• 한국재료학회지
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• 제31권3호
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• pp.156-161
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• 2021

Cr-Si based alloys are not only excellent in corrosion resistance at high temperatures, but also have good wear resistance due to the formation of Cr3Si phase, therefore they are promising as metallic coating materials. Aluminum is often added to Cr-Si alloys to improve the oxidation resistance through which stable alumina surface film is formed. On the other hand, due to the addition of aluminum, various Al-containing phases may be formed and may negatively affect the heat resistance of the Cr-Si-Al alloys, so detailed investigation is required. In this study, two Cr-Si-Al alloys (high-Si & high-Al) were prepared in the form of cast ingots through a vacuum arc melting process and the microstructural changes after high temperature heating process were investigated. In the case of the cast high-Si alloy, a considerable amount of Cr3Si phase was formed, and its hardness was significantly higher than that of the cast high-Al alloy. Also, Al-rich phases (with the high Al/Cr ratio) were not found much compared to the high-Al alloy. Meanwhile, it was observed that the amount of the Al-rich phases reduced by the annealing heat treatment for both alloys. In the case of the high temperature heating at 1,400 ℃, no significant microstructural change was observed in the high Si alloy, but a little more coarse and segregated AlCr phases were found in the high Al alloy compared to the cast state.

• 한국재료학회지
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• 제9권8호
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• pp.817-824
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• 1999

$Al_2$$O_3$-SiC 화합물 분말이 $SiO_2$, A1 그리고 C 분말들을 원료분말로 하여 SHS(self-propagating High-temperature Synthesis)법에 의해 제조되었다. 원료 분말에서의 몰비, 성형압력, 반응물의 초기온도의 영향이 생성물과 연소과정에 대해 연구되었다. $SiO_2$/A1/C계의 자전연소합성은 낮은 연소온도 때문에 $400^{\circ}C$ 이상으로 예열되어야 한다. 연소반응의 결과로서 최종생성물의 순도는 반응물의 순도보다 높았다. 이 계에서 $SiO_2$:Al:C의 적당한 몰비는 3.0:4.0:6.0이었고, free carbon은 30min 동안 $650^{\circ}C$에서 배소함으로써 제거되었다. 본 연구에서 상압소결은 $1700^{\circ}C$에서 powder bed를 사용한 표본의 분해를 제어하고 치밀한 소결체를 얻는데 매우 효과적이었다. hot-pressing으로 생성된 소결체는 이론비교밀도의 약 98%이었다.

• 한국주조공학회지
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• 제31권3호
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• pp.130-136
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• 2011

Effects of GBF (gas bubbling filtration) treatment conditions and scrap ratio on the electric conductivity of a commercial pure aluminum for diecasting were investigated using by specific gravity and electrical conductivity measurement system, hydrogen gas analyzer, XRD, and EDS. Electrical conductivities of specimen mixed Al scrap ratio until 60% from 0% were decreased with increasing the precipitates amount and size of AlFeSi ternary intermetallic compound on the grain boundary as well as amount of porosity in the grain. On the other hand, electrical conductivities was reincreased gradually in spite of scrap ratio increase from 80% to 100%. Size of AlFeSi compound formed on the grain boundary were coarsened with the increament of scrap ratios untill 80% and GBF treatment time simultaneously.

• 공업화학
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• 제34권6호
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• pp.619-625
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• 2023

본 연구는 극초음속 비행체의 열부하로 인한 문제를 해결하기 위해 촉매의 Si/Al 비 최적화 및 니켈 이온교환을 통해 탄화수소 분해반응(흡열반응)의 성능 증진에 관한 연구를 수행하였다. 4 MPa, 550 ℃ 조건에서, Si/Al 비 최적화 및 니켈 이온교환으로 제조된 촉매는 열분해 대비 흡열성능이 약 10% 개선되었음을 확인하였다. 활성 변화에 대한 영향 인자를 확인하기 위하여 FT-IR, NH₃-TPD 분석을 수행하였으며, HZSM-5 촉매의 Si/Al 비가 산점 발달 및 촉매 활성에 밀접한 상관성이 있음을 관찰하였다. 또한, 니켈이 첨가된 촉매의 탄소 침적 억제 특성을 관찰하기 위해 TGA, O₂-TPO 분석을 수행하였다.

