• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.117-117
• /
• 2009

최근 고집적화 구조는 저항(resistance)과 정전용량 (capacitance)에 의한 신호 지연 (RC delay) 증가로 인한 혼선 (cross-talk noise)과 전력소모 (power dissipation)등의 문제를 발생시킨다. 칩 성능에 영향을 미치는 제한인자를 최소화하기 위해서는 저저항 배선 금속과 저유전상수 (low-k)의 층간 절연막 (IMD, intermetal dielectric) 물질이 필요하다. 최근 PECVD (plasma enhanced chemical vapor deposition)를 이용하여 증착시킨 유기살리케이트 (OSG, organosilicate glass)는 가장 유망한 저유전상수 물질로 각광받고 있다. 본 연구에서는 제일원리 연구를 통하여 OSG의 전구체 중에 하나인 DEMS 문자를 모델링하고, 에너지적으로 가장 안정한 구조를 찾아서 각 원자 간의 결합에 따른 해리에너지 (dissociation energy)를 계산하고, DEMS가 H-terminated Si 표면과 반응하는 기구에 대해 고찰하였다. 최적화된 DEMS 분자의 구조를 찾았고 DEMS 분자가 결합이 깨져 조각 분자군으로 될 때의 에너지들을 계산하였다. 계산된 해리에너지로부터 DEMS 분자의 O 원자와 C분자의 결합이 깨져서 $C_2H_5$를 조각 분자군으로 생성할 확률이 총 8가지의 경우에서 가장 높다는 것을 알 수 있었다. 8 가지의 해리된 DEMS 조각 분자군들이 H-terminated Si 표면과 반응할 때의 반응에너지를 계산한 결과 표면의 Si 원자와 DEMS 분자에서 $C_2H_5$가 해리되어 생성된 조각 분자군의 O 원자가 결합을 하고 부산물로 $C_2H_6$를 생성하는 반응이 가장 선호된다는 것을 알 수 있었다. DEMS 분자로 증착시킨 OSG에 대하여 제일원리법을 이용하여 계산한 연구는 보고된 바 없기 때문에, DEMS 분자의 각 원자 간의 해리에너지와 Si 기판과의 반응에너지는 추후 연구개발의 중요한 기초 자료가 될 수 있다.

• Nutrition Research and Practice
• /
• 제12권3호
• /
• pp.222-232
• /
• 2018

BACKGROUND/OBJECTIVES: Since gain or loss of skeletal muscle mass is a gradual event and occurs due to a combination of lifestyle factors, assessment of dietary factors related to skeletal muscle is complicated. The aim of this study was to investigate the changes in total energy intake according to the level of skeletal muscle mass. SUBJECTS/METHODS: A total of 8,165 subjects ${\geq}30years$ of age from the Korean National Health and Nutrition Examination Surveys (KNHANES) 2008-2011 were included in the analysis, and multivariate-adjusted regression analyses were performed to analyze the association of the quartiles of sarcopenia index (SI) with energy intake of the study population after adjusting for age and metabolic parameters. RESULTS: The increase in SI quartile was in proportion to the gradual decrease in systemic lipids and the anthropometric measurement of fat accumulation (P < 0.001). Subjects in higher SI quartiles tended to consume more total energy and energy-producing nutrients than those in lower quartiles (P < 0.001). After age, body weight, alcohol consumption, and metabolic parameters were adjusted in the analysis, total energy intake gradually increased according to the increase in SI quartile, and the association between total energy intake and SI was more pronounced in men. However, the risk (odd ratio) of having a low SI was not affected by any single macronutrient intake. CONCLUSION: In this study, total energy intake was positively associated with SI and relative skeletal mass in both men and women. However, no significant association or a weak association was observed between any single macronutrient intake and skeletal muscle mass. The data indicated that acquiring more energy intake within the normal range of energy consumption may help to maintain skeletal muscle mass.

