• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.441-447
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• 1995

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.225-235
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• 1995

To investigate the effects of pretreatment and substrate bias on the characteristics of the diamond thin films, the thin films were deposited on the p-type Si(100) wafer by MPECVD using mixtures of $H_2$, $CH_4$, and $O_2$ gases. Deposition was carried out at the substrate temperature of $900^{\circ}C$ and at the pressure of 40torr. The effect of the pretreatment on the film formation was the examined by using SiC and diamond powders as abrasive powders. Furthermore, the substrate bias effect on the formation of the diamond film was also examined. The highest nucleation density was observed for the pretreatment with 40~60$\mu\textrm{m}$ size of diamond powders and a negative bias potential(-50V). Many defects and(111) twins in the diamond films were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.33-38
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• 2002

For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).

• Journal of Magnetics
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• v.6 no.3
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• pp.90-93
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• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.7-11
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• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.