• 한국결정성장학회지
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• 제8권2호
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• pp.332-341
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• 1998

${\alpha}-Al_2O_3$와 비정질 SiO2부터 Mullite를 합성하기 위한 고체상태반응의 반응속도를 1450~$1480^{\circ}C$ 온도 범위에서 연구하였다. 반응속도는 $Al_2O_3$분말을 코팅한 28.16wt%의 $SiO_2$와 일정한 온도에서 여러 시간동안 가열하여 생성된 혼합물에 의하여 결정되었다. MgO안의 반응물과 미반응물의 양은 X-선 회절분석에 의하여 결정되었다. Mullite의 부피율과 peak intensity 비의 자료로부터 $Al_2O_3$와 $SiO_2$의 $3Al_2O_3\;{\cdot}\;2SiO_2$형태로의 반응은 $1450^{\circ}C$와 $1480^{\circ}C$ 사이에서 시작되었다. 고체상태반응 활성화 에너지는 Arrhenius 식에 의하여 결정되었다. 활성화 에너지는 31.9KJ/mol이다.

• 한국분말재료학회지
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• 제1권2호
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• pp.159-166
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• 1994

The variation of the microstructures and the mechanical properties with varying vacuum hot pressing temperature and pressure was investigated in PyM processed 20 vol%) SiCw/ 2124Al composites. As increasing the vacuum hot pressing temperature, the aspect ratio of whiskers and density of composites increased due to the softening of 2124Al matrix with the increased amount of liquid phase. The tensile strength of composite increased with increasing vacuum hot pressing temperature up to $570^{\circ}C$ and became saturated above $570^{\circ}C$, To attain the high densification of composites above 99%, the vacuum hot pressing pressure was needed to be above 70 MPa. However, the higher vacuum hot pressing pressure above 70 MPa was not effective to increase the tensile strength due to the reduced aspect ratio of SiC whiskers from damage of whiskers during vacuum hot pressing. A phenomenological equation to predict the tensile strength of $SiC_w$/2124AI composite was proposed as a function including two microstructural parameters, i.e. density of composites and aspect ratio of whiskers. The tensile strength of $SiC_w$/2124AI were found more sensitive to the porosity than other P/M materials due to the higher stress concentration and reduced load transfer efficiency by the pores locating at whisker/matrix interfaces.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• 한국주조공학회지
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• 제20권3호
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• pp.197-207
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• 2000

Al-Si alloys were solidified in a rotating cylindrical mold by a vertical centrifugal casting process. Under a certain casting condition, there are four distinct zones such as the chill zone, the primary fine columnar zone, the equiaxed zone, and the secondary coarse columnar zone from the mold wall. The columnar-equiaxed transition (CET) and the equiaxed-columnar transition (ECT) were measured as functions of solute content, flow rate (mold velocity), pouring temperature and mold temperature. Within the critical value of solute content, as the flow rate increases, the columnar-equiaxed transition were found, but not the equiaxed-columnar transition. The aspect ratio of the primary columnar zone was more affected by the solute content than the flow rate. However the aspect ratio of the equiaxed zone was more affected by the flow rate than the solute content. The aspect ratio of the secondary columnar zone was affected by both the flow rate and the solute content.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2016년도 춘계 학술논문 발표대회
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• pp.51-52
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• 2016

This paper researches the Chloride Binding of Cement Paste according to the Ca/Si and Ca/Al Ratio. The mechanisms of chloride ion binding are not completely known, although it is believed that Alumina contents in cementitious system have an important role. For changing cement paste composition, Ordinary Portland Cement(OPC) paste is substituted by Granulated Ground Blast Slag(GGBS). With increasing the ratio of GGBS substitution(Thus alumina contents is increasing), The chloride binding capacity has a tendency to increase of binding chloride ion capacity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.