• 한국전기전자재료학회논문지
• /
• 제11권3호
• /
• pp.181-187
• /
• 1998

The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

• 한국전기전자재료학회논문지
• /
• 제16권1호
• /
• pp.1-4
• /
• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.109-110
• /
• 2008

We have performed a density functional theory study to investigate the reaction of the $HfCl_4$ molecule on $H_2O$ terminated Si (001)-$(2\times1)$ surface. The reaction of the $HfCl_4$ molecule is more favorable on OH-terminated site than H-terminated site. The first $HfCl_4$ molecule is adsorbed on a OH-terminated site with 0.21 eV energy benefit. The second $HfCl_4$ molecule is adsorbed on the most adjacent OH-terminated site of the first molecule and the energy benefit is 0.28 eV. The third and forth molecules have same tendency with the first and second ones. The adsorption energies of the fifth and sixth $HfCl_4$ molecules are 0.01 eV, -0.06 eV respectively. Therefore, we find that the saturation Hf coverage is approximately 5/8 of the available hydroxyl site, which is $2.08\times10^{14}/cm^2$. Our model is well matched with an experimental study by reference.

• 기본간호학회지
• /
• 제20권4호
• /
• pp.419-428
• /
• 2013

Purpose: This study was done to explore the level of life stress, depression, and suicidal ideation and to identify the associated factors of suicidal ideation (SI) among college nursing students. Method: The design of this study was a descriptive survey design using a convenience sampling. Data collection was done using self-questionnaire from 124 students in 2 universities located in Gyeonggi and Chungnam provinces. The collected data were analyzed using descriptive statistics, ANOVA, t-test, Pearson correlation coefficients, and hierarchical multiple regression. Results: Study participants reported low level of SI, depression, and life stress ($44.45{\pm}19.21$, $8.40{\pm}5.94$, $40.65{\pm}32.17$). The 53% of variance in SI was significantly explained by life stress related value (${\beta}=.41$, p<.001), life stress related to interpersonal relationship with family (${\beta}=.19$, p=.014), life stress related to interpersonal relationship with friends (${\beta}=.34$, p<.001), and depression (${\beta}=.36$, p<.001). Conclusions: The results indicate that to decrease the SI in these students, an active interest in the students is needed to lower stress levels in interpersonal relationships with family and friends, in life stress related to value, and for relief of depression. Suicide prevention programs specific to the level of life stress and depression need to be developed for nursing students.

• 반도체디스플레이기술학회지
• /
• 제8권2호
• /
• pp.55-58
• /
• 2009

Density functional theory was used to investigate the adsorption and reaction of $HfCl_4$ with two hydroxyls on Si (001)-$2{\times}1$ surface in atomic layer deposition (ALD) process. We prepared a reasonable Si substrate which consisted of six inter-dimer dissociated $H_2O$ molecules and two intra-dimer dissociated $H_2O$ molecules. The $HfCl_4$must react with two hydroxyls to be a bulk-like structure. When $HfCl_4$ was adsorbed on a hydroxyl, there was energy benefit of -0.55 eV. Though there was energy loss for $HfCl_4$ to react with H of hydroxyl, thermal energy of ALD chamber would be enough to pass the energy barriers. There were five reaction pathways for $HfCl_4$ to react with two hydroxyls; inter-dimer, intra-dimer, cross-dimer, inter-row, and cross-row. Inter-row, inter-dimer and intra-dimer were relatively favorable among the five reaction pathways based on the energy difference. The electron densities between O and Hf in these three reactions were higher than the others and they had shorter Hf-O and O-O bond lengths than the other two reaction pathways.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2007년도 제32회 학술대회 초록집
• /
• pp.76-76
• /
• 2007

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2007년도 제32회 학술대회 초록집
• /
• pp.68-68
• /
• 2007

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2005년도 제28회 학술발표회 초록집
• /
• pp.62-62
• /
• 2005