry bonding. Group 3.(OW); OS by wet bonding, Group 4.(OD); OS by dry bonding. In 6 teeth of each group, notch-shaped class V cavities(depth 2mm) were prepared on buccal and lingual surface at the cementoenamel juction(12 cavities per group). To obtain color contrast in CLSM observation, bonding resins of each DBS were mixed with rhodamine B and primer of AB2 was mixed with sodium fluorescein. Prepared teeth of each group were treated with AB2, OS, respectively according to the manufacturer's instructions except for dentin surface moisture treatment after acid etching. In group 1 and 3, after acid etching, excess water was removed with wet tissue(Kimwipes), leaving consistently shiny, visibly hydrated dentin surface. In group 2 and 4, dentin surface was dried for 10 seconds at 1 inch distance. The treated teeth were then packed with composite resin(${\AE}$litefil) and light-cured. 12 microscopic samples($60{\sim}80{\mu}m$ thickness) of each group were obtained after longitudinal section and grinding(Exakt cutting and grinding system). Morphological investigation of resin-dentin interface and HLT measurement using CLSM were done. For measurement of SBS, remaining 12 teeth of each group were flattened occlusally to remove all enamel and grinded to 500 grit SiC(Pedemet Specimen Preparation Equipment). After applying DBS on the exposed dentin surface, composite resin was applied in the shape of cylinder, which has 5mm diameter, 1.5mm thickness, and light cured. SBS was measured using Instron with a crosshead speed of 0.5mm/min. It was concluded as follows, 1. HLT of AW(mean: $2.59{\mu}m$) was thicker than any other group, and followed by AD, OW, OD in descending order(mean; 2.37, 2.28, $1.92{\mu}m$). Only OD had statistically significant differences(p<0.05) to AW and AD. 2. There were intimate contact of resin and dentin at the interface in wet bonding groups, but gaps or irregular interfaces were observed in dry bonding groups. 3. The length, diameter, density of resin tags were various even in the same group without significant differences between groups and lots of adhesive lateral branches were observed. 4. There were no statistically significant difference of SBS between AB2 and OS, but SBS of wet bonding groups were significantly higher(p<0.05) than dry bonding groups. 5. There were no consistent relationships between HLT and SBS.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.31-37
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• 2013

Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.31-36
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• 2015

The demand for multi-functionality, high density, high performance, and miniaturization of IC devices has caused the technology paradigm shift for electronic packaging. So, thermal management of new packaged chips becomes a bottleneck for the performance of next generation devices. Among various thermal solutions such as heat sink, heat spreader, TIM, thermoelectric cooler, etc. on-chip liquid cooling module was investigated in this study. Micro-channel was fabricated on Si wafer using a deep reactive ion etching, and 3 different micro-channel designs (straight MC, serpentine MC, zigzag MC) were formed to evalute the effectiveness of liquid cooling. At the heating temperature of $200^{\circ}C$ and coolant flow rate of 150ml/min, straight MC showed the high temperature differential of ${\sim}44^{\circ}C$ after liquid cooling. The shape of liquid flowing through micro-channel was observed by fluorescence microscope, and the temperarue differential of liquid cooling module was measuremd by IR microscope.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.177.1-177.1
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• 2015

