• 제목/요약/키워드: Si Etching

검색결과 872건 처리시간 0.031초

Large-Scale Assembly of Aligned Graphene Nanoribbons with Sub 30-nm Width

  • Kim, Taekyeong
    • 대한화학회지
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    • 제58권6호
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    • pp.524-527
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    • 2014
  • We report a simple yet efficient method to assemble large-scale aligned graphene nanoribbons (GNRs) with a width as small as 30 nm. The $V_2O_5$ nanowires (NWs) were aligned on a graphene surface via spraying a solution of the $V_2O_5$ NWs, and the graphene was selectively etched by the reactive ion etching method using the $V_2O_5$ NWs as a shadow mask. This process allowed us to prepare large scale patterns of the aligned GNRs on a $SiO_2$ substrate. The orientation of the aligned and randomly oriented GNRs was compared by the atomic force microscope (AFM) images. We achieved the highly aligned GNRs along the flow direction of the $V_2O_5$ NWs solution. Furthermore, we successfully fabricated a field effect-transistor with the aligned GNRs and measured its electrical properties. Since our method enable to prepare the aligned GNRs over a large area, it should open up new way for the various applications.

대면적 광 정보저장매체의 나노성형에 대한 기술 개발 (Nano Molding Technology for Optical Storage Media with Large-area Nano-pattern)

  • 신홍규;반준호;조기철;김헌영;김병희
    • 한국정밀공학회지
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    • 제23권4호
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    • pp.162-167
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    • 2006
  • Hot embossing lithography(HEL) has the production advantage of comparatively few process step, simple operation, a relatively low cost for embossing tools(Si), and high replication accuracy for small features. In this paper, we considered the nano-molding characteristic according to molding parameters(temperature, pressure, times, etc) and induced a optimal molding condition using HEL. High precision nano-patter master with various shapes were designed and manufactured using the DRIE(Deep Reactive ion Etching), LPCVD(Low Pressure Chemical Vapor Deposition) and thermal oxidation process, and we investigated the molding characteristic of DVD and Blu-ray nickel stamp. We induced flow behaviors of polymer, rheology by shapes and sizes of the pattern through various molding experiments. Finally, with achieving nano-structure molding with high aspect ratio, we will secure a basic technology about the molding of large-area nano-pattern media.

Formation of Neutral Beam by Low Angle Reflection

  • Lee, Do-Haing;Jung, Min-Jae;Bae, Jung-Woon;Kim, Sung-Jin;Lee, Jae-Koo;Yeom, Geun-Young
    • Journal of Korean Vacuum Science & Technology
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    • 제7권1호
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    • pp.23-26
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    • 2003
  • In this study, a neutral beam was formed using a low angle forward reflection of the ion beam and its degree of neutralization at different reflection angles was investigated. When the ion beam was reflected by a reflector at the angles lower than 15$^{\circ}$, most of the ions reflected were neutralized and the lower reflector angle showed the higher degree of neutralization. Photoresist(PR) and SiO$_2$ etchings were carried out with the neutralized oxygen and fluorine radical fluxes, respectively, and highly anisotropic etch profiles could be obtained suggesting the formation of highly directional neutral flux.

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UV-LASER INDUCED SURFACE REACTION - DESORppTION AND ETCHING

  • Murata, Yoshitada
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1992년도 제2회 학술발표회 논문개요집
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    • pp.3-10
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    • 1992
  • pphotostimulated desorpption of NO chemisorbed on ppt(001) at 80K has been studied by the (1+1)-resonance-enhanced multipphoton ionization((1+1)-REMppI) technique. A linearly ppolarized ArF excimer laser ( =193 nm, 6.41eV) is used as the ppumpp laser. A high adsorpption rate selectivity was found in the expposure deppendence of the NO desorpption yield. The NO desorpption yield increases drastically when the amount of NO expposure exceeds ~1.8 L. This result shows that the amount of NO sppecies with a large cross section for pphotostimulated desorpption increases drastically at higher NO coverages. Using scanning tunneling microscoppy, we have observed structural modifications of the chlorinated Si(111)-7$\times$7 surface induced by 266nm laser irradiation. At very low laser fluence of 0.7mJ/$\textrm{cm}^2$, at which thermal desorpption can be ignored, a pperiodic stripped ppattern of a single domain is imaged. This ppattern consists of flat terraces and narrow grooves of ~60 and ~10A in width, resppectively.

