• Korean Journal of Mineralogy and Petrology
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• 제36권4호
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• pp.273-288
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• 2023

The Gubong Au-Ag deposit, which has been one of the largest deposits (Unsan, Daeyudong, Kwangyang) in Korea, consists of eight lens-shaped quartz veins (a mix of orogenic-type and intrusion-related types) that filled fractures along fault zones within Precambrian metasedimentary rock. Korea Mining Promotion Corporation found a quartz vein (referred to as the No. 6 vein with a grade of 27.9 g/t Au and a width of 0.9 m) at a depth of -728 ML by drilling (No. 90-12) conducted in 1989. Korea Mining Promotion Corporation conducted drilling (No. 04-1) in 2004 to investigate the redevelopment's possibility of the No. 6 vein. The author studied the occurrence and chemical composition of chlorite and white mica using wallrock, wallrock alteration and quartz vein samples collected from the No. 04-1 drilling core in 2004. The alteration of studied samples occurs chloritization, sericitization, silicification and pyritization. Chlorite and white mica from mineralized zone at a depth of -275 ML occur with quartz, K-feldspar, calcite, rutile and pyrite in wallrock alteration zone and quartz vein. Chlorite and white mica from ore vein (No. 6 vein) at a depth of -779 ML occur with quartz, calcite, apatite, zircon, rutile, ilmenite, pyrrhotite and pyrite in wallrock alteration zone and quartz vein. Chlorite from a depth of -779 ML has a higher content of Al and Mg elements and a lower content of Si and Fe elements than chlorite from a depth of -275 ML. Also, Chlorites from a depth of -275 ML and -779 ML have higher content of Si element than theoretical chlorite. Compositional variation in chlorite from a depth of -275 ML was mainly caused by phengitic or Tschermark substitution [Al^{3+,VI + Al3+,IV} <-> (Fe²⁺ or Mg²⁺)^VI + (Si⁴⁺)^IV], but compositional variation from a depth of -779 ML was mainly caused by octahedral Fe²⁺ <-> Mg²⁺ (Mn²⁺) substitution. The interlayer cation site occupancy (K+Na+Ca+Ba+Sr = 0.76~0.82 apfu, 0.72~0.91 apfu) of white mica from a depth of -275 ML and -779 ML have lower contents than theoretical dioctahedral micas, but octahedral site occupancy (Fe+Mg+Mn+Ti+Cr+V+Ni = 2.09~2.13 apfu, 2.06~2.14 apfu) have higher contents than theoretical dioctahedral micas. Compositional variation in white mica from a depth of -275 ML was caused by phengitic or Tschermark substitution [(Al³⁺)^VI + (Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI + (Si⁴⁺)^IV], illitic substitution and direct (Fe³⁺)^VI <-> (Al³⁺)^VI substitution. But, compositional variation in white mica from a depth of -779 ML was caused by phengitic or Tschermark substitution [(Al³⁺)^VI + (Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI + (Si⁴⁺)^IV] and direct (Fe³⁺)^VI <-> (Al³⁺)^VI substitution.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.128.2-128.2
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• 2011

스테인레스 스틸 유연기판 위에 플라즈마 화학기상 증착법 (plasma enhanced chemical vapor deposition)을 이용하여 nip 구조의 미세결정질 실리콘 박막 태양전지 (microcrystalline silicon thin film solar cell)를 제조하고 i ${\mu}c$-Si:H광 흡수층과 p ${\mu}c$-Si:H 사이에 i a-Si:H 버퍼 층을 삽입하여 i/p 계면특성을 개선하고 이에 따른 태양전지 성능특성 변화를 조사하였다. ${\mu}c$-Si:H 박막으로 이루어진 i/p 계면에서의 구조적, 전기적 결함은 태양전지 내에서 생성된 캐리어의 재결합과 shunt resistance 감소를 초래하여 개방전압 (open circuit voltage) 및 곡선 인자 (fill factor)를 감소시키는 것으로 알려졌다. 제조된 미세결정질 실리콘 박막 태양전지는 SUS/Ag/ZnO:Al/n ${\mu}c$-Si:H/i ${\mu}c$-Si:H/p ${\mu}c$-Si:H 구조로 제작되었으며 i/p 계면 사이의 i a-Si;H 버퍼층 두께를 변화시키고 이에 따른 태양전지의 특성을 조사하였다. 태양전지의 구조적, 전기적 특성 변화는 Scanning Electron Microscope (SEM), UV-visible-nIR spectrometry, Photo IV와 Dark IV를 통하여 조사하였다.