플라즈마 건식 식각공정은 반도체 공정에 있어 증착 및 세정 공정과 함께 중요한 공정중 하나이다. 기존 연구에서는 높은 식각 속도, 종횡비, 대면적에 대한 균일도 증가를 위하여 플라즈마 이온 밀도의 증가와 전자 온도를 감소시키기 위한 노력을 하고 있으며 플라즈마 식각분석 연구에서는 분광학 분석 기법을 활용하여 플라즈마에 의하여 활성화된 식각 가스와 박막 표면의 반응 메커니즘 연구가 진행 중에 있다. 그러나 지금까지의 플라즈마 식각연구에서는 플라즈마 식각 공정에서 발생되는 박막의 damage에 대한 연구는 전무하다. 본 연구에서는 플라즈마 식각과정에서 발생되는 박막 표면의 damage 연구를 위하여 Nano-indenter에 의한 분석 기법을 제시하였다. Nano-indentation 기법은 박막 표면을 indenter tip으로 직접 인가하여 박막 표면의 기계적 특성을 분석하고 이를 통하여 플라즈마에 의한 박막 표면의 물성 변화를 정량적으로 측정한다. 실험에서 플라즈마 소스는 Adaptively Coupled Plasma (ACP)를 사용하였고 식각 가스로는 HBr 가스를 주로 사용하였으며, 플라즈마 소스 파워는 1000 W로 고정 하였다. 연구 결과에 의하면 식각공정 챔버 내 압력이 5, 10, 15 및 20 mTorr로 증가함에 따라 TEOS SiO2 박막의 강도가 7.76, 8.55, 8.88 및 6.29 GPa로 변화되는 것을 측정하였고 bias power에 따라서도 다르게 측정됨을 확인하였다. 이 결과를 통하여 Nano-indentation 분석 기법을 활용하여 TEOS SiO2 박막의 식각공정의 변화에 따른 강도변화를 측정함으로써 플라즈마에 의한 박막 표면의 damage를 정량적으로 측정 가능함을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1196-1200
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• 2004

Micropump is very useful component in micro/nano fluidics and bioMEMS applications. In this study, a bubble-powered micropump was fabricated and tested. The micropump consists of two-parallel micro line heaters, a pair of nozzle-diffuser flow controller and a 1 mm in diameter, 400 ${\mu}m$ in depth pumping chamber. The two-parallel micro line heaters with 20 ${\mu}m-width$ and 200 ${\mu}m-length$ were fabricated to be embedded in the silicon dioxide layer of a wafer which serves as a base plate for the micropump. The pumping chamber, the pair of nozzle-diffuser unit and microchannels including the liquid inlet and outlet port were fabricated by etching through another silicon wafer. A glass wafer (thickness of $525{\pm}15$ ${\mu}m$) having two holes of inlet and outlet ports of liquid serve as upper plate of the pump. Finally the silicon wafer of the base plate, the silicon wafer of pumping chamber and the glass wafer were aligned and bonded (Si-Si bonding and anodic bonding). A sequential photograph of bubble nucleation, growth and collapse was visualized by CCD camera. Clearly liquid flow through the nozzle during the period of bubble growth and slight back flow of liquid at the end of collapsing period can be seen. The mass flow rate was found to be dependent on the duty ratio and the operation frequency. As duty ratio increases, flow rate decreases gradually when the duty ratio exceeds 60%. Also as the operation frequency increases, the flow rate of the micropump decreases slightly.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.682-688
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• 2014

Physical and chemical changes in a polished wafer and in $2.5{\mu}m$ & $4{\mu}m$ epitaxially grown Si layer wafers (Epilayer wafer) after surface treatment were investigated. We characterized the influence of surface treatment on wafer properties such as surface roughness and the chemical composition and bonds. After each surface treatment, the physical change of the wafer surface was evaluated by atomic force microscopy to confirm the surface morphology and roughness. In addition, chemical changes in the wafer surface were studied by X-ray photoemission spectroscopy measurement. Changes in the chemical composition were confirmed before and after the surface treatment. By combined analysis of the physical and chemical changes, we found that diluted hydrofluoric acid treatment is more effective than buffered oxide etching for $SiO_2$ removal in both polished and Epi-Layer wafers; however, the etch rate and the surface roughness in the given treatment are different among the polished $2.5{\mu}m$ and $4{\mu}m$ Epi-layer wafers in spite of the identical bulk structural properties of these wafers. This study therefore suggests that independent surface treatment optimization is required for each wafer type, $2.5{\mu}m$ and $4{\mu}m$, due to the meaningful differences in the initial surface chemical and physical properties.