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ZnO압전박막을 이용한 FBAR에 대한 연구 (The Study of membrane structure for FBAR and the deposition of ZnO piezoelectric thin film)

  • 임석진;김종성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.358-361
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    • 2002
  • 체적파 박막형 공진기 (FBAR: Film Bulk Acoustic wave Resonator)소자를 제조하여, 박막의 c축 우선 배향성을 조절하는 것이 FBAR 소자 특성을 확인하였다. 본 연구에서는 MEMS 공정에 의해 Membrane 구조의 FBAR(Film Bulk Acoustic wave Resonator) 소자를 구현하고자 하였다. 이를 위해 Si 기판을 Back-etching 하여 membrane 구조를 제작하였고 압전층으로 ZnO을 Sputtering 공정에 의해 증착 후, 공정 조건에 따른 우선 배향성을 관찰하였다.

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Characterization of Surface Damage and Contamination of Si Using Cylindrial Magnetron Reactive Ion Etching

  • Young, Yeom-Geun
    • 한국재료학회지
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    • 제3권5호
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    • pp.482-496
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    • 1993
  • Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

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Design of a new barrier rib with low dielectric constant and thermal stability

  • Lee, Chung-Yong;Hwang, Seong-Jin;You, Young-Jin;Lee, Sang-Ho;Kim, Hyung-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.725-727
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    • 2009
  • Lowering the dielectric constant is one of the important issues for the efficiency and the power consumption in the plasma display panel (PDP) industry. This study examined the effect of the addition of ceramic filler (up to 10% of crystalline and amorphous silica, respectively) to a $B_2O_3$-ZnO- $P_2O_5$ glass matrix on the dielectric, coefficient of thermal expansion, etching behaviors and residual stress for the barrier ribs in plasma display panels. The dielectric constant of barrier ribs is affected by containing two types of $SiO_2$ filler for the barrier rib composition in PDP.

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Fully Cu-based Gate and Source/Drain Interconnections for Ultrahigh-Definition LCDs

  • Kugimiya, Toshihiro;Goto, Hiroshi;Hino, Aya;Nakai, Junichi;Yoneda, Yoichiro;Kusumoto, Eisuke
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1193-1196
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    • 2009
  • Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

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원통형 메크로기공을 갖는 다공질 실리콘과 다이어프램의 제작 (Fabrication of Cylindrical Macroporous Silicon and Diaphragms)

  • 민남기;이치우;하동식;정우식
    • 한국전기전자재료학회논문지
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    • 제11권8호
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    • pp.620-627
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    • 1998
  • For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

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투명 아크릴 레진을 이용한 초소형 PMMA 렌즈 배열의 제작 (Fabrication of refractive PMMA microlens array using transparent acrylic resin)

  • 안시홍;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 G
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    • pp.3316-3318
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    • 1999
  • PMMA(poly-methyl methacrylate) microlens array is fabricated using transparent acrylic resin. PMMA is commonly used material for plastic lens due to its excellent visibility larger than 90% and other optical characteristics so much close to those of glass. Orthodontic resin (DENTSPLY International Inc.), commonly used in dentistry, is an transparent acrylic resin kit including MMA liquid and polymerization powder. Their mixture results in PMMA through polymerization. Using the resin PMMA layer is formed on the substrate through spin-coating. Designed pattern of lens structure is transferred to PMMA layer by RIE (Reactive Ion Etching) with oxygen plasma. Final lens shape is formed by thermal treatment that causes PMMA to reflow, The thickness of PMMA spun on the substrate is $17{\mu}m$ that is also final sag of microlens, Designed diameters of the microlenses are $200{\mu}m$, $300{\mu}m$,and $500{\mu}m$, respectively.

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