• Resources Recycling
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• 제31권3호
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• pp.73-80
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• 2022

Reduction smelting of spent lithium-ion batteries at high temperature produces metallic alloys. Following solvent extraction of the leaching solutions of these metallic alloys with either sulfuric or hydrochloric acid, the raffinate is found to contain Ni(II), Co(II), Mn(II), and Si(IV). In this study, two cationic exchange resins (Diphonix and P204) were employed to investigate the loading behavior of these ions from synthetic sulfate and chloride solutions. Experimental results showed that Ni(II), Co(II), and Mn(II) could be selectively loaded onto the Diphonix resin from a sulfate solution of pH 3.0. With a chloride solution of pH 6.0, Mn(II) was selectively loaded onto the P204 resin, leaving Ni(II) and Si(IV) in the effluent. Elution experiments with H₂SO₄ and/or HCl resulted in the complete recovery of metal ions from the loaded resin.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.510-513
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• 2003

Our Zn diffusion into n-type $GaAs_{0.40}P_{0.60}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.303.2-303.2
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• 2014

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

• Bulletin of the Korean Chemical Society
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• 제19권9호
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• pp.927-933
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• 1998

Polycrystalline powder of vanadium-doped forsterite (Vδ $Mg_2SiO_4$) was synthesized by the $H_2O_2$-assisted sol-gel method. The vanadium dopant, which was added as VO$(OMe)_3$ in methanol, went through several redox reactions as the sol-gel reaction proceeded. Upon adding VO$(OMe)_3$ to a mixture of $Mg(OMe)_2$ and Si$(OEt)_4$ in methanol, V(V) reduced to V(IV). As hydrolysis reaction proceeded, the V(IV) oxidized all back to V(V). Apparently, some of the V(V) reduced to V(IV) during subsequent gelation by condensation reaction. The V(IV) remained even after heat treatment of the gel in highly oxidizing atmosphere. The crystallization of the xerogel around 880 ℃ readily produced single phase forsterite without any minor phase. Using the polycrystalline powder as feeding stock, single crystals of vanadium-doped forsterite were grown by the floating zone method in oxidizing or reducing atmosphere. The doping was limited in low level because of the high partitioning of the vanadium in liquid phase during melting. The greenish single crystal absorbed visible light of 700∼1100 nm. But, no emission was obtained in near infrared range.

• The Bulletin of The Korean Astronomical Society
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• 제35권1호
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• pp.68.1-68.1
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• 2010

We focus on two Galactic molecular clouds that are located in wholly different environments and both are observed by FIMS instrument onboard STSAT-1. The Draco cloud is known as a translucent molecular cloud at high Galactic latitude. The FUV spectra show important ionic lines of C IV, Si IV+O IV], Si II* and Al II, indicating the existence of hot and warm interstellar gases in the region. The enhanced C IV emission inside the Draco cloud region is attributable to the turbulent mixing of the interacting cold and warm/hot media, which is supported by the detection of the O III] emission line and the $H{\alpha}$ feature in this region. The Si II* emission covers the remainder of the region outside the Draco cloud, in agreement with previous observations of Galactic halos. Additionally, the H2 fluorescent map is consistent with the morphology of the atomic neutral hydrogen and dust emission of the Draco cloud. In the Aquila Rift region near Galactic plane, FIMS observed that the FUV continuum emission from the core of the Aquila Rift suffers heavy dust extinction. The entire field is divided into three sub-regions that are known as the- "halo," "diffuse," and "star-forming" regions. The "diffuse" and "star-forming" regions show various prominent H2 fluorescent emission lines, while the "halo" region indicates the general ubiquitous characteristics of H2. The CLOUD model and the FUV line ratio are included here to investigate the physical conditions of each sub-region. Finally, the development of an infrared imaging system known as the MIRIS instrument onboard STSAT-3 is briefly introduced. It can be used in WIM studies through $Pa{\alpha}$ observations.

• Water for future
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• 제31권4호
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• pp.78-88
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• 1998

• Nuclear Engineering and Technology
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• 제56권3호
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• pp.812-818
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• 2024

The volume and toxicity of radioactive waste can be decreased by separating the components of high-level liquid waste according to their properties. An impregnated silica-based adsorbent was prepared in this study by combining N,N,N',N',N",N"-hexa-n-octylnitrilotriacetamide (HONTA) extractant, N',N'-di-n-hexyl-thiodiglycolamide (Crea) extractant, and macroporous silica polymer composite particles (SiO₂-P). The performance of platinum-group metals adsorption and separation on prepared (HONTA + Crea)/SiO₂-P adsorbent was then assessed together with that of co-existing metal ions by batch-adsorption and chromatographic separation studies. From the batch-adsorption experiment results, (HONTA + Crea)/SiO₂-P adsorbent showed high adsorption performance of Pd(II) owing to an affinity between Pd(II) and Crea extractant based on the Hard and Soft Acids and Bases theory. Additionally, significant adsorption performance was observed toward Zr(IV) and Mo(VI). Compared with studies using the Crea extractant, the high adsorption performance of Zr(IV) and Mo(VI) is attributed to the HONTA extractant. As revealed from the chromatographic experiment results, most of Pd(II) was recovered from the feed solution using 0.2 M thiourea in 0.1 M HNO₃. Additionally, the possibility of recovery of Zr(IV), Mo(VI), and Re(VII) was observed using the (HONTA + Crea)/SiO₂-P adsorbent.